Investigation of the Defect Size and Density in Thin SiON Filmfor Organic Device Encapsulation

2016 ◽  
Vol 2016 (1) ◽  
pp. 000272-000276
Author(s):  
Kunmo Chu ◽  
Ki Deok Bae ◽  
Byong Gwon Song ◽  
Yong Young Park ◽  
Jaekwan Kim ◽  
...  
Keyword(s):  
Defect Density ◽  
Chemical Vapor ◽  
Defect Size ◽  
Intrinsic Defect ◽  
Ni Substrate ◽  
Defect Site ◽  
Defect Sites ◽  
Chemical Vapor Deposited ◽  
Density Values ◽  
Defect Densities

Abstract In this study, thin SiON was grown by plasma enhanced chemical vapor deposited (PECVD) method as a thin-film encapsulation (TFE) layer. For defect visualization, electroplating results in a Cu bump grown at each defect site in the SiON film where electrolytic solution establishes contact with the Ni substrate. It was inferred that the Cu bump density could be representative of the intrinsic defect densities for the SiON film. The defect density values were obtained by monitoring the Cu bumps grown at defect sites in the SiON films and then evaluating the number of densities of the Cu bumps for the corresponding defect densities.At the same time, by analyzing the cross section of the Cu bumps grown on SiON film, a linear relation between the Cu bump diameter and the defect size increase was obtained. We expect that this electroplating method allows for rapid visualization of defect distribution and quality evaluation of TFE layers.

Defect Reduction of Cvd-Grown Cubic SiC Epitaxial Films on Off-Axis Si(100) Substrates with a Novel Off-Direction.

1990 ◽  
Vol 198 ◽  
Author(s):  
Katsuki Furukawa ◽  
Yoshihisa Fujii ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Defect Density ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Defect Reduction ◽  
Fault Density ◽  
Electrolytic Etching ◽  
Order Of Magnitude ◽  
First Time ◽  
Defect Densities ◽  
Sic Films

ABSTRACTMonocrystalline cubic SiC (β -SiC) thin films with lower defect densities have been epitaxially grown by chemical vapor deposition on off-axis Si (100) substrates with off-directions different from the conventional 〈011〉. Stacking faults of β -SiC films are investigated by the electrolytic etching and SEM observation. The effects of off-direction deviated from 〈011〉 are examined for the first time. The off-angle is fixed at 2 degrees. We find a reduction in defect density with increasing deviation angle θ, of off-direction from [011] toward [011[ (θ = 0 - 45°). The defect density becomes one order of magnitude smaller than that of on-axis (100) substrates. A typical value of the stacking fault density is approximately 6 × 106 cm−2 on the substrate with θ = 30° (film thickness: 24μ m).

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

scholarly journals Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Xibiao Ren ◽  
Jichen Dong ◽  
Peng Yang ◽  
Jidong Li ◽  
Guangyuan Lu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Grain Boundaries ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited
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