Development of Printed Power Packaging for a High Voltage SiC Module

2012 ◽  
Vol 2012 (1) ◽  
pp. 000955-000960
Author(s):  
Haotao KE ◽  
Douglas C Hopkins
Keyword(s):  
High Voltage ◽  
Internal Resistance ◽  
Electronic Energy ◽  
Electronic Systems ◽  
Power Module ◽  
Printable Electronics ◽  
Current Densities ◽  
Circuit Techniques ◽  
Silicon Power Devices ◽  
Printing Techniques

Due to rapidly developing post silicon power devices, in particular SiC and GaN, three primary parameters in power packaging: temperature, voltage and current, are much more difficult to manage. The SiC devices are being developed for high voltage (>15kV). The GaN devices will have extremely low internal resistance, operate at extreme current densities (≫10A/mm2), and can account for <50% of the resistance in a power module. Both devices can operate at high temperatures (>300°C) and >10-times frequency compared to Si. The traditional power electronics packaging approaches need augmentation or replacement. Most technologies used in packaging of power electronic systems, or more generally Electronic Energy Systems, are ported from microelectronics. The recent development of printable 3D circuit techniques, e.g. jetting and dispensing, provide additional major approaches applicable to power packaging. Some printing techniques are already applied to solar cells and batteries. This paper explores the printable electronics technologies for application to power.

Original design of field grading materials for high voltage power module applications

2020 ◽  
Author(s):  
Trong Trung Le ◽  
Zarel Valdez-Nava ◽  
Guillaume Belijar ◽  
Sombel Diaham ◽  
Lionel Laudebat ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Module ◽  
Original Design

Space High Voltage Power Module Design

2020 ◽  
Author(s):  
Zhao Wen-jie ◽  
Wan Cheng-an ◽  
Gao Yi-fei ◽  
Zhang Guo-shuai ◽  
Zheng Yan ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Module ◽  
Module Design

Numerical Thermal Simulation of Cryogenic Power Modules Under Liquid Nitrogen Cooling

2005 ◽  
Vol 128 (3) ◽  
pp. 267-272 ◽  
Author(s):  
Hua Ye ◽  
Harry Efstathiadis ◽  
Pradeep Haldar
Keyword(s):  
Liquid Nitrogen ◽  
Electrical Current ◽  
Oxide Semiconductor ◽  
Junction Temperature ◽  
Electronic Systems ◽  
Power Module ◽  
Power Modules ◽  
Allowable Range ◽  
Liquid Nitrogen Cooling ◽  
Thermal Simulations

Understanding the thermal performance of power modules under liquid nitrogen cooling is important for the design of cryogenic power electronic systems. When the power device is conducting electrical current, heat is generated due to Joule heating. The heat needs to be efficiently dissipated to the ambient in order to keep the temperature of the device within the allowable range; on the other hand, it would be advantageous to boost the current levels in the power devices to the highest possible level. Projecting the junction temperature of the power module during cryogenic operation is a crucial step in designing the system. In this paper, we present the thermal simulations of two different types of power metal-oxide semiconductor field effect transistor modules used to build a cryogenic inverter under liquid nitrogen pool cooling and discussed their implications on the design of the system.

Modeling and Design of High Temperature Silicon Carbide DMOSFET Based Medium Power DC-DC Converter

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000144-000151
Author(s):  
Siddharth Potbhare ◽  
Akin Akturk ◽  
Neil Goldsman ◽  
James M. McGarrity ◽  
Anant Agarwal
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Efficiency ◽  
Schottky Diodes ◽  
Power Converter ◽  
Electronic Systems ◽  
High Temperature Electronics ◽  
New Material ◽  
Silicon Power Devices ◽  
Relationship Of

Silicon Carbide (SiC) is a promising new material for high power high temperature electronics applications. SiC Schottky diodes are already finding wide acceptance in designing high efficiency power electronic systems. We present TCAD and Verilog-A based modeling of SiC DMOSFET, and the design and analysis of a medium power DC-DC converter designed using SiC power DMOSFETs and SiC Schottky diodes. The system is designed as a 300W boost converter with a 12V input and 24V/36V outputs. The SiC power converter is compared to another designed with commercially available Silicon power devices to evaluate power dissipation in the DMOSFETs, transient response of the system and its conversion efficiency. SiC DMOSFETs are characterized at high temperature by developing temperature dependent TCAD and Verilog-A models for the device. Detailed TCAD modeling allows probing inside the device for understanding the physical processes of transport, whereas Verilog-A modeling allows us to define the complex relationship of interface traps and surface physics that is typical to SiC DMOSFETs in a compact analytical format that is suitable for inclusion in commercially available circuit simulators.

A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode

2015 ◽  
Vol 2015 (1) ◽  
pp. 000359-000364 ◽  
Author(s):  
Adam Morgan ◽  
Ankan De ◽  
Haotao Ke ◽  
Xin Zhao ◽  
Kasunaidu Vechalapu ◽  
...  
Keyword(s):  
High Voltage ◽  
Thermal Stresses ◽  
Wide Bandgap ◽  
Power Module ◽  
Cost Performance ◽  
Power Semiconductor ◽  
Current Switch ◽  
Power Modules ◽  
Voltage Stress ◽  
3D Printed

The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.

Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions

2020 ◽  
Vol 1004 ◽  
pp. 464-471
Author(s):  
Sarah Rugen ◽  
Siddarth Sundaresan ◽  
Ranbir Singh ◽  
Nando Kaminski
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Current Density ◽  
High Power ◽  
Stacking Faults ◽  
Bipolar Junction Transistors ◽  
Mode Operation ◽  
Different Temperatures ◽  
Current Densities ◽  
The Impact

Bipolar silicon carbide devices are attractive for high power applications offering high voltage devices with low on-state voltages due to plasma flooding. Unfortunately, these devices suffer from bipolar degradation, which causes a significant degradation of the on-state voltage. To explore the generation of stacking faults, which cause the degradation, the impact of the current density and temperature on bipolar degradation is investigated in this work. The analysis is done by stressing the base-collector diode of 1.2 kV bipolar junction transistors (BJTs) as well as the BJTs in common-emitter mode operation with different current densities at different temperatures.

scholarly journals The Use of Parameter-Free Correlation Functions in Green's Function Monte Carlo Simulations of Small Electronic Systems

1997 ◽  
Vol 52 (11) ◽  
pp. 793-802 ◽  
Author(s):  
C. Mecke ◽  
F. F. Seelig
Keyword(s):  
Monte Carlo ◽  
Green’S Function ◽  
Green's Function ◽  
Correlation Functions ◽  
High Performance ◽  
Limited Range ◽  
Electronic Energy ◽  
Simple Expression ◽  
Electronic Systems ◽  
Green's Function Monte Carlo

Abstract Using an old formulation for correlation functions with correct cusp-behaviour, the Schrödinger equation transforms to a new differential equation which provides a very simple expression for the local electronic energy with limited range. This, together with the simplicity of the formulation promises a high performance in Green's function Monte Carlo (GFMC) simulations of small electronic systems. The behaviour of the local energy is studied on a few simple examples because the variance of this function determines the quality of the results in the GFMC methods. Calculations for one-and two-electron systems are presented and compared with results from well-known functions. The form of the function is then extended to systems with more than two electrons. Results for the Be atom are given and the extension to larger electronic systems is discussed.

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