scholarly journals GaN Power Module with High Temperature Gate Driver and Insulated Power Supply

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000198-000205 ◽  
Author(s):  
Rémi Perrin ◽  
Dominique Bergogne ◽  
Christian Martin ◽  
Bruno Allard
Keyword(s):  
High Temperature ◽  
Internal Combustion Engines ◽  
High Efficiency ◽  
Input Voltage ◽  
Power Module ◽  
Switching Speed ◽  
Switching Losses ◽  
Power Switches ◽  
Gate Driver ◽  
Embedded Power

Emerging GaN power switches show advantages for integration in power modules at high temperature and/or high efficiency. These modules are good candidates for embedded power converters in harsh environment such as three phase inverters for Electro-Mechanical Actuators (EMA) in the vicinity of internal combustion engines. The power range is usually within 1 to 5 kW, extending sometimes up to 50 kW, using a high voltage DC bus (HVDC) that is usually comprised between 200 V and 600 V. For aeronautical applications, GaN power switches could challenge SiC transistors for their high switching speed, hence reduced switching losses, therefore lower embarked mass. For automotive applications, it is the relative promise for lower cost per Amp that is pushing this technology up. This is why a project joining GaN device conception, power module development and gate driver optimization using high temperature technologies was set-up. This paper presents the first practical results: a functional GaN power inverter-leg driven by a specific high temperature gate driver with signal and power insulation. This building block requires an auxiliary DC supply with a input voltage of 14 V or 28 V and an external PWM control signal. Current rating is 20 A and breakdown voltage is 200 V.

Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module

2017 ◽  
Vol 2017 (1) ◽  
pp. 000247-000251
Author(s):  
Liqi Zhang ◽  
Suxuan Guo ◽  
Pengkun Liu ◽  
Alex Q. Huang
Keyword(s):  
Comparative Evaluation ◽  
Switching Frequency ◽  
Common Source ◽  
Power Module ◽  
Switching Speed ◽  
Switching Performance ◽  
Switching Losses ◽  
Power Modules ◽  
Gate Driver ◽  
The Common

Abstract SiC MOSFET-gate driver integrated power module is proposed to provide ultra-low stray inductance compared to traditional TO-247 or TO-220 packages. Kelvin connection eliminates the common source stray inductance and zero external gate resistor enables faster switching. This module can be operated at MHz switching frequency for high power applications with lower switching losses than discrete packages. Two different gate drivers and two different SiC MOSFETs are grouped and integrated into three integrated power modules. Comparative evaluation and analysis of gate driver impacts on switching speed of SiC MOSFET is shown in detail. The paper provides an insight of the gate driver impacts on the device switching performance in an integrated power module.

Low Switching Energy 1200V Normally-Off SiC VJFET Power Modules

2011 ◽  
Vol 679-680 ◽  
pp. 583-586 ◽  
Author(s):  
David C. Sheridan ◽  
Andrew Ritenour ◽  
Volodymyr Bondarenko ◽  
Jeff B. Casady ◽  
Robin L. Kelley
Keyword(s):  
High Frequency ◽  
High Efficiency ◽  
Bridge Circuit ◽  
Schottky Diodes ◽  
Power Module ◽  
Enhancement Mode ◽  
Switching Losses ◽  
Power Modules ◽  
Standard Module ◽  
Gate Driver

This work presents the progress in developing an all SiC based power module for use in high frequency and high efficiency applications. Using parallel combinations of 1200V enhancement mode SiC VJFETs (36mm2) and Schottky diodes (23mm2), a total on-resistance of only 10mOhm (2.7m-cm2) was achieved at ID=100A in a commercially available standard module configured as a half-bridge circuit. Careful attention to module layout, gate driver design, and the addition of optimized snubbers resulted in excellent switching waveforms with low total switching losses of 1.25mJ when switching 100A at 150oC.

scholarly journals ZVS Full–Bridge Based DC–DC Converter with Linear Voltage Gain According to Duty Cycle

2013 ◽  
Vol 64 (5) ◽  
pp. 331-333
Author(s):  
Hyun-Lark Do
Keyword(s):  
Duty Cycle ◽  
Pulse Width Modulation ◽  
High Efficiency ◽  
Input Voltage ◽  
Voltage Gain ◽  
Voltage Range ◽  
Zero Voltage Switching ◽  
Switching Losses ◽  
Power Switches ◽  
Linear Voltage

Abstract This paper presents a zero-voltage-switching (ZVS) full-bridge based DC-DC converter with linear voltage gain according to duty cycle. The proposed converter is based on an asymmetrical pulse-width-modulation (APWM) full-bridge converter which has various advantages over other converters. However, it has some drawbacks such as limited maximum duty cycle to 0.5 and narrow input range. The proposed converter overcomes these problems. The duty cycle is not limited and input voltage range is wide. Also, the ZVS operation of all power switches is achieved. Therefore, switching losses are significantly reduced and high-efficiency is obtained. Steady-state analysis and experimental results for the proposed converter are presented to validate the feasibility and the performance of the proposed converter.

Down-hole switching-mode power supply using a remote CA start up pulse

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000180-000183
Author(s):  
Rito Mijarez ◽  
Angel Gomez ◽  
David Pascacio ◽  
Ivan Martinez ◽  
Ricardo Guevara
Keyword(s):  
High Temperature ◽  
Power Supply ◽  
Oil And Gas ◽  
High Efficiency ◽  
Input Voltage ◽  
Total Power ◽  
Start Up ◽  
Power Switches ◽  
Switching Mode ◽  
Efficient Power

Abstract The hydrocarbon industry leans heavily upon advanced technologies to extract oil and gas from greater depths and in harsher environments. The challenge to electronics manufacturers and designers is to make complex electronics work at the high temperatures, vibration, and extreme pressures encountered in these locations. Among the more critical electronic systems required for high temperature down-hole operations is high efficiency switching mode power supplies (SMPS). The use of high frequency switching permits not only decreasing the size of inductors and capacitors in the circuit design, but also obtaining typical power efficiencies up to 90%. Generally a SMPS is composed of a controller, a converter and silicon carbide (SiC) power switches. High temperature down-hole gauges operate with low voltages either 3.3V or 5.0V; however, wire-line surface power equipment utilizes higher voltages above 250 V CD. Hence, SMPS requires efficient power dissipation circuits to reduce the DC input voltage. This work describes a high temperature SMPS that has a DC input range from 150 V CD to 300 V CD, ± 6 V CD output voltages and 12 W total power. The SMPS design uses a CA start up pulse provided by a programmable surface power supply via a mono-conductor wire-line cable; subsequently, the SMPS sustains its operation by powering itself using one of the voltage outputs. The obtained laboratory tests results of the down-hole SMPS, using changes in temperature from 25 °C – 200 °C, provide a firm basis for testing and evaluating the DC-CD power supply in high temperature gauges in the field.

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

scholarly journals A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION

2011 ◽  
Vol 20 (03) ◽  
pp. 471-484 ◽  
Author(s):  
LIANG ZUO ◽  
ROBERT GREENWELL ◽  
SYED K. ISLAM ◽  
M. A. HUQUE ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Low Cost ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Successful Operation ◽  
Power Switches ◽  
Gate Driver

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost high-temperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron silicon-on-insulator (SOI) high-voltage process. The prototype chip has been successfully tested up to 200°C ambient temperature without any heat sink or cooling mechanism. This gate-driver chip can drive SiC power FETs of the DC-DC converters in a HEV, and future chip modifications will allow it to drive the SiC power FETs of the traction drive inverter. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175ΰC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module.

scholarly journals Design and Implementation of 2.5kW IBFB-LLC DC/ DC Converter Using SiC Mosfet

2021 ◽  
Vol 31.2 (149) ◽  
pp. 7-14
Keyword(s):  
High Frequency ◽  
Power Flow ◽  
Input Voltage ◽  
Voltage Range ◽  
Zero Voltage Switching ◽  
Design And Implementation ◽  
Switching Losses ◽  
Power Switches ◽  
Isolation Transformer ◽  
Zero Voltage

Interleaved Boost Full Bridge integrated LLC resonant (IBFB- LLC) is an isolated DC/DC converter with directional power flow, which can cope with a wide input voltage range of PV applications. The main losses of the converter are switching losses of the power switches and transformers losses. This paper proposes a method to improve the efficiency of the IBFB converter due to zero voltage switching technique, in combination with employing new SiC MOSFET technology instead of the conventional Si MOSFET. In addition, Litz wire is also adopted to reduce the losses on the high frequency isolation transformer. Both numerical simulations and experiments with a prototype 2.5kW converter are implemented to verify the feasibility and effectiveness of the proposed solution.

A High Current (>1500A) Power Module for High Temperature, High Performance Applications Using SiC TMOS Power Switches

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000402-000406
Author(s):  
B. Passmore ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Extreme Environment ◽  
Wide Bandgap ◽  
Power Module ◽  
Power Modules ◽  
Power Switches ◽  
Bandgap Semiconductors ◽  
Transition Times ◽  
Switch Position

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.

scholarly journals High temperature, Smart Power Module for aircraft actuators

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000069-000074
Author(s):  
Khalil El Falahi ◽  
Stanislas Hascoët ◽  
Cyril Buttay ◽  
Pascal Bevilacqua ◽  
Luong-Viet Phung ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Power Module ◽  
Smart Power ◽  
Temperature Range ◽  
Electric Aircraft ◽  
Gate Driver ◽  
Proper Operation ◽  
More Electric Aircraft

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.

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