Electric Micro-Propulsion in Low Temperature Co-fired Ceramics

2013 ◽  
Vol 2013 (CICMT) ◽  
pp. 000137-000142
Author(s):  
Derek Reis ◽  
Jesse Taff ◽  
Donald Plumlee
Keyword(s):  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
Argon Plasma ◽  
Fluid Distribution ◽  
Inductively Coupled ◽  
Planar Structures ◽  
Plasma Erosion ◽  
Internal Fluid ◽  
Micro Propulsion ◽  
Rf Signal

This work focuses on the fabrication and assembly of miniature inductively-coupled plasma (ICP) electrostatic thrusters using DuPont's 951 Low Temperature Co-Fired Ceramics (LTCC). The use of LTCC allows for integration of electrical and fluidic features inside a hermetically sealed device that is resistant to plasma erosion. LTCC also allowed for the creation of cylindrical and planar structures which could be mated to form a single device. The thruster consists of a planar base, an antenna disc, and a plasma containment cylinder. The planar base contains internal fluid distribution channels as well as electrical interconnections. The antenna disc houses straight-through gas ports, electrical interconnects, as well as a planar spiral ICP antenna. The containment cylinder is used to contain argon plasma created by a radio frequency (RF) signal sent through the ICP antenna. The development of the fabrication process will be presented for the incorporation and alignment of all three LTCC components together to create a single thruster body. The results of the electrical and fluidic integration of the device will be evaluated and presented.

Characterization of the Fabrication Process of Rolled LTCC Structures

2012 ◽  
Vol 2012 (CICMT) ◽  
pp. 000251-000257
Author(s):  
Kelci Parrish ◽  
Jesse Taff ◽  
Mallory Yates ◽  
Derek Reis ◽  
Donald Plumlee
Keyword(s):  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
Argon Plasma ◽  
Fabrication Process ◽  
Silver Paste ◽  
Plasma Antenna ◽  
Inductively Coupled ◽  
Single Structure ◽  
Tube Structure

This work focuses on the fabrication and assembly of cylindrical plasma containment tubes using DuPont's 951 Low Temperature Co-fired Ceramics (LTCC) for use in miniature electrostatic thrusters. The use of LTCC allows for robustness post-firing yet flexibility in the “green” un-fired state. Some of the main advantages of this flexibility include the ability to stack or roll the LTCC sheets into various shapes as well as incorporating embedded electrical interconnections using silver paste on the rolled layers. The tube is used to contain argon plasma, which is generated by a spiral Inductively Coupled Plasma antenna and is also fabricated in LTCC. The tube also interfaces with two electrically biased grids on the opposite end, which accelerate the plasma out of the tube. These interfaces are highly dependent on the dimensions and tolerances of the containment tube. The development of the fabrication process will be presented for the incorporation of the tubes onto the base as a single structure. This includes constructing the antenna base, shaping the “rolled” LTCC containment tube using a jig and isostatic press, and integrating the tube and antenna base during the firing. Following the fabrication, measurements will be taken to determine the tube circularity and the hermeticity of the seal at the interface between the tube and the antenna base. The results will be presented and characterized to evaluate the effectiveness of the structure as well as the documentation of the development of a rolled LTCC tube structure integrated with a planar LTCC antenna base.

Mass Spectrometric Evidence for Suprathermal Ionization in an Inductively Coupled Argon Plasma

1981 ◽  
Vol 35 (4) ◽  
pp. 380-384 ◽  
Author(s):  
Robert S. Houk ◽  
Harry J. Svec ◽  
Velmer A. Fassel
Keyword(s):  
Inductively Coupled Plasma ◽  
Argon Plasma ◽  
Vacuum System ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Optical Spectrometry ◽  
Mass Spectrometric Evidence ◽  
Singly Charged ◽  
Coupled Plasmas ◽  
Charged Ions

Mass spectra have been obtained of species in the axial channel of an inductively coupled argon plasma by extracting ions from the inductively coupled plasma into a vacuum system housing a quadrupole mass spectrometer. Ionization temperatures ( Tion) are obtained from relative count rates of m/z-resolved ions according to two general types of ionization equilibrium considerations: (a) the ratio of doubly/singly charged ions of the same element, and (b) the ratio of singly charged ions from two elements of different ionization energy. The Tion values derived from measurement of Ar+2/Ar+, Ba+2/Ba+, Sr+2/Sr+, and Cd+/I+ are all greater than those expected from excitation temperatures measured by other workers. The latter three values for Tion are in reasonable agreement with values obtained by optical spectrometry for a variety of argon inductively coupled plasmas.

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

1999 ◽  
Vol 573 ◽  
Author(s):  
J. W. Lee ◽  
K. D. Mackenzie ◽  
D. Johnson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Silicon Dioxide Films

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

Low Temperature Synthesis of Single-Walled Carbon Nanotubes in an Inductively Coupled Plasma Chemical Vapor Deposition System

2008 ◽  
Vol 8 (5) ◽  
pp. 2526-2533 ◽  
Author(s):  
Cheng-Hui Weng ◽  
Chao-Shun Yang ◽  
Hsuan Lin ◽  
Chuen-Horng Tsai ◽  
Keh-Chyang Leou
Keyword(s):  
Carbon Nanotubes ◽  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Single Walled Carbon Nanotubes ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Single Walled Carbon ◽  
Inductively Coupled ◽  
Walled Carbon Nanotubes

In this work, we present a parametric study on the low temperature synthesis of single-walled carbon nanotubes (SWNTs) in an inductively coupled plasma (ICP) CVD system using dry bi-layered catalytic thin-films (Fe/Al and Ni/Al, deposited by electron-beam evaporation method) as the catalysts. With a low substrate temperature of 550 °C and above, SWNTs were successfully synthesized on both catalysts, as revealed from the characteristic peaks of SWNTs in the micro-Raman spectra. By the reduction of plasma power and the shortening of the process times, the lowest synthesis temperature of SWNTs achieved in our system was approached to 500 °C on Ni/Al catalysts; on the other hands, the lowest temperature for Fe/Al catalysts was 550 °C. Our results suggest that as compared with Fe/Al, Ni/Al is more favorable for plasma-enhanced CVD (PECVD) synthesis of SWNTs at low temperatures. This work can be used for further improvements and better understanding on the production processes of SWNTs by PECVD methods.

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