Versatile Z-Axis Interconnection for High Performance Electronics

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 001033-001050
Author(s):  
Rabindra Das ◽  
J. M. Lauffer ◽  
F.D. Egitto

The demand for high-performance, lightweight, portable computing power for next generation packaging is driving the industry toward miniaturization at a rate not seen before. Electronic packaging is evolving to meet the demands of higher functionality in ever smaller packages. To accomplish this, new packaging needs to be able to integrate more dies with greater function, higher I/O counts, smaller die pad pitches, and greater heat densities, while being pushed into smaller and smaller footprints. New packaging designs are emerging that require joining (stacking) of multiple packages, joining of different size packages, and flexibility and/or rigidity to accommodate requirements related to size, weight, and complexity. This paper presents a novel Z-axis interconnect approach for extending performance beyond the limits imposed by traditional approaches. Specifically, metal-to-metal z-axis electrical interconnection among substrates (sub-composites) of the same or varying size, or among flexible and rigid elements (rigid-flex), to form a single structure is described. The structure employs an electrically conductive medium to interconnect thin coreless substrates. The substrates are built in parallel, aligned, and laminated to form a variety of multilayer, high density structures including rigid, rigid-rigid, rigid-flex, stacked packages, or RF substrates. The Z-interconnect based structures offer many advantages over more conventional build-up technologies, for example, an increase in metal layer counts without the cumulative yield loss of sequential (build up) processing, placement of flex elements into any layer of the substrate, the opportunity for multiple flex layers within a rigid-flex substrate, the ability to connect multiple multilayer substrates of varying size, and the ability to connect between any two arbitrary metal layers within the rigid region without the use of plated through holes (PTHs), allowing for increased wiring density, and reduction or elimination of via stubs that cause signal attenuation, In addition, multilayer rigid-flex packages for a variety of applications are being developed. Several classes of flexible materials that can be used to form high-performance flexible packaging are discussed. Materials, including polyimides, PTFE, liquid crystal polymer (LCP), have been used to develop multilayer rigid-flex packages. The process allows fabrication of Z-interconnect conductive joints having diameters in the range of 55–500 microns. Via or component pitches down to 150 microns have been demonstrated. The processes and materials used to achieve smaller feature dimensions, satisfy stringent registration requirements, and achieve robust electrical interconnections are discussed. A number of RF structures have been designed and built with Z-interconnect technology, affording the flexibility to place wide signals, narrow signals and grounds and clearances only where needed. Electrically, S-parameter measurements revealed low loss at multi-gigahertz frequencies and the insertion loss for narrow, short lines and wide, long lines are similar. The electrically conductive adhesive used to form Z-interconnect shows good signal transmission to 25GHz. Z-interconnect substrates provide unique solutions for next generation complex packaging. Collectively, the results suggest that Z-interconnect technology may be attractive for a range of applications, not only where miniaturization is required, such as consumer products, but also in high performance large-area microelectronics such as supercomputers, radio frequency structures, etc.

2013 ◽  
Vol 2013 (1) ◽  
pp. 000574-000581
Author(s):  
Rabindra N. Das ◽  
John M. Lauffer ◽  
Frank D. Egitto

This paper presents a novel Z-axis interconnect approach for extending performance beyond the limits imposed by traditional approaches. Specifically, metal-to-metal z-axis electrical interconnection among substrates (subcomposites) of the same or varying size, or among flexible and rigid elements (rigid-flex), to form a single structure is described. The structure employs an electrically conductive medium to interconnect thin coreless substrates. The substrates are built in parallel, aligned, and laminated to form a variety of multilayer high density structures including rigid, rigid-rigid, rigid-flex, stacked packages, or RF substrates. The z-interconnect based structures offer many advantages over more conventional build-up technologies. For example, it enables designs having increased wiring density, leading to greatly reduced layer counts. When an increase in metal layer counts is required, z-interconnect avoids the cumulative yield loss of sequential (build up) processing. The parallel processing of cores and/or subcomposites leads to reduced fabrication cycle time. Avoidance of through hole drilling allows for reduction or elimination of via stubs that cause signal attenuation at high frequencies. In addition, multilayer rigid-flex packages for a variety of applications are being developed. For these applications, z-interconnect allows for placement of flex elements into any layer of the substrate, the opportunity for multiple flex layers within a rigid-flex substrate, the ability to connect multiple multilayer substrates of varying size, and the ability to connect between any two arbitrary metal layers within the rigid region without the use of plated through holes (PTHs). The process allows fabrication of z-interconnect conductive joints having diameters in the range of 55–500 microns. Via or component pitches down to 150 microns have been demonstrated. A number of RF structures have been designed and built with z-interconnect technology, affording the flexibility to place wide signals, narrow signals and grounds and clearances only where needed. Electrically, S-parameter measurements revealed low loss at multi-gigahertz frequencies and the insertion loss for narrow, short lines and wide, long lines are similar. The electrically conductive adhesive used to form z-interconnects shows good signal transmission to 25GHz. Z-interconnect technology provides unique solutions for next generation complex packaging products.


2014 ◽  
Vol 2014 (1) ◽  
pp. 000141-000147 ◽  
Author(s):  
John M. Lauffer ◽  
Kevin Knadle

Common themes across all segments of electronic packaging today are density and performance. High density interconnect (HDI) technology is one of the most commonly utilized methods for electronic package density improvement, while many different areas have been investigated for performance improvement, from low loss dielectric and conductor materials, to via design and via stub reduction. Electrical performance and density requirements are sometimes complementary, but often times, conflicting with one another. This paper will describe the design, materials, fabrication, and reliability of a new Z-Interconnect technology that addresses both high density and high performance demands simultaneously. Z-Interconnect technology uses an electrically conductive adhesive to electrically interconnect several cores (Full Z) or sub-composites (Sub Z) in a single lamination process. Z-Interconnect technology will be compared and contrasted to other commonly used solutions to the performance and density challenges. HDI or sequential build-up technology is a pervasive solution to the density demands in semiconductor packaging and consumer electronics (e.g. Smart phones), but has not caught hold in HPC or A&D printed wiring board (PWB) applications. One solution for PWB electrical performance enhancement is plated through hole (PTH) stub reduction by “back drilling” the unwanted portion of the PTH. Pb-free reflow and Current Induced Thermal Cycling (CITC) test results of product coupons and specially designed test vehicles, having component pitches down to 0.4mm, will be presented. Z-Interconnect test vehicles have survived 6X Pb-free (260C) reflow cycles, followed by greater than 3000 cycles of 23C–150C CITC cycles. Test vehicle and product coupons also easily survive 10 or more 23C–260C CITC cycles.


2008 ◽  
Vol 23 (2) ◽  
pp. 101-105 ◽  
Author(s):  
Takeyoshi Taguchi ◽  
Christian Brönnimann ◽  
Eric F. Eikenberry

A novel type X-ray detector, called PILATUS, has been developed at the Paul Scherrer Institut in Switzerland during the last decade. PILATUS detectors are two-dimensional hybrid pixel array detectors, which operate in single-photon counting mode. PILATUS detectors feature a very wide dynamic range (1:1 000 000), very short readout time (<3.0 ms), no readout noise, and very high counting rate (>2×106counts/s/pixel). In addition, a lower energy threshold can be set in order to suppress fluorescence background from the sample, thus a very good signal-to-noise ratio is achieved. The combination of these features for area detectors is unique and thus the PILATUS detectors are considered to be the next generation X-ray detectors. The basic building block of all the detectors is the PILATUS module having an active area of 83.8×33.5 mm2. The PILATUS 100K is a complete detector system with one module. PILATUS detector systems can have other configurations, including large area systems consisting of 20 to 60 modules that can cover up to an area of 431×448 mm2. Such large systems are mainly used for macromolecular structure determination, such as protein crystallography and small angle X-ray scattering. The PILATUS 100K detector can be easily adapted to many systems; the single-module detector is integrated to an in-house X-ray diffraction (XRD) system. Examples of XRD measurements with the PILATUS 100K detector are given.


2021 ◽  
Author(s):  
Xiao Min Zhang ◽  
Xiao-Li Yang ◽  
Bin Wang

Abstract Printable electrically conductive adhesive with high electrical conductivity and good mechanical properties has wide application prospect in electronic device. In order to explore new conductive fillers of interconnecting materials in electronic circuit and electronic packaging industries, silver nanopowders were prepared by DC arc plasma method with high pure. The silver nanopowders present a spherical structure, the particle’s diameter range from 15 to 220 nm. In this paper, a high performance electrically conductive adhesive (ECA) was prepared. This ECA was fabricated by mixing silver nanopowders with epoxy resin and was screen-printed to a required shape. It was found that the ECA can be solidified through a low temperature sintering method in the air at 150 ℃ for 10 min. The electrical and mechanical of above ECA were investigated and characterized. The ECA filled with 75% silver nanopowders exhibits excellent performances, including high electrical conductivity (9.5×10-4 Ω·cm), high bonding strength ( 8.3 MPa). Based on the performance characteristics, the ECA applications in flexible printed electrodes and interconnecting materials are demonstrated.


1989 ◽  
Vol 149 ◽  
Author(s):  
Jack L. Stone

ABSTRACTSignificant deployment of the promising option of photovoltaics for energy will require cost-effective technologies that compete effectively with conventional sources. One such option utilizes thin films of a variety of photovoltaic materials. These thin films must be manufacturable in large quantities, and they must have high performance and acceptable reliability. Amorphous silicon (a-Si) was the first successfully demonstrated thin film to be widely adopted by industry. This material is already used to power a larger number of such consumer products as calculators, watches, and battery chargers. Recently, a-Si solar cells have been scaled up to large-area modules for power applications. Large fields of these modules have been deployed by utility companies for their evaluation. Polycrystalline thin films such as copper indium diselenide (CIS) and cadmium telluride (CdTe) have recently shown promise in following the path of a-Si. High-efficiency, large-area submodules have been successfully tested. By combining these materials in hybrid combinations, researchers have demonstrated much higher efficiencies. Even higher efficiencies have been demonstrated with more conventional materials such as silicon and gallium arsenide in thin-film form. Such devices have a high degree of acceptability because of their successful application for power uses in their non-thin-film form. Extensive examples are given to demonstrate the technical viability of these photovoltaic approaches for possible use in utility-scale power plants and in other near-term, highvalue markets.


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