Flip-Chip Technologies, Applications, Market Status and Forecasts

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001797-001828 ◽  
Author(s):  
Christophe Zinck ◽  
Jean-Marc Yannou ◽  
Jérôme Baron ◽  
Phil Garou
Keyword(s):  
Power Distribution ◽  
Flip Chip ◽  
Lower Cost ◽  
Signal Propagation ◽  
Cmos Technology ◽  
Wire Bonding ◽  
Power Devices ◽  
Market Status ◽  
Bonding Technology ◽  
To Come

Renewed interest in flip-chip technologies in concurrently motivated in many application areas by such factors as the rising cost of gold used for wire bonding, the need for low thickness devices, continued CMOS downscaling, higher currents and temperatures, and lower voltages. Today, many sophisticated devices can no longer be packaged with wire bonding technology and the mobile applications are more and more requiring footprint and weight reduction coupled with higher electrical performances (signal propagation and power distribution). The emergence of the 28nm CMOS technology node in particular, poses new quality and reliability constraints on interconnect technologies so as to cope with the increasing fragility of the back end of line, which may disqualify wire bonding for good. Not to mention the ever increasing IO density, making it necessary to develop new bumping and substrate technologies. It is not any longer only about higher performance and lower cost reliable interconnect, assembly and packaging technologies: if remained unresolved, the above constraints will prove to be bottlenecks if not obstacles to the continuation of Moore's law. In this presentation, we will first focus on Flip-Chip technologies and their evolution. We will present the main players, their facilities and technologies. We will sketch a worldwide roadmap of flip-chip featuring such varied applications as wireless digital, PC processors, RF and power devices. We will then present our market forecasts and explain how we see these innovations will modify the market of packaging interconnections and assembly in the years to come.

Fine line panel level fan out changes the SiP landscape

2018 ◽  
Vol 2018 (1) ◽  
pp. 000349-000354
Author(s):  
David Fang ◽  
Michael Hsu ◽  
CC Chang ◽  
KW Chung ◽  
Alex Liu ◽  
...  
Keyword(s):  
Production Efficiency ◽  
Flip Chip ◽  
Lower Cost ◽  
Transmission Loss ◽  
New Technology ◽  
Moore’S Law ◽  
Moore's Law ◽  
Fine Line ◽  
To Come ◽  
Application Requirements

Abstract Moore's Law has been through many challenges in the last few years. The transistors continued to shrink to smaller sizes but the benefit of better performance and lower cost that comes along with shrinking is facing difficulties. Semiconductor industries are trying to come up with new ways to keep the Moore's Law going on two different fronts: where foundries are working on more Moore solutions and packaging houses are working on more than Moore solutions. Recently the industry has been considering the chip splitting and re-constitution in the form of SiP which has relatively shorter development time and lower cost than the SoC. But traditional SiP with wirebonding or FC connections to substrate will lead to high transmission loss and power consumption. A new fine line SiP solution is required to shorten the connection between chips to improve the performance. Different from the 3DIC and 2.5DIC technologies, fine line panel level fan out has the advantages of good performance, design flexibility, and high production efficiency. This paper will discuss about the challenges in setting up this technology including establishing standards, tools preparation, and process difficulties. The dedicated machines that handle the fine line panel level fan out are critical. It is not easy to select suitable tools for this new technology. We also need to co-develop with tool vendors for some process stages which suitable tools from existing industries could not be easily found. Additionally, panel warpage and chip shift are two of major process challenges. Experiences on overcoming these difficulties will be shared. Different structures and processes have been developed for varied application requirements. The chip first approach encapsulates chips and then build RDL layers on the encapsulation surface. It is suitable for mobile AP, baseband, ASIC, PMIC, and memory. The chip last solution build RDL first, then flip chip mounting the bumped chips on the RDL. The RDL can be tested before the mounting of chips. It is suitable for CPU, GPU, FPGA, and thermal sensitive devices. Pillars in fan out is a chip middle solution. It uses Cu pillars to connect top and bottom RDLs which is good for chip stacking. Currently the 5/5um line/space is already been qualified. 3/3um under development and tool capability is 2/2um. Several real cases will be demonstrated in this paper to help the readers understand this technology. This technology is expected to be crucial for the coming era of 5G, automotive, IoT, and AI. It is believed that this technology can be applied to different kinds of end applications. For example, multi-chip stacking in a fan out package to achieve high bandwidth performance. Fan out stacking of logic and memory chips which can replace the existing PoP. Using fan out to integrate passives and/or other chips can achieve a compact SiP. Fan out could be one of the embedded substrate. Fan out RDL process can also be a suitable platform for antenna in package designs. This paper will introduce the challenges of Moore's law as beginning, and then explain the advantages and the challenges of fine line panel fan out technology, and the proposed approaches to address those challenges.

Advances in Wire Bonding Technology for Different Bonding Wire Material

2015 ◽  
Vol 2015 (1) ◽  
pp. 000406-000412 ◽  
Author(s):  
Ivy Qin ◽  
Aashish Shah ◽  
Hui Xu ◽  
Bob Chylak ◽  
Nelson Wong
Keyword(s):  
Flip Chip ◽  
Technology Development ◽  
Copper Wire ◽  
Low Cost ◽  
Wire Bonding ◽  
Bonding Wire ◽  
Wire Material ◽  
Ball Bonding ◽  
Bonding Technology ◽  
The Right

With all the advances in 2.5D and 3D packaging, wire bonding is still the most popular interconnect technology and the workhorse of the industry. Wire bonding technology has been the lower cost solution comparing to flip chip. Wire bonding package cost is much reduced with the introduction of Copper wire bonding. Technology development and innovation in wire bonding provides new packaging solutions that improves performance and reduces cost. This paper reviews the recent innovations in ball bonding technology to provide optimized ball bonding solutions targeted for different bonding wire material. It examines the different challenges for the alternative wire types including Cu wire, Pd coated, and AuPd coated Cu wire and Ag Alloy wire. We will discuss key development in ball bonding equipment, process and material to overcome the challenges and provide robust low cost solutions. The advantages of each wire type are outlined, and guidelines to select the right bonding wire type per application requirements are provided.

Microwave Frequency Signal Propagation in Backside Focused Ion Beam (FIB) Fabricated Interconnects

2002 ◽  
Author(s):  
Jeremy A. Rowlette ◽  
M. DiBattista ◽  
Seth Fortuna ◽  
Richard H. Livengood
Keyword(s):  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Microwave Frequency ◽  
Signal Propagation ◽  
Element Model ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Digital Signals ◽  
Circuit Element

Abstract We present for the first time the results of a comprehensive study of the increase in propagation delay of multi-GHz digital signals due to backside FIB fabricated interconnects. Signal propagation delays were measured in 90nm CMOS technology circuits as a function of interconnect material properties and physical dimensions. We compare the empirical results of this study to SPICE calculations, which were based on an equivalent circuit element model of the interconnect. We show that the empirical data obtained in these experiments supports the validity of the equivalent electrical model for the frequency range typically encountered in modern microprocessor debug. Based on the results or our analysis, we comment on the future capability of backside FIB circuit edit (CE) interconnection technology as it pertains to the debug of flip-chip packaged IC’s operating at multi-GHz frequency.

scholarly journals Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers

2021 ◽  
Vol 11 (15) ◽  
pp. 7057
Author(s):  
Lin Wang ◽  
Zhe Cheng ◽  
Zhi-Guo Yu ◽  
De-Feng Lin ◽  
Zhe Liu ◽  
...  
Keyword(s):  
Flip Chip ◽  
High Electron Mobility Transistors ◽  
Wire Bonding ◽  
High Electron ◽  
Parasitic Inductance ◽  
Switching Performance ◽  
Turn On ◽  
Electron Mobility Transistors ◽  
Chip Technology ◽  
Switching Characteristics

Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed and fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to reduce parasitic inductance in both the driver-gate and drain-source loops. Modules were prepared using both methods and the double-pulse test was applied to evaluate and compare their switching characteristics. The gate voltage (Vgs) waveform of the flip-chip module showed no overshoot during the turn-on period, and a small oscillation during the turn-off period. The probabilities of gate damage and false turn-on were greatly reduced. The inductance in the drain-source loop of the module was measured to be 3.4 nH. The rise and fall times of the drain voltage (Vds) were 12.9 and 5.8 ns, respectively, with an overshoot of only 4.8 V during the turn-off period under Vdc = 100 V. These results indicate that the use of flip-chip technology along with the integration of GaN HEMTs with driver dies can effectively reduce the parasitic inductance and improve the switching performance of GaN half-bridge modules compared to wire bonding.

scholarly journals Toward a fully integrated automotive radar system-on-chip in 22 nm FD-SOI CMOS

2021 ◽  
pp. 1-9
Author(s):  
Philipp Ritter
Keyword(s):  
Millimeter Wave ◽  
Flip Chip ◽  
Printed Circuit Board ◽  
Digital Signal ◽  
Cmos Technology ◽  
Radar System ◽  
Circuit Board ◽  
Processing Unit ◽  
Automotive Radar ◽  
On Chip

Abstract Next-generation automotive radar sensors are increasingly becoming sensitive to cost and size, which will leverage monolithically integrated radar system-on-Chips (SoC). This article discusses the challenges and the opportunities of the integration of the millimeter-wave frontend along with the digital backend. A 76–81 GHz radar SoC is presented as an evaluation vehicle for an automotive, fully depleted silicon-over-insulator 22 nm CMOS technology. It features a digitally controlled oscillator, 2-millimeter-wave transmit channels and receive channels, an analog base-band with analog-to-digital conversion as well as a digital signal processing unit with on-chip memory. The radar SoC evaluation chip is packaged and flip-chip mounted to a high frequency printed circuit board for functional demonstration and performance evaluation.

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