Wafer Level Packaging Cost Modeling

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 002312-002325 ◽  
Author(s):  
Chet A. Palesko

Wafer level packaging is often the most cost effective approach to achieve miniaturization. However, if it is used for the wrong application, it can be very expensive. The significant difference in printed circuit board interconnect design rules and semiconductor interconnect design rules must be addressed in any type of packaging approach, and presents unique challenges for wafer level packaging. If miniaturization is not required, this translation of semiconductor design rules to PCB design rules is most easily accomplished in a traditional wire bond package. However, when the package size and the die size must be the same, the package IO count is limited. Fanout WLP is an option to overcome the WLP IO restriction, but still achieve cost effective miniaturization. We will present the results of activity based cost and yield modeling of traditional wafer level packaging, fanout wafer level packaging, and flip chip packaging across a range of die sizes, package sizes, and defect densities. These results will show the most cost effective technology to match a variety of applications and package parameters.

2016 ◽  
Vol 2016 (S2) ◽  
pp. S1-S23 ◽  
Author(s):  
Karl-Friedrich Becker ◽  
Tanja Braun ◽  
S. Raatz ◽  
M. Minkus ◽  
V. Bader ◽  
...  

Fan-out Wafer Level Packaging (FOWLP) is one of the latest packaging trends in microelectronics. The technology has a high potential in significant package miniaturization concerning package volume but also in thickness. Main advantages of FOWLP are the substrate-less package, lower thermal resistance, higher performance due to shorter interconnects together with direct IC connection by thin film metallization instead of wire bonds or flip chip bumps and lower parasitic effects. Especially the inductance of the FOWLP is much lower compared to FC-BGA packages. In addition the redistribution layer can also provide embedded passives (R, L, C) as well as antenna structures using a multi-layer structure. It can be used for multi-chip packages for System in Package (SiP) and heterogeneous integration. Manufacturing is currently done on wafer level up to 12″/300 mm and 330 mm respectively. For higher productivity and therewith lower costs larger form factors are forecasted for the near future. Instead of following the wafer level approach to 450 mm, panel level packaging will be the next big step. Sizes for the panel could range up to 18″×24″ or even larger influenced by different technologies coming from e.g. printed circuit board, solar or LCD manufacturing. However, an easy upscaling of technology when moving from wafer to panel level is not possible. Materials, equipment and processes have to be further developed or at least adapted. An overview of state of technology for panel level packaging will be presented and discussed in detailed.


Author(s):  
Amy Lujan

In recent years, there has been increased focus on fan-out wafer level packaging with the growing inclusion of a variety of fan-out wafer level packages in mobile products. While fan-out wafer level packaging may be the right solution for many designs, it is not always the lowest cost solution. The right packaging choice is the packaging technology that meets design requirements at the lowest cost. Flip chip packaging, a more mature technology, continues to be an alternative to fan-out wafer level packaging. It is important for many in the electronic packaging industry to be able to determine whether flip chip or fan-out wafer level packaging is the most cost-effective option. This paper will compare the cost of flip chip and fan-out wafer level packaging across a variety of designs. Additionally, the process flows for each technology will be introduced and the cost drivers highlighted. A variety of package sizes, die sizes, and design features will be covered by the cost comparison. Yield is a key component of cost and will also be considered in the analysis. Activity based cost modeling will be used for this analysis. With this type of cost modeling, a process flow is divided into a series of activities, and the total cost of each activity is accumulated. The cost of each activity is determined by analyzing the following attributes: time required, labor required, material required (consumable and permanent), capital required, and yield loss. The goal of this cost comparison is to determine which design features drive a design to be packaged more cost-effectively as a flip chip package, and which design features result in a lower cost fan-out wafer level package.


2017 ◽  
Vol 2017 (1) ◽  
pp. 000325-000330 ◽  
Author(s):  
Wei Zhao ◽  
Mark Nakamoto ◽  
Karthikeyan Dhandapani ◽  
Brian Henderson ◽  
Ron Lindley ◽  
...  

Abstract Electrical Chip Board Interaction (e-CBI) has emerged as a new risk in chip design as silicon die can directly interact with printed circuit board (PCB) in substrate-less wafer level packaging technology. To assess this risk Qualcomm Technologies, Inc. has converted an existing test chip to wafer level packaging technology. Both the measured data and simulation results show that e-CBI risk is significant and must be carefully managed.


Author(s):  
Philipp Ritter

Abstract Next-generation automotive radar sensors are increasingly becoming sensitive to cost and size, which will leverage monolithically integrated radar system-on-Chips (SoC). This article discusses the challenges and the opportunities of the integration of the millimeter-wave frontend along with the digital backend. A 76–81 GHz radar SoC is presented as an evaluation vehicle for an automotive, fully depleted silicon-over-insulator 22 nm CMOS technology. It features a digitally controlled oscillator, 2-millimeter-wave transmit channels and receive channels, an analog base-band with analog-to-digital conversion as well as a digital signal processing unit with on-chip memory. The radar SoC evaluation chip is packaged and flip-chip mounted to a high frequency printed circuit board for functional demonstration and performance evaluation.


2000 ◽  
Author(s):  
Y. T. Lin ◽  
P. J. Tang ◽  
K. N. Chiang

Abstract The demands of electronic packages toward lower profile, lighter weight, and higher density of I/O lead to rapid expansion in the field of flip chip, chip scale package (CSP) and wafer level packaging (WLP) technologies. The urgent needs of high I/O density and good reliability characteristic lead to the evolution of the ultra high-density type of non-solder interconnection such as the wire interconnect technology (WIT). The new technology using copper posts to replace the solder bumps as interconnections shown a great improvement in the reliability life. Moreover, this type of wafer level package could achieve higher I/O density, as well as ultra fine pitch. This research will focus on the reliability analysis of the WIT package structures in material selection and structural design, etc. This research will use finite element method to analyze the physical behavior of packaging structures under thermal cycling condition to compare the reliability characteristics of conventional wafer level package and WIT packages. Parametric studies of specific parameters will be performed, and the plastic and temperature dependent material properties will be applied to all of the models.


2002 ◽  
Vol 124 (3) ◽  
pp. 205-211 ◽  
Author(s):  
John H. Lau ◽  
S. W. Ricky Lee ◽  
Stephen H. Pan ◽  
Chris Chang

An elasto-plastic-creep analysis of a low-cost micro via-in-pad (VIP) substrate for supporting a solder bumped flip chip in a chip scale package (CSP) format which is soldered onto a printed circuit board (PCB) is presented in this study. Emphasis is placed on the design, materials, and reliability of the micro VIP substrate and of the micro VIP CSP solder joints on PCB. The solder is assumed to obey Norton’s creep law. Cross-sections of samples are examined for a better understanding of the solder bump, CSP substrate redistribution, micro VIP, and solder joint. Also, the thermal cycling test results of the micro VIP CSP PCB assembly is presented.


2013 ◽  
Vol 479-480 ◽  
pp. 524-529
Author(s):  
C.T. Pan ◽  
F.T. Hsu ◽  
C.C. Nien ◽  
Z.H. Liu ◽  
Y.J. Chen ◽  
...  

Small and efficient energy harvesters, as a renewable power supply, draw lots of attention in the last few years. This paper presents a planar rotary electromagnetic generator with copper coils fabricated by using printed circuit board (PCB) as inductance and Nd-Fe-B magnets as magnetic element. Coils are fabricated on PCB, which is presumably cost-effective and promising methods. 28-pole Nd-Fe-B magnets with outer diameter of 50 mm and thickness of 2 mm was sintered and magnetized, which can provide magnetic field of 1.44 Tesla. This harvester consists of planar multilayer with multi-pole coils and multi-pole permanent magnet, and the volume of this harvester is about 50x50x2.5 mm3. Finite element analysis is used to design energy harvesting system, and simulation model of the energy harvester is established. In order to verify the simulation, experiment data are compared with simulation result. The PCB energy harvester prototype can generate induced voltage 0.61 V and 13.29mW output power at rotary speed of 4,000 rpm.


2010 ◽  
Vol 2010 (DPC) ◽  
pp. 000425-000445
Author(s):  
Paul Siblerud ◽  
Rozalia Beica ◽  
Bioh Kim ◽  
Erik Young

The development of IC technology is driven by the need to increase performance and functionality while reducing size, power and cost. The continuous pressure to meet those requirements has created innovative, small, cost-effective 3-D packaging technologies. 3-D packaging can offer significant advantages in performance, functionality and form factor for future technologies. Breakthrough in wafer level packaging using through silicon via technology has proven to be technologically beneficial. Integration of several key and challenging process steps with a high yield and low cost is key to the general adoption of the technology. This paper will outline the breakthroughs in cost associated with an iTSV or Via-Mid structure in a integrated process flow. Key process technologies enabling 3-D chip:Via formationInsulator, barrier and seed depositionCopper filling (plating),CMPWafer thinningDie to Wafer/chip alignment, bonding and dicing This presentation will investigate these techniques that require interdisciplinary coordination and integration that previously have not been practiced. We will review the current state of 3-D interconnects and the of a cost effective Via-first TSV integrated process.


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