scholarly journals Deep level contribution to the carrier generation and recombination in high resistivity Si irradiated by neutrons

2011 ◽  
Vol 51 (4) ◽  
pp. 345-350 ◽  
Author(s):  
Juozas Vaitkus ◽  
Rokas Bondzinskas ◽  
Vaidotas Kažukauskas ◽  
Paulius Malinovskis ◽  
Algirdas Mekys ◽  
...  
Keyword(s):  
Deep Level ◽  
High Resistivity ◽  
Carrier Generation

Deep Level Centers in Carbon-Doped High Resistivity GaN

2014 ◽  
Vol 997 ◽  
pp. 492-495
Author(s):  
Huan Cui ◽  
Li Wu Lu ◽  
Ling Sang ◽  
Bai He Chen ◽  
Zhi Wei He ◽  
...  
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Hall Measurement ◽  
High Resistivity ◽  
Organic Chemical ◽  
Carbon Doped ◽  
Metal Organic ◽  
High Level ◽  
Organic Chemical Vapor Deposition

The deep levels of carbon doped high resistivity (HR) GaN samples grown by metal-organic chemical vapor deposition (MOCVD) has been investigated using thermally stimulated current (TSC) spectroscopy and high temperature (HT) Hall measurement. Two different thickness of 100 and 300 nm were used to be compared. It was found that four distinct deep levels by TSC and one deep level by HT Hall measurement were observed in both samples, which means great help for the decrease of leakage current and lifetime limitations of device utilizing the structure. The activation energy of these levels was calculated and their possible origins were also proposed. The low temperature traps, might be related to VN, 0.50 and 0.52eV related to incorporate a high level carbon, 0.57eV related to VGa, 0.59eV related to CGaor NGa, 0.91 and 0.97eV related to interstitial N1.

Investigation of Deep Levels In X-Ray Detector Material With Photo Induced Current Transient Spectroscopy (Picts)

1993 ◽  
Vol 302 ◽  
Author(s):  
C Eiche ◽  
M Fiederle ◽  
J Weese ◽  
D Maier ◽  
D Ebling ◽  
...  
Keyword(s):  
Tikhonov Regularization ◽  
Deep Level ◽  
Great Influence ◽  
Simulated Data ◽  
Radiation Detectors ◽  
Deep Levels ◽  
High Resistivity ◽  
Pulse Excitation ◽  
Detector Performance ◽  
Transient Spectroscopy

ABSTRACTDeep levels have a great influence on the recombination behavior of the free carriers in semiconductors. For several years PICTS has been used to investigate the deep levels in high resistivity material such as GaAs or CdTe used in detector applications. An important feature of the PICTS measurements is the analysis of the current transients after pulse excitation. We propose using a new method based on Tikhonov regularization. This method was implemented in the program FTIKREG (Fast Tikhonov Regularization) by one of the authors. The superior resolution of the regularization method in comparison to conventional techniques is shown using simulated data. Moreover, the method is applied to investigate deep levels in CdTe:Cl, SI-GaAs and GaAs:Cr samples used for room temperature radiation detectors. A relation between deep level properties and detector performance is proposed.

Deep Trap Characterization In GaN Using Thermal And Optical Admittance Spectroscopy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Krtschil ◽  
H. Witte ◽  
M. Lisker ◽  
J. Christen ◽  
U. Birkle ◽  
...  
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Deep Trap ◽  
Infrared Region ◽  
Activation Energies ◽  
High Resistivity ◽  
Admittance Spectroscopy ◽  
Thermal Transitions ◽  
Interface Defect

AbstractDeep defect levels and the optical as well as thermal transitions of carriers from the levels into the corresponding bands were analyzed using Thermal and Optical Admittance Spectroscopy. High resistivity GaN-layers grown by MBE and heterostructures consisting of n-type GaN-layers grown with Low Pressure Chemical Vapor Deposition on 6H-SiC substrates are investigated. In the MBE-grown GaN layers we determine deep electron traps with thermal activation energies of EA=(0.45±0.04)eV and EA=(0.65±0.03)eV. Furthermore, three different kinds of optical transitions were distinguished by Optical Admittance Spectroscopy: near band gap transitions including the transition between the valence band and a shallow donor 50meV below the conduction band, a peak at 2.1eV associated with the yellow photoluminescence band and various deep level-band transitions in the infrared region.The high sensitivity of the TAS to interface defect states was used to investigate GaN/SiC heterostructures. We found an interface defect state at 70 … 90meV. Furthermore, one level was obtained originating from the epitaxial GaN-layer having an activation energy of 63±3meV. A defect distribution was identified in the p-type SiC-substrate with activation energies between 160meV and 180meV.

Deep-level defects in high-resistivity GaAs grown by the horizontal Bridgman technique

1992 ◽  
Vol 7 (6) ◽  
pp. 731-737 ◽  
Author(s):  
M Jordan ◽  
M Linde ◽  
T Hangleiter ◽  
J Spaeth
Keyword(s):  
Deep Level ◽  
High Resistivity ◽  
Bridgman Technique

Technology computer aided design based deep level transient spectra: Simulation of high-purity germanium crystals

2021 ◽  
Author(s):  
Johan Lauwaert
Keyword(s):  
High Purity ◽  
Computer Aided Design ◽  
Deep Level ◽  
High Resistivity ◽  
High Purity Germanium ◽  
Computer Aided ◽  
Transient Spectra ◽  
Transient Spectroscopy ◽  
Aided Design ◽  
Dlts Spectra

Abstract Very often Deep Level Transient Spectroscopy (DLTS) specimens deviate from ideal textbook examples making the interpretation of spectra a huge challenge. This challenge introduces inaccurate estimates of the emission signatures and the lack of appropriate estimates for the concentrations of the observed trap levels. In this work it is shown with the example of high-purity germanium that Technology computer aided design including symbolic differentiation provides the necessary numerical stability over a wide temperature range to model DLTS spectra. Moreover this high-purity germanium is a quasi intrinsic semiconductor for which it is well-known that the original small signal theory can introduce strong errors. It is furthermore shown that the parasitic impact of fractional filling and high resistivity material can be modelled and that these modelled spectra can in the future assist the interpretation of experimental results.

Implant Isolation of Device Structures Containing Buried, Highly-Doped Layers

1990 ◽  
Vol 216 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
L. A. D'Asaro ◽  
W. S. Hobson ◽  
T. R. Fullowan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Deep Level ◽  
Dose Range ◽  
Hydrogen Ion ◽  
Current Gain ◽  
High Resistivity ◽  
Device Structures ◽  
Hydrogen Ion Implantation ◽  
Relative Thermal Stability ◽  
Thermal Stability Of

ABSTRACTThe formation of high resistivity (> 107 Ω□) regions in GaAs-AlGaAs HBT and SEED structures by oxygen and hydrogen ion implantation is described. Multiple energy implants in the dose range 1013 cm−3 (for O+) and 1015 cm−2 (for H+), followed by annealing around 500°C are necessary to isolate structures ∼2 μm thick. In each case, the evolution of the sheet resistance of the implanted material with annealing is consistent with a reduction in hopping probabilities of trapped carriers between deep level states for temperatures up to ∼600°C, followed by significant annealing of these deep levels. A comparison of the relative thermal stability of O+ or H+ ion implantisolated p+ material is given. Small geometry (2 × 9 μm2) HBTs exhibiting current gain of 44 and cut-off frequency fT as high as 45 GHz are demonstrated using implant isolation.

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