Field-enhanced carrier-generation effect of deep-level centers in semiconductors

1993 ◽  
Vol 57 (6) ◽  
pp. 529-532
Author(s):  
Koubao Ding ◽  
Xiumiao Zhang
Keyword(s):  
Deep Level ◽  
Generation Effect ◽  
Carrier Generation

scholarly journals Deep level contribution to the carrier generation and recombination in high resistivity Si irradiated by neutrons

2011 ◽  
Vol 51 (4) ◽  
pp. 345-350 ◽  
Author(s):  
Juozas Vaitkus ◽  
Rokas Bondzinskas ◽  
Vaidotas Kažukauskas ◽  
Paulius Malinovskis ◽  
Algirdas Mekys ◽  
...  
Keyword(s):  
Deep Level ◽  
High Resistivity ◽  
Carrier Generation

Generation and Associative Encoding in Young and Old Adults

2008 ◽  
Vol 55 (1) ◽  
pp. 23-30 ◽  
Author(s):  
Laurence Taconnat ◽  
Charlotte Froger ◽  
Mathilde Sacher ◽  
Michel Isingrini
Keyword(s):  
Task Difficulty ◽  
Generation Effect ◽  
Elderly Adults ◽  
Generation Task ◽  
Younger Adults ◽  
Old Adults ◽  
Strength Of Association ◽  
Target Words

Abstract. The generation effect (i.e., better recall of the generated items than the read items) was investigated with a between-list design in young and elderly participants. The generation task difficulty was manipulated by varying the strength of association between cues and targets. Overall, strong associates were better recalled than weak associates. However, the results showed different generation effect patterns according to strength of association and age, with a greater generation effect for weak associates in younger adults only. These findings suggest that generating weak associates leads to more elaborated encoding, but that elderly adults cannot use this elaborated encoding as well as younger adults to recall the target words at test.

The Generation Effect: Do Test Instructions Influence the Size of the Effect?

1992 ◽  
Author(s):  
Patricia A. de Winstanley ◽  
Wendy A. Herberlein
Keyword(s):  
Generation Effect

LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-233-C4-241
Author(s):  
B. Hamilton ◽  
A. R. Peaker ◽  
D. R. Wight
Keyword(s):  
Gallium Phosphide ◽  
Deep Level

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

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