Implant Isolation of Device Structures Containing Buried, Highly-Doped Layers

1990 ◽  
Vol 216 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
L. A. D'Asaro ◽  
W. S. Hobson ◽  
T. R. Fullowan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Deep Level ◽  
Dose Range ◽  
Hydrogen Ion ◽  
Current Gain ◽  
High Resistivity ◽  
Device Structures ◽  
Hydrogen Ion Implantation ◽  
Relative Thermal Stability ◽  
Thermal Stability Of

ABSTRACTThe formation of high resistivity (> 107 Ω□) regions in GaAs-AlGaAs HBT and SEED structures by oxygen and hydrogen ion implantation is described. Multiple energy implants in the dose range 1013 cm−3 (for O+) and 1015 cm−2 (for H+), followed by annealing around 500°C are necessary to isolate structures ∼2 μm thick. In each case, the evolution of the sheet resistance of the implanted material with annealing is consistent with a reduction in hopping probabilities of trapped carriers between deep level states for temperatures up to ∼600°C, followed by significant annealing of these deep levels. A comparison of the relative thermal stability of O+ or H+ ion implantisolated p+ material is given. Small geometry (2 × 9 μm2) HBTs exhibiting current gain of 44 and cut-off frequency fT as high as 45 GHz are demonstrated using implant isolation.

Meyer-Neldel Rule on thermal stability parameters (trap depth and frequency factor) of luminescence signals in quartz

2021 ◽  
Author(s):  
Zuzanna Kabacińska ◽  
Alida Timar-Gabor ◽  
Benny Guralnik
Keyword(s):  
Activation Energy ◽  
Thermal Stability ◽  
Hydrogen Diffusion ◽  
Dose Range ◽  
Accurate Determination ◽  
Frequency Factor ◽  
Proton Conduction ◽  
High Dose ◽  
Compensation Law ◽  
Thermal Stability Of

<p>Thermally activated processes can be described mathematically by the Arrhenius equation. The Meyer-Neldel Rule (MNR), or compensation law, linearly relates the pre-exponent term to the logarithm of the excitation enthalpy for processes that are thermally driven in an Arrhenian manner. This empirical rule was observed in many areas of materials science, in physics, chemistry, and biology. In geosciences it was found to uphold in hydrogen diffusion (Jones 2014a) and proton conduction (Jones 2014b) in minerals.</p><p>Trapped charge dating methods that use electron spin resonance (ESR) or optically or thermally stimulated luminescence (OSL and TL) are based on the dose-dependent accumulation of defects in minerals such as quartz and feldspar. The thermal stability of these defects in the age range investigated is a major prerequisite for accurate dating, while the accurate determination of the values of the trap depths and frequency factors play a major role in thermochronometry applications. </p><p>The correlation of kinetic parameters for diffusion has been very recently established for irradiated oxides (Kotomin et al. 2018). A correlation between the activation energy and the frequency factor that satisfied the Meyer–Neldel rule was reported when the thermal stability of [AlO<sub>4</sub>/h<sup>+</sup>]<sup>0</sup> and [TiO<sub>4</sub>/M<sup>+</sup>]<sup>0</sup> ESR signals in quartz was studied as function of dose (Benzid and Timar-Gabor 2020). Here we compiled the optically stimulated luminescence (OSL) data published so far in this regard, and investigated experimentally the thermal stability of OSL signals for doses ranging from 10 to 10000 Gy in sedimentary quartz samples. We report a linear relationship between the natural logarithm of the preexponent term (the frequency factor) and the activation energy E, corresponding to a Meyer-Neldel energy of 45 meV, and a deviation from first order kinetics in the high dose range accompanied by an apparent decrease in thermal stability. The implications of these observations and the atomic and physical mechanisms are currently studied.</p><p> </p><p><strong>References</strong></p><p>Benzid, K., Timar Gabor, A. 2020. The compensation effect (Meyer–Neldel rule) on [AlO<sub>4</sub>/h<sup>+</sup>]<sup>0</sup> and [TiO<sub>4</sub>/M<sup>+</sup>]<sup>0</sup> paramagnetic centers in irradiated sedimentary quartz. <em>AIP Advance</em>s 10, 075114.</p><p>Kotomin, E., Kuzovkov, V., Popov, A. I., Maier, J., and Vila, R. 2018. Anomalous kinetics of diffusion-controlled defect annealing in irradiated ionic solids. <em>J. Phys. Chem. A</em> 122(1), 28–32</p><p>Jones, A. G. (2014a), Compensation of the Meyer-Neldel Compensation Law for H diffusion in minerals, <em>Geochem. Geophys. Geosyst.</em>, 15, 2616–2631</p><p>Jones, A. G. (2014b), Reconciling different equations for proton conduction using the Meyer-Neldel compensation rule, <em>Geochem. Geophys. Geosyst</em>., 15, 337–349</p>

Properties and Effects of Hydrogen in GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
S.J. Pearton ◽  
H. Cho ◽  
F. Ren ◽  
J.-I. Chyi ◽  
J. Han ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Residual Hydrogen ◽  
Diffusion Characteristics ◽  
Significant Difference ◽  
Device Structures ◽  
The Status ◽  
The Difference ◽  
Thermal Stability Of

AbstractThe status of understanding of the behavior of hydrogen in GaN and related materials is reviewed. In particular, we discuss the amount of residual hydrogen in MOCVD-grown device structures such as heterojunction bipolar transistors, thyristors and p-i-n diodes intended for high power, high temperature applications. In these structures, the residual hydrogen originating from the growth precursors decorates Mgdoped layers and AlGaN/GaN interfaces. There is a significant difference in the diffusion characteristics and thermal stability of implanted hydrogen between n- and p-GaN, due to the stronger affinity of hydrogen to pair with acceptor dopants and possibly to the difference in H2 formation probability.

Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H2 treatment

2013 ◽  
Vol 579 ◽  
pp. 90-93
Author(s):  
Xin Cai ◽  
Hongwei Liang ◽  
Yuanda Liu ◽  
Rensheng Shen ◽  
Xiaochuan Xia ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Pressure ◽  
High Resistivity ◽  
Thermal Stability Of

The relative thermal stability of polymer model compounds

1962 ◽  
Vol 6 (19) ◽  
pp. 47-56 ◽  
Author(s):  
Desmond Sheehan ◽  
Alan P. Bentz ◽  
John C. Petropoulos
Keyword(s):  
Thermal Stability ◽  
Polymer Model ◽  
Model Compounds ◽  
Relative Thermal Stability ◽  
Thermal Stability Of
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