Internal Electric Field Caused by the Doping Concentration in the Emitter Layer in p$^+$-n-n$^+$ GaAs Solar Cells

2018 ◽  
Vol 68 (4) ◽  
pp. 381-386
Author(s):  
Mo Geun SO ◽  
Hyun-Jun JO ◽  
Young Hee MUN ◽  
Jong Su KIM* ◽  
Yeongho KIM ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Doping Concentration ◽  
Internal Electric Field ◽  
Emitter Layer

Effect of the double grading on the internal electric field and on the carrier collection in CIGS solar cells

2021 ◽  
Vol 223 ◽  
pp. 110948
Author(s):  
Alban Lafuente-Sampietro ◽  
Katsuhisa Yoshida ◽  
Shenghao Wang ◽  
Shogo Ishizuka ◽  
Hajime Shibata ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Internal Electric Field ◽  
Carrier Collection ◽  
Cigs Solar Cells

The Effects of Hydrogen Dilution on VOC in a-Si:H Pin Solar Cells

1997 ◽  
Vol 467 ◽  
Author(s):  
Qi Wang ◽  
Richard S. Crandall ◽  
Daxing Han
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Field Measurements ◽  
Internal Field ◽  
Open Circuit ◽  
Internal Electric Field ◽  
Hydrogen Dilution ◽  
Before And After ◽  
Rf Glow Discharge ◽  
Sun Light

ABSTRACTWe study the effects of hydrogen dilution on the open circuit voltage of a-Si:H pin solar cells fabricated by rf glow discharge growth. We keep the p and n layers the same and only vary the i layer properties. A normal a-Si:H i layer, an H-diluted i layer, and a thin H-diluted layer inserted between p and normal i layer are selected for this study. We measure the JV characteristics and the internal electric field distribution using a transient-null-current technique both in annealed and light soaked states. We find that hydrogen dilution does stabilize the Voc either in a bulk H-diluted i layer or in a thin layer between p and normal i layer after 100 hours AMI sun light soaking. From dark IV measurement, both H-diluted cells show little change in current at voltage near Voc before and after light soaking; while the normal a-Si:H cell does show a noticeable change. Also the internal field measurements find a stronger electric field starting from p and i interface for both H-diluted cells compared to the normal a-Si:H cell. Furthermore, there are no measurable changes in the field profiles after 100 hour AMI light-soaking for both H-diluted and normal a-Si cells. All these suggest that hydrogen dilution increases the field strength near p and i interface, which is the key that leads to a more stable Voc of H-diluted cells.

scholarly journals Internal electric field and fill factor of amorphous silicon solar cells

2010 ◽  
Author(s):  
Michael Stuckelberger ◽  
Arvind Shah ◽  
Janez Krc ◽  
Matthieu Despeisse ◽  
Fanny Meillaud ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Fill Factor ◽  
Silicon Solar Cells ◽  
Internal Electric Field

Internal Electric Field Profile in Thin Film Hydrogenated Amorphous Silicon Diodes Studied by the Transient-Null-Current Method

1997 ◽  
Vol 467 ◽  
Author(s):  
Daxing Han ◽  
Chenan Yeh ◽  
Keda Wang ◽  
Qiwang
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Space Charge ◽  
Forward Bias ◽  
Current Method ◽  
Internal Field ◽  
Total Charge ◽  
Internal Electric Field ◽  
Field Profile ◽  
Electric Field Profile

ABSTRACTWe demonstrate that the internal field of a thin a-Si:H pin solar cells can be measured using the transient-null-current method. This method was previously developed to measure the internal field profile in a-Si alloy Schottky barrier. The internal electric field profile was determined by measuring the forward-bias voltages that tune the transient photocurrents generated by a pulsed laser at a various wavelengths to zero. We adopt the same technique to a-Si:H p-i-n solar cells. In the case of p-i-n structure, we need to consider both space charge contributed by photogenerated carriers and carrier recombination which disturb the internal field. We use two critical conditions to minimize these effects. (1) To limit the contribution of photocarriers to space-charge distribution, the total charge collected is less than 10−10 C per pulse, and a repetition rate 1 Hz is used to ensure that the diode remains close to its equilibrium state. (2) The measuring time window is about 1 – 6 μs following the displacement current. Typically the RC constant of diode is < 1 μs and the rise time of the forward-bias recombination current is 6.0 × μs. We apply the signal average to process the forward-bias voltage. The error is within ± 0.05 V. With this technique we can study the effect of variety of structure design or processing on the device performance.

An Investigation into Electric Field-Modulated Photoluminescence of Perovskite solar cells

MRS Advances ◽  
2017 ◽  
Vol 2 (53) ◽  
pp. 3099-3104
Author(s):  
Zhihua Xu
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Perovskite Solar Cells ◽  
Internal Electric Field ◽  
Ion Migration ◽  
Migration Mechanism ◽  
Halide Perovskites ◽  
Mobile Ions ◽  
Voltage Scanning

ABSTRACTElectric field-modulated photoluminescence (PL) of perovskite solar cells is investigated to gain deeper insight about the role of the mobile ions in organometal halide perovskites. The PL intensity of perovskite solar cells show significant dependence on the polarity of the external electric field and the voltage scanning direction. This phenomenon is discussed in the framework of an ion migration mechanism, which has been widely accounted for the current density-voltage (J-V) hysteresis in perovskite solar cells. The result suggests that the mobile ions not only change the internal electric field of perovskite solar cells, but also have an effect on the recombination of photogenerated charge carriers.

scholarly journals Evaluation of Active Layer Thickness Influence in Long-Term Stability and Degradation Mechanisms in CsFAPbIBr Perovskite Solar Cells

2021 ◽  
Vol 11 (24) ◽  
pp. 11668
Author(s):  
Mari Carmen López-González ◽  
Gonzalo del Pozo ◽  
Diego Martín-Martín ◽  
Laura Muñoz-Díaz ◽  
José Carlos Pérez-Martínez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Layer Thickness ◽  
Active Layer ◽  
Perovskite Solar Cells ◽  
Low Frequency ◽  
Strong Increase ◽  
Active Layer Thickness ◽  
Internal Electric Field ◽  
Ion Density

Perovskite solar cells (PSCs) have become very popular due to the high efficiencies achieved. Nevertheless, one of the main challenges for their commercialization is to solve their instability issues. A thorough understanding of the processes taking place in the device is key for the development of this technology. Herein, J-V measurements have been performed to characterize PSCs with different active layer thicknesses. The solar cells’ parameters in pristine devices show no significant dependence on the active layer thickness. However, the evolution of the solar cells’ efficiency under ISOS-L1 protocol reveals a dramatic burn-in degradation, more pronounced for thicker devices. Samples were also characterized using impedance spectroscopy (IS) at different degradation stages, and data were fitted to a three RC/RCPE circuit. The low frequency capacitance in the thickest samples suffers a strong increase with time, which suggests a significant growth in the mobile ion population. This increase in the ion density partially screens the electric field, which yields a reduction in the extracted current and, consequently, the efficiency. This paper has been validated with two-dimensional numerical simulations that corroborate (i) the decrease in the internal electric field in dark conditions in 650 nm devices, and (ii) the consequent reduction in the carrier drift and, therefore, of the effective current extraction and efficiency.

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