Porous Silicon Organic Vapor Sensor Based on the Color-difference Image Technique

2010 ◽  
Vol 60 (6) ◽  
pp. 599-606
Author(s):  
Dong Woo SEO ◽  
Young You KIM ◽  
Ki Won LEE*
Keyword(s):  
Porous Silicon ◽  
Color Difference ◽  
Difference Image ◽  
Organic Vapor ◽  
Image Technique ◽  
Vapor Sensor

Porous silicon organic vapor sensor

2006 ◽  
Vol 29 (1) ◽  
pp. 51-55 ◽  
Author(s):  
G. García Salgado ◽  
T. Díaz Becerril ◽  
H. Juárez Santiesteban ◽  
E. Rosendo Andrés
Keyword(s):  
Porous Silicon ◽  
Organic Vapor ◽  
Vapor Sensor

Organic vapor sensor using photoluminescence of laser ablated gold nanoparticles on porous silicon

Optik ◽  
2017 ◽  
Vol 144 ◽  
pp. 546-552 ◽  
Author(s):  
Uday Muhsin Nayef ◽  
Intisar Mohammed Khudhair ◽  
Ersin Kayahan
Keyword(s):  
Gold Nanoparticles ◽  
Porous Silicon ◽  
Organic Vapor ◽  
Vapor Sensor

Development of an organic vapor sensor based on functionalized porous silicon

2011 ◽  
Vol 208 (6) ◽  
pp. 1458-1461 ◽  
Author(s):  
J. P. Badilla ◽  
D. C. Rojas ◽  
V. López ◽  
B. D. Fahlman ◽  
A. Ramírez-Porras
Keyword(s):  
Porous Silicon ◽  
Organic Vapor ◽  
Vapor Sensor

scholarly journals A Novel Chemical Gas Vapor Sensor Based on Photoluminescence Enhancement of Rugate Porous Silicon Filters

Sensors ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 2722
Author(s):  
Zicheng Zhou ◽  
Honglae Sohn
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Photoluminescence Intensity ◽  
Organic Vapors ◽  
Organic Vapor ◽  
Vapor Sensing ◽  
Enhanced Photoluminescence ◽  
Vapor Sensor ◽  
Rugate Filter ◽  
Pl Quenching

In this study, an innovative rugate filter configuration porous silicon (PSi) with enhanced photoluminescence intensity was fabricated. The fabricated PSi exhibited dual optical properties with both sharp optical reflectivity and sharp photoluminescence (PL), and it was developed for use in organic vapor sensing. When the wavelength of the resonance peak from the rugate PSi filters is engineered to overlap with the emission band of the PL from the PSi quantum dots, the PL intensity is amplified, thus reducing the full width at half maximum (FWHM) of the PL band from 154 nm to 22 nm. The rugate PSi filters samples were fabricated by electrochemical etching of highly doped n-type silicon under illumination. The etching solution consisted of a 1:1 volume mixture of 48% hydrofluoric acid and absolute ethanol and photoluminescent rugate PSi filter was fabricated by etching while using a periodic sinusoidal wave current with 10 cycles. The obtained samples were characterized by scanning electron microscopy (SEM), and both reflection redshift and PL quenching were measured under exposure to organic vapors. The reflection redshift and PL quenching were both affected by the vapor pressure and dipole moment of the organic species.

Computerized detection of intracranial aneurysms for three-dimensional MR angiography: Feature extraction of small protrusions based on a shape-based difference image technique

2006 ◽  
Vol 33 (2) ◽  
pp. 394-401 ◽  
Author(s):  
Hidetaka Arimura ◽  
Qiang Li ◽  
Yukunori Korogi ◽  
Toshinori Hirai ◽  
Shigehiko Katsuragawa ◽  
...  
Keyword(s):  
Feature Extraction ◽  
Intracranial Aneurysms ◽  
Mr Angiography ◽  
Three Dimensional ◽  
Difference Image ◽  
Image Technique

Porous Silicon Organic Vapor and Humidity Sensor

1996 ◽  
Vol 459 ◽  
Author(s):  
M. C. Poon ◽  
J.K.O. Sin ◽  
H. Wong ◽  
P. G. Han ◽  
W. H. Kwok ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Response Time ◽  
Schottky Diode ◽  
Room Temperature ◽  
Humidity Sensor ◽  
Ethanol Vapor ◽  
Electrical Contacts ◽  
Diode Structure ◽  
Organic Vapor ◽  
Humidity Change

ABSTRACTThis paper presents new organic vapor sensitive device using anodized porous silicon (PS). The sensor has aluminum (Al)/PS/p-Si/Al Schottky diode structure and sensitivity at room temperature in 2600 ppm acetone, methanol, 2-propanol and ethanol is about 4, 5, 10 and 40 times respectively. The sensitivity in 800–2600 ppm ethanol vapor is 2 to 40 times. The diode sensor can be converted into an Al/PS/Al resistor sensor by switching the electrical contacts, and the sensitivity is about 500 times for a humidity change of 43–75%. All sensors have response time of about 0.5 min. The sensitivity is stable with time and the PS sensor can be integrated into VLSI Si devices to form novel microelectronic systems.

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