Electrical Characterization of Porous Silicon Vapor Sensor with Metal Contacts on Silicon

2006 ◽  
Vol 4 (4) ◽  
pp. 440-445
Author(s):  
T. Islam ◽  
H. Saha
Keyword(s):  
Porous Silicon ◽  
Electrical Characterization ◽  
Metal Contacts ◽  
Silicon Vapor ◽  
Vapor Sensor

scholarly journals A flexible platform for controlled optical and electrical effects in tailored plasmonic break junctions

Nanophotonics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 1391-1400
Author(s):  
Florian Laible ◽  
Kai Braun ◽  
Otto Hauler ◽  
Martin Eberle ◽  
Dieter P. Kern ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Tunneling Current ◽  
Plasmonic Nanostructures ◽  
Break Junction ◽  
Metal Contacts ◽  
Break Junctions ◽  
Constant Bias ◽  
Confocal Scanning ◽  
Atomic Point Contacts

AbstractMechanically controllable break junctions are one suitable approach to generate atomic point contacts and ultrasmall and controllable gaps between two metal contacts. For constant bias voltages, the tunneling current can be used as a ruler to evaluate the distance between the contacts in the sub-1-nm regime and with sub-Å precision. This ruler can be used to measure the distance between two plasmonic nanostructures located at the designated breaking point of the break junction. In this work, an experimental setup together with suitable nanofabricated break junctions is developed that enables us to perform simultaneous gap-dependent optical and electrical characterization of coupled plasmonic particles, more specifically bowtie antennas in the highly interesting gap range from few nanometers down to zero gap width. The plasmonic break junction experiment is performed in the focus of a confocal microscope. Confocal scanning images and current measurements are simultaneously recorded and exhibit an increased current when the laser is focused in the proximity of the junction. This setup offers a flexible platform for further correlated optoelectronic investigations of coupled antennas or junctions bridged by nanomaterials.

Structural, optical and electrical characterization of porous silicon prepared on thin silicon epitaxial layer

2009 ◽  
Vol 924-926 ◽  
pp. 285-290 ◽  
Author(s):  
M. Balarin ◽  
O. Gamulin ◽  
M. Ivanda ◽  
M. Kosović ◽  
D. Ristić ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Epitaxial Layer ◽  
Electrical Characterization ◽  
Silicon Epitaxial Layer ◽  
Thin Silicon
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