Porous Silicon Organic Vapor and Humidity Sensor

1996 ◽  
Vol 459 ◽  
Author(s):  
M. C. Poon ◽  
J.K.O. Sin ◽  
H. Wong ◽  
P. G. Han ◽  
W. H. Kwok ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Response Time ◽  
Schottky Diode ◽  
Room Temperature ◽  
Humidity Sensor ◽  
Ethanol Vapor ◽  
Electrical Contacts ◽  
Diode Structure ◽  
Organic Vapor ◽  
Humidity Change

ABSTRACTThis paper presents new organic vapor sensitive device using anodized porous silicon (PS). The sensor has aluminum (Al)/PS/p-Si/Al Schottky diode structure and sensitivity at room temperature in 2600 ppm acetone, methanol, 2-propanol and ethanol is about 4, 5, 10 and 40 times respectively. The sensitivity in 800–2600 ppm ethanol vapor is 2 to 40 times. The diode sensor can be converted into an Al/PS/Al resistor sensor by switching the electrical contacts, and the sensitivity is about 500 times for a humidity change of 43–75%. All sensors have response time of about 0.5 min. The sensitivity is stable with time and the PS sensor can be integrated into VLSI Si devices to form novel microelectronic systems.

Fast Photoluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
V. Petrova-Koch ◽  
T. Muschik ◽  
D. I. Kovalev ◽  
F. Koch ◽  
V. Lehmann
Keyword(s):  
Porous Silicon ◽  
Response Time ◽  
Spectral Range ◽  
Luminescence Band ◽  
Room Temperature ◽  
Internal Surface ◽  
Porous Si ◽  
Time Resolved ◽  
Processed Material ◽  
Defect Luminescence

ABSTRACTTime-resolved studies of the visible photoluminescence in porous silicon with three different coverages of the internal surface are reported. We use aged, naturally oxidized porous Si (oxihydride), rapid thermal processed material (oxide) and samples stored in HF (pure hydride). A new, fast luminescence band in the blue-green spectral range and with response time less than 100 ns is observed at room temperature in each of the samples, although with different intensities. The observations prove that this is not an oxide-defect luminescence. We speculate on mechanisms for the origin of the fast luminescence in nanometer-size crystallites of Si.

Room temperature H2 detection based on Pd/SiNWs/p-Si Schottky diode structure

2016 ◽  
Vol 227 ◽  
pp. 515-523 ◽  
Author(s):  
L.S. Zhu ◽  
J. Zhang ◽  
X.W. Xu ◽  
Y.Z. Yu ◽  
X. Wu ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Diode Structure

Drift Mobility Measurements in Porous Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
L. Tsybeskov ◽  
C. Peng ◽  
P. M. Fauchet ◽  
Q. Gu ◽  
E. A. Schiff
Keyword(s):  
Porous Silicon ◽  
Response Time ◽  
Room Temperature ◽  
Forward Bias ◽  
Drift Mobility ◽  
Maximum Response ◽  
Forward Bias Voltage ◽  
Maximum Response Time ◽  
Temperature Time ◽  
Applied Forward Bias

AbstractModulated electroluminescence (EL) measurements performed on a series of porous silicon (PSi) diodes are presented. The maximum response time of the devices scales with the square of the PSi layer thickness and inversely with the applied forward bias voltage. These scaling results indicate that the maximum response time is a carrier transit time from which a drift mobility μ of 10−4 cm2/Vs is deduced at room temperature. Time-of-flight transport measurements on PSi are in qualitative agreement with this value for μ in addition, they identify μ as the electron mobility and show that transport is dispersive, in contrast to the interpretation of the modulated EL experiments.

Testing of porous silicon membranes as a novel humidity sensor

2000 ◽  
Vol 638 ◽  
Author(s):  
L. Quercia ◽  
M. Della Noce ◽  
V. La Ferrara ◽  
G. Di Francia
Keyword(s):  
Thin Film ◽  
Porous Silicon ◽  
Gas Sensor ◽  
Humidity Sensor ◽  
Electrical Contacts ◽  
Vacuum Evaporation ◽  
Fabrication Process ◽  
Silicon Membrane ◽  
Simple Process ◽  
Sensor Device

AbstractA new gas sensor device based on a porous silicon membrane has been fabricated. The sensible membrane has been bonded to a 1 cm2 Al2O3 substrate [1], where electrical contacts have been previously deposited by vacuum evaporation. In this work we present the results of DC measurements showing a good response of this device to humidity gradients. In this frame, the most striking properties of our device are its selectivity and a fast and full recovery after exposure to humidity levels up to 90%. Moreover, the new fabrication process used to realize the sensor merges the advantages typical of porous silicon with thin film ones, by means of a simple process.

scholarly journals A fast response, self-powered and room temperature near infrared-terahertz photodetector based on a MAPbI3/PEDOT:PSS composite

2020 ◽  
Vol 8 (35) ◽  
pp. 12148-12154 ◽  
Author(s):  
Yifan Li ◽  
Yating Zhang ◽  
Tengteng Li ◽  
Xin Tang ◽  
Mengyao Li ◽  
...  
Keyword(s):  
Response Time ◽  
Room Temperature ◽  
Near Infrared ◽  
Fast Response ◽  
Rapid Response ◽  
Self Powered

A novel self-powered NIR and THz PTE PD based on a (MAPbI3/PEDOT:PSS) composite with a rapid response time of 28 μs.

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

Room-temperature electroluminescence from erbium-doped porous silicon

1999 ◽  
Vol 75 (25) ◽  
pp. 3989-3991 ◽  
Author(s):  
Herman A. Lopez ◽  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Erbium Doped

Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 23 (12) ◽  
pp. 774-776 ◽  
Author(s):  
A B Krysa ◽  
D G Revin ◽  
J P Commin ◽  
C N Atkins ◽  
K Kennedy ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Room Temperature ◽  
Quantum Cascade Lasers ◽  
Vapor Phase Epitaxy ◽  
Quantum Cascade ◽  
Organic Vapor ◽  
Metal Organic ◽  
Cascade Lasers
Sign in / Sign up

Export Citation Format

Share Document