scholarly journals Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers

2012 ◽  
Vol 20 (S1) ◽  
pp. A133 ◽  
Author(s):  
Yun-Yan Zhang ◽  
Guang-Han Fan ◽  
Yi-An Yin ◽  
Guang-Rui Yao
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Performance Enhancement ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
P Type

Inserting a AlN Electron Blocking Layer for InGaN/GaN Blue Light-Emitting Diodes

2020 ◽  
Vol 1014 ◽  
pp. 126-130
Author(s):  
Wan Sheng Zuo ◽  
Yin Xi Niu ◽  
Liu Yang ◽  
Xiu Zhen Chi ◽  
Jin Jin Liu ◽  
...  
Keyword(s):  
Blue Light ◽  
Barrier Layer ◽  
Light Emitting Diodes ◽  
Electrostatic Discharge ◽  
Blocking Layer ◽  
Optical Performance ◽  
Spreading Effect ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Wide Range

In this study, the advantages of the AlN electron blocking layer (EBL) for InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The LEDs with the AlN EBL exhibited better optical performance over a wide range of carrier concentration due to the suppression of electron overflow. Furthermore, the AlN EBL with a thicker last barrier layer was investigated. The thicker last barrier layer was used to enhance Electrostatic Discharge (ESD) characteristic by the better current spreading effect.

scholarly journals Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer

2013 ◽  
Vol 21 (10) ◽  
pp. 11698 ◽  
Author(s):  
Yong-Seok Choi ◽  
Jang-Won Kang ◽  
Byeong-Hyeok Kim ◽  
Dong-Keun Na ◽  
Sang-Jun Lee ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
P Type
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