Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

2014 ◽  
Vol 65 (3) ◽  
pp. 362-367 ◽  
Author(s):  
Yu Jin Jung ◽  
W. K. Kim ◽  
Jae Hak Jung
Keyword(s):  
Single Crystal ◽  
Oxygen Concentration ◽  
Process Design ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Grown Single Crystal

Two-Dimensionally Grown Single-Crystal Silicon Nanosheets with Tunable Visible-Light Emissions

ACS Nano ◽  
2014 ◽  
Vol 8 (7) ◽  
pp. 6556-6562 ◽  
Author(s):  
Sung Wook Kim ◽  
Jaejun Lee ◽  
Ji Ho Sung ◽  
Dong-jae Seo ◽  
Ilsoo Kim ◽  
...  
Keyword(s):  
Visible Light ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Grown Single Crystal

Buried Oxide in Silicon by Oxygen Implantation Into Scanned Wafers

1985 ◽  
Vol 45 ◽  
Author(s):  
A. Mogro-Campero ◽  
R.P. Love ◽  
N. Lewis ◽  
E.L. Hall ◽  
M.D. McConnell
Keyword(s):  
Single Crystal ◽  
Oxygen Concentration ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Temperature Cycling ◽  
Beam Scanning ◽  
Crystal Silicon ◽  
Auger Analysis ◽  
Oxygen Implantation ◽  
Buried Oxide

ABSTRACTA single crystal silicon layer on an insulator is a desirable structure for applications in electronics. One of the leading processes for achieving such a structure is the formation of a buried oxide layer in silicon by heavy dose oxygen implantation. Characteristics of this material have been reported for implantation by beam scanning. In this work we report on material prepared by wafer scanning at rates such that significant temperature cycling occurs during implantation, and we use TEM and Auger analysis to investigate the differences between these samples and others prepared by the conventional technique of beam scanning. For the implantation and annealing conditions used here, we find more oxygen in the top silicon layer in the case of wafer scanning, and the oxygen concentration increases after annealing at 1150°C for 2 hours, leading to a structure of precipitates throughout the single crystal top silicon layer. For beam scanning, the oxygen concentration decreases after annealing and achieves background levels near the surface, leading to a zone which is free of precipitates.

The Impact of Graphite Furnace Parts on Radial Impurity Distribution in Czochralski‐Grown Single‐Crystal Silicon

1998 ◽  
Vol 145 (2) ◽  
pp. 621-628 ◽  
Author(s):  
Damien Gilmore ◽  
Tadahisa Arahori ◽  
Makoto Ito ◽  
Hiroki Murakami ◽  
Shin‐ichro Miki
Keyword(s):  
Single Crystal ◽  
Graphite Furnace ◽  
Single Crystal Silicon ◽  
Impurity Distribution ◽  
Crystal Silicon ◽  
The Impact ◽  
Grown Single Crystal

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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