Two-Dimensionally Grown Single-Crystal Silicon Nanosheets with Tunable Visible-Light Emissions

ACS Nano ◽  
2014 ◽  
Vol 8 (7) ◽  
pp. 6556-6562 ◽  
Author(s):  
Sung Wook Kim ◽  
Jaejun Lee ◽  
Ji Ho Sung ◽  
Dong-jae Seo ◽  
Ilsoo Kim ◽  
...  
Keyword(s):  
Visible Light ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Grown Single Crystal

Visible Light Metasurfaces Based on Single-Crystal Silicon

ACS Photonics ◽  
2016 ◽  
Vol 3 (10) ◽  
pp. 1919-1925 ◽  
Author(s):  
David Sell ◽  
Jianji Yang ◽  
Sage Doshay ◽  
Kai Zhang ◽  
Jonathan A. Fan
Keyword(s):  
Visible Light ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

The Impact of Graphite Furnace Parts on Radial Impurity Distribution in Czochralski‐Grown Single‐Crystal Silicon

1998 ◽  
Vol 145 (2) ◽  
pp. 621-628 ◽  
Author(s):  
Damien Gilmore ◽  
Tadahisa Arahori ◽  
Makoto Ito ◽  
Hiroki Murakami ◽  
Shin‐ichro Miki
Keyword(s):  
Single Crystal ◽  
Graphite Furnace ◽  
Single Crystal Silicon ◽  
Impurity Distribution ◽  
Crystal Silicon ◽  
The Impact ◽  
Grown Single Crystal

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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