Changes of Carrier Density and Mobility in ALD-ZnO Thin Films after Nitrogen-ion Implantation

2011 ◽  
Vol 58 (4) ◽  
pp. 761-764 ◽  
Author(s):  
H. S. Kim ◽  
D. H. Lee ◽  
S. J. Noh
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Carrier Density ◽  
Zno Thin Films ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

Effects of nitrogen ion implantation on the thermal stability of tungsten thin films

1998 ◽  
Vol 16 (2) ◽  
pp. 477-481 ◽  
Author(s):  
Yong Tae Kim ◽  
Chul Soon Kwon ◽  
Dong Joon Kim ◽  
Jong-Wan Park ◽  
Chang Woo Lee
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Ion Implantation ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
Thermal Stability Of

Decrease in Work Function of Boron Ion-Implanted ZnO Thin Films

2007 ◽  
Vol 7 (11) ◽  
pp. 4021-4024 ◽  
Author(s):  
Gi-Seok Heo ◽  
Sang-Jin Hong ◽  
Jong-Woon Park ◽  
Bum-Ho Choi ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Work Function ◽  
Carrier Density ◽  
Carrier Mobility ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Visible Wavelength Range ◽  
Ion Implanted

We have fabricated boron ion-implanted ZnO thin films by ion implantation into sputtered ZnO thin films on a glass substrate. An investigation of the effects of ion doses and activation time on the electrical and optical properties of the films has been made. The electrical sheet resistance and resistivity of the implanted films are observed to increase with increasing rapid thermal annealing (RTA)time, while decreasing as the ion dose increases. Without any RTA process, the variation of the carrier density is insensitive to the ion dose. With the RTA process, however, the carrier density of the implanted films increases and approaches that of the un-implanted ZnO film as the ion dose increases. On the other hand, the carrier mobility is shown to decrease with increasing ion doses when no RTA process is applied. With the RTA process, however, there is almost no change in the mobility. We have achieved the optical transmittance as high as 87% within the visible wavelength range up to 800 nm. It is also demonstrated that the work function can be engineered by changing the ion dose during the ion implantation process. We have found that the work function decreases as the ion dose increases.

Effect of nitrogen ion implantation on the properties of cadmium telluride thin films

2019 ◽  
Author(s):  
Saloni Goyal ◽  
Suresh Panchal ◽  
Chetna Narula ◽  
R. P. Chauhan
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Cadmium Telluride ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

Investigations on nitrogen ion implantation effects in vacuum evaporated CdS thin films using Raman scattering and X-ray diffraction studies

2001 ◽  
Vol 304 (1-4) ◽  
pp. 175-180 ◽  
Author(s):  
K. Senthil ◽  
D. Mangalaraj ◽  
Sa.K. Narayandass ◽  
R. Kesavamoorthy ◽  
G.L.N. Reddy ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Raman Scattering ◽  
X Ray Diffraction ◽  
Nitrogen Ion Implantation ◽  
X Ray ◽  
Cds Thin Films ◽  
Nitrogen Ion

The effect of nitrogen ion implantation on the structural, optical and electrical properties of ZnSe thin films

2006 ◽  
Vol 21 (12) ◽  
pp. 1661-1667 ◽  
Author(s):  
S Venkatachalam ◽  
D Mangalaraj ◽  
Sa K Narayandass ◽  
R Kesavamoorthy ◽  
P Magudapathy ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Optical And Electrical Properties ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion ◽  
Znse Thin Films
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