Quantum Efficiency in Multi-quantum well InGaN/GaN Light-emittingDiodes with Electroluminescence Characteristics

2009 ◽  
Vol 55 (1) ◽  
pp. 271-274 ◽  
Author(s):  
OkHwan Cha ◽  
Cheol-Hoi Kim ◽  
JunSeok Lee ◽  
JongPil Jeong ◽  
JoongSeo Park ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multi Quantum Well

Quantum efficiency control of InGaN/GaN multi-quantum-well structures using Ag/SiO2 core-shell nanoparticles

2011 ◽  
Vol 99 (25) ◽  
pp. 251114 ◽  
Author(s):  
Lee-Woon Jang ◽  
Trilochan Sahoo ◽  
Dae-Woo Jeon ◽  
Myoung Kim ◽  
Ju-Won Jeon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Core Shell ◽  
Shell Nanoparticles ◽  
Quantum Well Structures ◽  
Efficiency Control ◽  
Core Shell Nanoparticles ◽  
Multi Quantum Well

scholarly journals Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness

RSC Advances ◽  
2020 ◽  
Vol 10 (68) ◽  
pp. 41443-41452
Author(s):  
Zhigang Jia ◽  
Xiaodong Hao ◽  
Taiping Lu ◽  
Hailiang Dong ◽  
Zhiwei Jia ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Hybrid Structure ◽  
High Density ◽  
Hybrid Structures ◽  
Barrier Thickness ◽  
Multi Quantum Well

High-density V-shaped pits cause that InGaN/GaN multi-quantum well becomes QD/QW hybrid structure, and the internal quantum efficiency of the hybrid structure is improved by increasing the thickness of GaN barrier.

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm

2007 ◽  
Vol 101 (3) ◽  
pp. 033516 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
G. R. Chabrol ◽  
N. P. Hylton ◽  
D. Zhu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

Sign in / Sign up

Export Citation Format

Share Document