Effect of Process Parameters on Plasma Equipment in a Cl2 Inductively Coupled Plasma

2009 ◽  
Vol 54 (3) ◽  
pp. 992-997
Author(s):  
Sanghee Kwon ◽  
Byungwhan Kim
Keyword(s):  
Process Parameters ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled

Effect of the process parameters of inductively coupled plasma reactive ion etching on the fabrication of diamond nanotips

2014 ◽  
Vol 211 (10) ◽  
pp. 2343-2346 ◽  
Author(s):  
Hasan-al Mehedi ◽  
Vianney Mille ◽  
Jocelyn Achard ◽  
Ovidiu Brinza ◽  
Alix Gicquel
Keyword(s):  
Process Parameters ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled

ICP Etching of 4H-SiC Substrates

2013 ◽  
Vol 740-742 ◽  
pp. 825-828 ◽  
Author(s):  
Jerome Biscarrat ◽  
Jean François Michaud ◽  
Emmanuel Collard ◽  
Daniel Alquier
Keyword(s):  
Process Parameters ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Effective Technique ◽  
Working Pressure ◽  
Inductively Coupled ◽  
Icp Etching ◽  
High Etch Rate ◽  
The Impact

Due to its inert chemical nature, plasma etching is the most effective technique to pattern SiC. In this paper, dry etching of 4H-SiC substrate in Inductively Coupled Plasma (ICP) has been studied in order to evaluate the impact of process parameters on the characteristics of etching such as etch rate and trenching effect. Key process parameters such as platen power and ICP coil power prove to be essential to control the SiC etch rate. On the other hand, the ICP coil power and the working pressure mainly master the trenching effect. Our results enlighten that high etch rate with minimal trenching effect can be obtained using high ICP coil power and low working pressure.

Inductively-Coupled Plasma Nitriding of Fused Silica

1986 ◽  
Vol 75 ◽  
Author(s):  
T. K. Vethanayagam ◽  
P. F. Johnson
Keyword(s):  
Surface Temperature ◽  
Nitrogen Content ◽  
Process Parameters ◽  
Inductively Coupled Plasma ◽  
Treatment Time ◽  
Plasma Nitriding ◽  
Hydrogen Plasma ◽  
Fused Silica ◽  
Rf Discharge ◽  
Inductively Coupled

AbstractPlasma nitriding of fused silica has been performed over a temperature range of 750°C to 1300°C in a nitrogen-hydrogen plasma generated by an inductively coupled RF discharge. The plasma is used as both thermal and chemical source. The effects of various process parameters such as surface temperature, gas pressure and treatment time on total nitrogen content have been studied. The advantages and the drawbacks of this direct plasma nitriding technique are briefly discussed.

Inductively Coupled Plasma Etching of Pt/Ti Electrodes in Cl-Based Plasma

2013 ◽  
Vol 721 ◽  
pp. 346-349
Author(s):  
Zhi Qin Zhong ◽  
Cheng Tao Yang ◽  
Guo Jun Zhang ◽  
Shu Ya Wang ◽  
Li Ping Dai
Keyword(s):  
Process Parameters ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Dry Etching ◽  
Rf Power ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
High Etch Rate ◽  
Ar Gas

Dry etching of Pt/Ti film was carried out using Cl2/Ar plasmas in an inductively coupled plasma (ICP) reactor. The influence of the various process parameters, such as RIE power, ICP power and Cl2/Ar gas mixing ratio, on the etch rate and selectivity of photoresist to Pt/Ti film were investigated systematically and optimized. It was revealed that the etch rate and the selectivity strongly depended on the key process parameters. The etch rate was found to increase dramatically with increasing of RIE power and ICP power. But by changing the ratio of Cl2 to the total gas, the maximum etch rate could be obtained at the proper ratio of 20%. The results also indicated too low or too high RIE power and the Cl2 ratio was detrimental to the selectivity. The optimized parameters of Pt/Ti dry etching for high etch rate and low selectivity of photoresist to Pt/Ti were obtained to be pressure: 10mT, RF power: 250W, ICP power: 0W, Cl2: 8sccm (standard cubic centimeters per minute), Ar: 32sccm.

Research on TSV Dry Etching Technology

2015 ◽  
Vol 645-646 ◽  
pp. 216-220
Author(s):  
Guo Qing Jiang ◽  
Lei Kuang ◽  
Jian Zhu
Keyword(s):  
Process Parameters ◽  
Inductively Coupled Plasma ◽  
New Technology ◽  
Dry Etching ◽  
Inductively Coupled

TSV is a new technology to make interconnections between chips by creating vertical wafer-to-wafer vias. The application of ICP ( inductively coupled plasma ) dry etching to make TSV is discussed in this paper. Starting with hardware conditions of the equipment, a large number of experiments were conducted to test the process parameters combining with the fundamentals of dry etching. By constantly modifying the parameters to optimize the process, a final result of TSV with the width of 2.62um, depth of 63.5um, verticality of 89.8°and scallop of 70.3nm was realized in this paper.

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