scholarly journals 3D Depth Profile Reconstruction of Segregated Impurities using Secondary Ion Mass Spectrometry

10.3791/61065 ◽  
2020 ◽  
Author(s):  
Paweł Piotr Michałowski ◽  
Sebastian Zlotnik ◽  
Iwona Jóźwik ◽  
Adrianna Chamryga ◽  
Mariusz Rudziński
Keyword(s):  
Mass Spectrometry ◽  
Depth Profile ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
Profile Reconstruction ◽  
Secondary Ion

scholarly journals Dating of Obsidian Tools by Water Diffusion (SIMS-SS) with a Novel Software

2020 ◽  
Vol 13 ◽  
pp. 234
Author(s):  
I. Liritzis ◽  
T. Ganetsos ◽  
N. Laskaris
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Process ◽  
Depth Profile ◽  
Secondary Ion Mass Spectrometry ◽  
Environmental Water ◽  
Water Diffusion ◽  
Asia Minor ◽  
One Dimensional ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Diffusion of environmental water into the surface of obsidian tools of archaeological origin is monitored by secondary ion mass spectrometry (SIMS), which provides a H+ concentration (C) versus hydration depth profile. The modeling of this diffusion process, as one-dimensional phenomena, is based on the idea that a saturated surface (SS) layer is encountered near the surface. A novel software program has been developed, using MATLAB, incorporating all numerical parameters for the dating of hydrated obsidians using the SIMS profile. This approach has been applied to several archaeological obsidians from the Aegean, Hungary, and Asia Minor and compared with samples from radiocarbon dated cultural phases where the agreement is excellent.

Analysis of Implanted Boron Profiles Across the Si-SiO2 Interface by Secondary Ion Mass Spectrometry.

1983 ◽  
Vol 25 ◽  
Author(s):  
V. R. Deline ◽  
N. M. Johnson ◽  
L. A. Christel
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Model Calculations ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Profile Reconstruction ◽  
Secondary Ion

ABSTRACTDepth profiles of boron implanted across the SiO2-Si interface have been measured by secondary ion mass spectrometry and compared with model calculations of the impurity distributions. Analysis of the sputtering and ion yield processes near the interface are used to reconstruct the measured boron profile for comparison with the model calculations. Applicability of the method of profile reconstruction near the interface to other materials and impurities is discussed.

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