Analysis of Implanted Boron Profiles Across the Si-SiO2 Interface by Secondary Ion Mass Spectrometry.

1983 ◽  
Vol 25 ◽  
Author(s):  
V. R. Deline ◽  
N. M. Johnson ◽  
L. A. Christel
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Model Calculations ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Profile Reconstruction ◽  
Secondary Ion

ABSTRACTDepth profiles of boron implanted across the SiO2-Si interface have been measured by secondary ion mass spectrometry and compared with model calculations of the impurity distributions. Analysis of the sputtering and ion yield processes near the interface are used to reconstruct the measured boron profile for comparison with the model calculations. Applicability of the method of profile reconstruction near the interface to other materials and impurities is discussed.

Effects of Cryogenic Sample Analysis on Molecular Depth Profiles with TOF-Secondary Ion Mass Spectrometry

2010 ◽  
Vol 82 (19) ◽  
pp. 8291-8299 ◽  
Author(s):  
Alan M. Piwowar ◽  
John S. Fletcher ◽  
Jeanette Kordys ◽  
Nicholas P. Lockyer ◽  
Nicholas Winograd ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Analysis ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

scholarly journals 3D Depth Profile Reconstruction of Segregated Impurities using Secondary Ion Mass Spectrometry

10.3791/61065 ◽  
2020 ◽  
Author(s):  
Paweł Piotr Michałowski ◽  
Sebastian Zlotnik ◽  
Iwona Jóźwik ◽  
Adrianna Chamryga ◽  
Mariusz Rudziński
Keyword(s):  
Mass Spectrometry ◽  
Depth Profile ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Mass Spectrometry ◽  
Profile Reconstruction ◽  
Secondary Ion

Quantitation of Secondary Ion Mass Spectrometry (SIMS) for HgCdTe.

1983 ◽  
Vol 25 ◽  
Author(s):  
Lawrence E. Lapides ◽  
George L. Whiteman ◽  
Robert G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Ionization Potential ◽  
Electron Affinity ◽  
Secondary Ion Mass Spectrometry ◽  
Relative Sensitivity ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

ABSTRACTQuantitative depth profiles of impurities in LPE layers of HgCdTe have been determined using relative sensitivity factors calculated from ion implantation profiles. Standards were provided for Li, Be, B, C, F, Na, Mg, Al, Si, P, S, Cl, Cu, Ga, As, Br, and In. Relative sensitivity factors as a function of ionization potential for O2+ primary ion SIMS and electron affinity for Cs+ primary ion SIMS have been calculated in order to extend quantitation to elements not yet implanted. Examples of depth profiles for implant standards and unimplanted layers are given.

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