The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

10.3791/60798 ◽  
2020 ◽  
Author(s):  
Tiago C. Gomes ◽  
Dinesh Kumar ◽  
Neri Alves ◽  
Jeff Kettle ◽  
Lucas Fugikawa-Santos
Keyword(s):  
Thin Film ◽  
Aluminum Oxide ◽  
Dielectric Layer ◽  
Thin Film Transistors

A novel functional polyurethane as a dielectric layer for organic thin-film transistors

2018 ◽  
Vol 42 (13) ◽  
pp. 10969-10975
Author(s):  
Xuesong Wang ◽  
He Wang ◽  
Yao Li ◽  
Ting Xu ◽  
Wei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
High Dielectric Constant ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
High Dielectric

A polyurethane material with a high dielectric constant was used to regulate the grain size of p-6P.

scholarly journals Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis

2019 ◽  
Vol 21 (5) ◽  
pp. 370-379 ◽  
Author(s):  
Tiago C. Gomes ◽  
Dinesh Kumar ◽  
Lucas Fugikawa-Santos ◽  
Neri Alves ◽  
Jeff Kettle
Keyword(s):  
Thin Film ◽  
Multivariate Analysis ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Zno Thin Film

scholarly journals High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

2013 ◽  
Vol 103 (3) ◽  
pp. 033518 ◽  
Author(s):  
Pradipta K. Nayak ◽  
M. N. Hedhili ◽  
Dongkyu Cha ◽  
H. N. Alshareef
Keyword(s):  
Thin Film ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
High Performance

SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors

MRS Advances ◽  
2018 ◽  
Vol 3 (49) ◽  
pp. 2931-2936
Author(s):  
G. Kitahara ◽  
K. Aoshima ◽  
J. Tsutsumi ◽  
H. Minemawari ◽  
S. Arai ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Base Layer ◽  
Organic Thin Film ◽  
Low Voltage Operation ◽  
Silver Electrodes

ABSTRACTRecently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.

scholarly journals Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 425 ◽  
Author(s):  
Siting Chen ◽  
Yuzhi Li ◽  
Yilong Lin ◽  
Penghui He ◽  
Teng Long ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Acid Resistance ◽  
Semiconductor Layer ◽  
Sn Doping ◽  
First Time

Inkjet-printed top-gate metal oxide (MO) thin-film transistors (TFTs) with InGaSnO semiconductor layer and carbon-free aqueous gate dielectric ink are demonstrated. It is found that the InGaO semiconductor layer without Sn doping is seriously damaged after printing aqueous gate dielectric ink onto it. By doping Sn into InGaO, the acid resistance is enhanced. As a result, the printed InGaSnO semiconductor layer is almost not affected during printing the following gate dielectric layer. The TFTs based on the InGaSnO semiconductor layer exhibit higher mobility, less hysteresis, and better stability compared to those based on InGaO semiconductor layer. To the best of our knowledge, it is for the first time to investigate the interface chemical corrosivity of inkjet-printed MO-TFTs. It paves a way to overcome the solvent etching problems for the printed TFTs.

A robust ionic liquid–polymer gate insulator for high-performance flexible thin film transistors

2015 ◽  
Vol 3 (17) ◽  
pp. 4239-4243 ◽  
Author(s):  
Jieun Ko ◽  
Su Jeong Lee ◽  
Kyongjun Kim ◽  
EungKyu Lee ◽  
Keon-Hee Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Ionic Liquid ◽  
Mechanical Strength ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
High Performance ◽  
Chemical Interaction ◽  
Gate Insulator ◽  
Liquid Polymer ◽  
Ionic Liquid Polymer

An ionic liquid–polymer (IL–PVP) dielectric layer with robust mechanical strength and flexibility was fabricated by a chemical interaction between the ionic liquid and polymer. This dielectric layer allowed operation of flexible thin film transistors with high performance.

Sign in / Sign up

Export Citation Format

Share Document