A novel functional polyurethane as a dielectric layer for organic thin-film transistors

2018 ◽  
Vol 42 (13) ◽  
pp. 10969-10975
Author(s):  
Xuesong Wang ◽  
He Wang ◽  
Yao Li ◽  
Ting Xu ◽  
Wei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
High Dielectric Constant ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
High Dielectric

A polyurethane material with a high dielectric constant was used to regulate the grain size of p-6P.

Organic Thin-Film Transistors on a Plastic Substrate with Anodically Oxidized High-Dielectric-Constant Insulators

2003 ◽  
Vol 42 (Part 1, No. 1) ◽  
pp. 299-304 ◽  
Author(s):  
Yoshiki Iino ◽  
Youji Inoue ◽  
Yoshihide Fujisaki ◽  
Hideo Fujikake ◽  
Hiroto Sato ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Thin Film Transistors ◽  
High Dielectric Constant ◽  
Organic Thin Film Transistors ◽  
Plastic Substrate ◽  
Organic Thin Film ◽  
High Dielectric

SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors

MRS Advances ◽  
2018 ◽  
Vol 3 (49) ◽  
pp. 2931-2936
Author(s):  
G. Kitahara ◽  
K. Aoshima ◽  
J. Tsutsumi ◽  
H. Minemawari ◽  
S. Arai ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Base Layer ◽  
Organic Thin Film ◽  
Low Voltage Operation ◽  
Silver Electrodes

ABSTRACTRecently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.

Tunable dielectric constant of polyimide–barium titanate nanocomposite materials as the gate dielectrics for organic thin film transistor applications

RSC Advances ◽  
2014 ◽  
Vol 4 (107) ◽  
pp. 62132-62139 ◽  
Author(s):  
Yang-Yen Yu ◽  
Cheng-Liang Liu ◽  
Yung-Chih Chen ◽  
Yu-Cheng Chiu ◽  
Wen-Chang Chen
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Nanocomposite Materials ◽  
Organic Thin Film Transistors ◽  
Hybrid Nanocomposite ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Polyimide (PI)–BaTiO3 (BT) NPs hybrid nanocomposite dielectrics with tunable BT loadings (X) were fabricated for investigating their properties on the pentacene organic thin film transistors (OTFTs).

Photo-Curable Sol-Gel Hybrid Film as a Dielectric Layer by a Thiol-ene Reaction in Air or N2 for Organic Thin Film Transistors

2012 ◽  
Vol 15 (5) ◽  
pp. G13 ◽  
Author(s):  
Joon-Soo Kim ◽  
Seungwon Lee ◽  
Young Hwan Hwang ◽  
Yongho Kim ◽  
Seunghyup Yoo ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Hybrid Film ◽  
Sol Gel ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Ene Reaction
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