Manufacture of low-g micro inertial switch utilizing SOI with double buried layers

2012 ◽  
Vol 20 (5) ◽  
pp. 1076-1083
Author(s):  
王超 WANG Chao ◽  
吴嘉丽 WU Jia-li ◽  
陈光焱 CHEN Guang-yan
Keyword(s):  
Inertial Switch ◽  
Buried Layers

TEM study of Cosi2 formation via annealing of Co-Ti bilayers on Si

1995 ◽  
Vol 53 ◽  
pp. 464-465
Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier
Keyword(s):  
Thermal Instability ◽  
Lattice Mismatch ◽  
Field Effect Transistors ◽  
Contact Layer ◽  
Interface Roughness ◽  
Oxide Semiconductor ◽  
Surface Layers ◽  
Silicide Layer ◽  
Small Lattice ◽  
Buried Layers

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.

A Wireless MEMS Inertial Switch for Measuring Both Threshold Triggering Acceleration and Response Time

2014 ◽  
Vol 63 (12) ◽  
pp. 3152-3161 ◽  
Author(s):  
Jian Zhao ◽  
Pengbo Liu ◽  
Zhenan Tang ◽  
Kefeng Fan ◽  
Xiaosong Ma ◽  
...  
Keyword(s):  
Response Time ◽  
Inertial Switch

Formation and control of boron buried layers in silicon using an excimer laser

1995 ◽  
Vol 16 (1) ◽  
pp. 14-16 ◽  
Author(s):  
G. Verma ◽  
A. Slaoui ◽  
S. Talwar ◽  
T.W. Sigmon
Keyword(s):  
Excimer Laser ◽  
Buried Layers ◽  
And Control

A Low-G Omnidirectional Mems Inertial Switch with Load Direction Identification

2021 ◽  
Author(s):  
Liqun Du ◽  
Yang Yu ◽  
Bowen Yuan ◽  
Bingjiang Guo ◽  
Chao Wang ◽  
...  
Keyword(s):  
Load Direction ◽  
Inertial Switch

A Laterally Driven MEMS Inertial Switch With Double-Layer Suspended Springs for Improving Single-Axis Sensitivity

2018 ◽  
Vol 8 (10) ◽  
pp. 1845-1854 ◽  
Author(s):  
Zhuoqing Yang ◽  
Jianhao Shi ◽  
Jinyuan Yao ◽  
Xiaojing Zhang ◽  
Guifu Ding ◽  
...  
Keyword(s):  
Double Layer ◽  
Inertial Switch

Formation and control of phosphorus buried layers in silicon using a pulsed XeCl excimer laser

1996 ◽  
Vol 69 (3) ◽  
pp. 319-321
Author(s):  
G. Verma ◽  
S. Talwar ◽  
T. W. Sigmon
Keyword(s):  
Excimer Laser ◽  
Buried Layers ◽  
And Control ◽  
Xecl Excimer Laser

Ion Implantation for Deep (> 100 μm) Buried Layers

2008 ◽  
pp. 77-77-19
Author(s):  
WR Fahrner ◽  
D Bräunig ◽  
M Knoll ◽  
JR Laschinski
Keyword(s):  
Ion Implantation ◽  
Buried Layers

A low-g omnidirectional MEMS inertial switch with load direction identification

2022 ◽  
Vol 253 ◽  
pp. 111679
Author(s):  
Liqun Du ◽  
Yang Yu ◽  
Bowen Yuan ◽  
Bingjiang Guo ◽  
Chao Wang ◽  
...  
Keyword(s):  
Load Direction ◽  
Inertial Switch
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