Formation and control of boron buried layers in silicon using an excimer laser

1995 ◽  
Vol 16 (1) ◽  
pp. 14-16 ◽  
Author(s):  
G. Verma ◽  
A. Slaoui ◽  
S. Talwar ◽  
T.W. Sigmon
Keyword(s):  
Excimer Laser ◽  
Buried Layers ◽  
And Control

Formation and control of phosphorus buried layers in silicon using a pulsed XeCl excimer laser

1996 ◽  
Vol 69 (3) ◽  
pp. 319-321
Author(s):  
G. Verma ◽  
S. Talwar ◽  
T. W. Sigmon
Keyword(s):  
Excimer Laser ◽  
Buried Layers ◽  
And Control ◽  
Xecl Excimer Laser

Process diagnostics and control for excimer laser processing

1995 ◽  
Author(s):  
Karsten Schutte ◽  
Emil Schubert ◽  
Hans W. Bergmann
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Diagnostics And Control ◽  
Process Diagnostics ◽  
And Control

Interfacial Structure and Evolution in Mesotaxial CoSi2/Si Heterostructure

1991 ◽  
Vol 238 ◽  
Author(s):  
S. R. Hull ◽  
Y. F. Hsieh ◽  
A. E. White ◽  
K. T. Short
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Interfacial Structure ◽  
High Temperature Annealing ◽  
Ripening Process ◽  
Si Substrates ◽  
Buried Layers ◽  
Precipitate Nucleation ◽  
And Control ◽  
First Time

ABSTRACTWe describe the evolution and microstructure of Si/CoSi2/Si (100) and (111) heterostructures formed by Co+ ion implantation into Si substrates (“mesotaxy”), followed by high temperature annealing. It is shown that the CoSi2 precipitate nucleation and ripening process, and eventual coalescence into buried layers, is controlled by interfacial structure and energetics. Understanding and control of these processes allows for the first time synthesis of otherwise almost identical CoSi2 buried layers with either twinned or untwinned CoSi2/Si(111) interfaces.

Excimer Laser Recrystallization of a-Si Employing Aluminum Masking Window

2000 ◽  
Vol 609 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Sang-Hoon Jung ◽  
Min-Koo Han
Keyword(s):  
Thermal Conductivity ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Recrystallization ◽  
Polycrystalline Silicon Films ◽  
And Control ◽  
Xecl Excimer Laser ◽  
High Reflectance ◽  
Lateral Heat

ABSTRACTA new excimer laser recrystallization method of amorphous silicon is proposed to increase the grain size and control the grain boundary locations in polycrystalline silicon films. The proposed method is based on the lateral grain growth which occurs at the interface between molten and unmolten regions. To obtain selectively molten regions, the proposed method employs aluminum patterns on amorphous silicon. The aluminum patterns act as the beam shield during the laser irradiation as well as the lateral heat sink during the solidification period. The high reflectance of aluminum at the wavelength of XeCl excimer laser offers stable beam shielding property, and the high thermal conductivity enhances the lateral heat flow by the quick draining of laterally propagated heat. TEM observation has revealed that the well arranged large grains were successfully obtained.

Control of Metal Alloy Oxidation with Electric Fields

1973 ◽  
Vol 31 ◽  
pp. 164-165
Author(s):  
R. R. Dils ◽  
P. S. Follansbee
Keyword(s):  
Electric Fields ◽  
Oxidation Process ◽  
Base Alloy ◽  
Oxide Surface ◽  
Platinum Electrodes ◽  
Insulating Layer ◽  
Iron Base Alloy ◽  
Alloy Oxidation ◽  
Aluminum Oxide Layer ◽  
And Control

Electric fields have been applied across oxides growing on a high temperature alloy and control of the oxidation of the material has been demonstrated. At present, three-fold increases in the oxidation rate have been measured in accelerating fields and the oxidation process has been completely stopped in a retarding field.The experiments have been conducted with an iron-base alloy, Pe 25Cr 5A1 0.1Y, although, in principle, any alloy capable of forming an adherent aluminum oxide layer during oxidation can be used. A specimen is polished and oxidized to produce a thin, uniform insulating layer on one surface. Three platinum electrodes are sputtered on the oxide surface and the specimen is reoxidized.

Evidence for a Blood Ganglion Barrier in the Superior Cervical Ganglion of the Rat

1982 ◽  
Vol 40 ◽  
pp. 204-204
Author(s):  
D. M. DePace
Keyword(s):  
Blood Vessels ◽  
Superior Cervical Ganglion ◽  
Peripheral Nerves ◽  
Time Schedule ◽  
Transmission Electron ◽  
Cervical Ganglion ◽  
The Central Nervous System ◽  
Cervical Ganglia ◽  
Capillary Circulation ◽  
And Control

The majority of blood vessels in the superior cervical ganglion possess a continuous endothelium with tight junctions. These same features have been associated with the blood brain barrier of the central nervous system and peripheral nerves. These vessels may perform a barrier function between the capillary circulation and the superior cervical ganglion. The permeability of the blood vessels in the superior cervical ganglion of the rat was tested by intravenous injection of horseradish peroxidase (HRP). Three experimental groups of four animals each were given intravenous HRP (Sigma Type II) in a dosage of.08 to.15 mg/gm body weight in.5 ml of.85% saline. The animals were sacrificed at five, ten or 15 minutes following administration of the tracer. Superior cervical ganglia were quickly removed and fixed by immersion in 2.5% glutaraldehyde in Sorenson's.1M phosphate buffer, pH 7.4. Three control animals received,5ml of saline without HRP. These were sacrificed on the same time schedule. Tissues from experimental and control animals were reacted for peroxidase activity and then processed for routine transmission electron microscopy.

Effects of renovascular hypertension on rat adrenal zona glomerulosa

1978 ◽  
Vol 36 (2) ◽  
pp. 582-583
Author(s):  
G. Mazzocchi ◽  
P. Rebuffat ◽  
C. Robba ◽  
P. Vassanelli ◽  
G. G. Nussdorfer
Keyword(s):  
Renovascular Hypertension ◽  
Left Kidney ◽  
Renin Angiotensin System ◽  
Plasma Renin ◽  
Zona Glomerulosa ◽  
Ultrastructural Changes ◽  
Albino Rats ◽  
Left Renal Artery ◽  
Angiotensin System ◽  
And Control

It is well known that the rat adrenal zona glomerulosa steroidogenic activity is controlled by the renin-angiotensin system. The ultrastructural changes in the rat zona glomerulosa cells induced by renovascular hypertension were described previously, but as far as we are aware no correlated biochemical and morphometric investigations were performed.Twenty adult male albino rats were divided into 2 experimental groups. One group was subjected to restriction of blood flow to the left kidney by the application of a silver clip about the left renal artery. The other group was sham-operated and served as a control. Renovascular hypertension developed in about 10 days: sistolic blood pressure averaged 165 ± 6. 4 mmHg, whereas it was about 110 ± 3. 8 mmHg in the control animals. The hypertensive and control rats were sacrificed 20 days after the operation. The blood was collected and plasma renin activity was determined by radioimmunological methods. The aldosterone concentration was radioimmunologically assayed both in the plasma and in the homogenate of the left capsular adrenal gland.

X-Ray Replication of Submicrometer Linewidth Patterns

1977 ◽  
Vol 35 ◽  
pp. 136-137
Author(s):  
Henry I. Smith ◽  
D.C. Flanders
Keyword(s):  
Electron Beam Lithography ◽  
Cross Sectional ◽  
X Ray ◽  
Electron Backscattering ◽  
Spatial Frequencies ◽  
Cross Sectional Profile ◽  
Carbon Foils ◽  
Sectional Profile ◽  
And Control ◽  
Soft Radiation

Scanning electron beam lithography has been used for a number of years to write submicrometer linewidth patterns in radiation sensitive films (resist films) on substrates. On semi-infinite substrates, electron backscattering severely limits the exposure latitude and control of cross-sectional profile for patterns having fundamental spatial frequencies below about 4000 Å(l),Recently, STEM'S have been used to write patterns with linewidths below 100 Å. To avoid the detrimental effects of electron backscattering however, the substrates had to be carbon foils about 100 Å thick (2,3). X-ray lithography using the very soft radiation in the range 10 - 50 Å avoids the problem of backscattering and thus permits one to replicate on semi-infinite substrates patterns with linewidths of the order of 1000 Å and less, and in addition provides means for controlling cross-sectional profiles. X-radiation in the range 4-10 Å on the other hand is appropriate for replicating patterns in the linewidth range above about 3000 Å, and thus is most appropriate for microelectronic applications (4 - 6).

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