scholarly journals STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE Al/Al2O3/SiO2/n-Si METAL-OXIDE-SEMICONDUCTOR CAPACITOR

Author(s):  
Nakibinge Tawfiq Kimbugwe ◽  
Huseyin Karacali ◽  
Ercan Yilmaz
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...


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