Electrical Characteristics of Metal-Oxide-Semiconductor Capacitor with High-κ/Metal Gate Using Oxygen Scavenging Process

2016 ◽  
Vol 16 (5) ◽  
pp. 4897-4900
Author(s):  
Junil Lee ◽  
Jang Hyun Kim ◽  
Dae Woong Kwon ◽  
Euyhwan Park ◽  
Taehyung Park ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Metal Gate ◽  
Oxygen Scavenging ◽  
Metal Oxide Semiconductor Capacitor

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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