scholarly journals A Lossy Integrator with Active Bias Point

2021 ◽  
Author(s):  
Emad Alnasser ◽  
Dobromir Dobrev ◽  
Tatyana Neycheva
Keyword(s):  
Bias Point

A lossy integrator with active bias point<br>

Bias Point Shift in the TMR Sensor Under the Media Field

2016 ◽  
Vol 52 (7) ◽  
pp. 1-4 ◽  
Author(s):  
Veerakumar Venugopal ◽  
Guoguang Wu ◽  
Scott Stokes
Keyword(s):  
The Media ◽  
Bias Point

Stabilization of the bias point of an electro-optic modulator based on polymer material

2006 ◽  
Author(s):  
Chi Thanh Nguyên ◽  
André Clouqueur ◽  
Rolland Hierle ◽  
Bernard Journet ◽  
Patrick Labbé ◽  
...  
Keyword(s):  
Polymer Material ◽  
Electro Optic ◽  
Bias Point ◽  
Electro Optic Modulator

scholarly journals Optimum Bias Point in Broadband Subcarrier Multiplexing With Optical IQ Modulators

2015 ◽  
Vol 33 (1) ◽  
pp. 258-266 ◽  
Author(s):  
Fernando A. Gutierrez ◽  
Philip Perry ◽  
Frank Smyth ◽  
Andrew D. Ellis ◽  
Liam P. Barry
Keyword(s):  
Subcarrier Multiplexing ◽  
Bias Point

scholarly journals ZTC bias point of advanced fin based device: The importance and exploration

2015 ◽  
Vol 28 (3) ◽  
pp. 393-405 ◽  
Author(s):  
Sushanta Mohapatra ◽  
Kumar Pradhan ◽  
Prasanna Sahu
Keyword(s):  
Power Dissipation ◽  
Temperature Compensation ◽  
Performance Metrics ◽  
Zero Temperature ◽  
Sweet Spot ◽  
Static Power ◽  
20 Nm ◽  
Bias Point ◽  
The Impact ◽  
Present Understanding

The present understanding of this work is about to evaluate and resolve the temperature compensation point (TCP) or zero temperature coefficient (ZTC) point for a sub-20 nm FinFET. The sensitivity of geometry parameters on assorted performances of Fin based device and its reliability over ample range of temperatures i.e. 25?C to 225?C is reviewed to extend the benchmark of device scalability. The impact of fin height (HFin), fin width (WFin), and temperature (T) on immense performance metrics including on-off ratio (Ion/Ioff), transconductance (gm), gain (AV), cut-off frequency (fT), static power dissipation (PD), energy (E), energy delay product (EDP), and sweet spot (gmfT/ID) of the FinFET is successfully carried out by commercially available TCAD simulator SentaurusTM from Synopsis Inc.

DC-Voltage-Induced Thermal Shift of Bias Point in<tex>$hboxLiNbO_3$</tex>Optical Modulators

2004 ◽  
Vol 16 (11) ◽  
pp. 2460-2462 ◽  
Author(s):  
H. Nagata ◽  
N.F. O'Brien ◽  
W.R. Bosenberg ◽  
G.L. Reiff ◽  
K.R. Voisine
Keyword(s):  
Optical Modulators ◽  
Dc Voltage ◽  
Bias Point ◽  
Shift Of Bias ◽  
Thermal Shift

Lossy Integrator Readout Circuit With Active Bias Point

2021 ◽  
pp. 1-1
Author(s):  
Dobromir P. Dobrev ◽  
Emad Alnasser ◽  
Tatyana D. Neycheva
Keyword(s):  
Readout Circuit ◽  
Bias Point
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