scholarly journals Polarization-Insensitive Waveguide Schottky Photodetectors Based on Mode Hybridization Effects in Asymmetric Plasmonic Waveguides

Sensors ◽  
2020 ◽  
Vol 20 (23) ◽  
pp. 6885
Author(s):  
Qian Li ◽  
Junjie Tu ◽  
Yang Tian ◽  
Yanli Zhao
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Large Scale ◽  
Layer Structure ◽  
Single Layer ◽  
Absorption Enhancement ◽  
Plasmonic Waveguides ◽  
Wavelength Band ◽  
Te Mode ◽  
Polarization Insensitive

Two types of configurations are theoretically proposed to achieve high responsivity polarization-insensitive waveguide Schottky photodetectors, i.e., a dual-layer structure for 1.55 µm and a single-layer structure for 2 µm wavelength band. Mode hybridization effects between quasi-TM modes and sab1 modes in plasmonic waveguides are first presented and further investigated under diverse metal types with different thicknesses in this work. By utilizing the mode hybridization effects between quasi-TE mode and aab0 mode, and also quasi-TM and sab1 mode in our proposed hybrid plasmonic waveguide, light absorption enhancement can be achieved under both TE and TM incidence within ultrathin and short metal stripes, thus resulting in a considerable responsivity for Si-based sub-bandgap photodetection. For 1.55 µm wavelength, the Au-6 nm-thick device can achieve absorptance of 99.6%/87.6% and responsivity of 138 mA·W−1/121.2 mA·W−1 under TE/TM incidence. Meanwhile, the Au-5 nm-thick device can achieve absorptance of 98.4%/90.2% and responsivity of 89 mA·W−1/81.7 mA·W−1 under TE/TM incidence in 2 µm wavelength band. The ultra-compact polarization-insensitive waveguide Schottky photodetectors may have promising applications in large scale all-Si photonic integrated circuits for high-speed optical communication.

scholarly journals Enhancement of Light Absorption in Plasmonic Based Photodetector with Double Nanograting Structure

2021 ◽  
Author(s):  
Savita Kashyap ◽  
Harsimranjit Kaur
Keyword(s):  
Double Layer ◽  
Light Absorption ◽  
High Speed ◽  
Layer Structure ◽  
Light Trapping ◽  
Single Layer ◽  
Bottom Layer ◽  
Absorption Efficiency ◽  
Night Vision ◽  
Absorption Enhancement

Abstract This era of high speed photonic system demand photodetectors to have large bandwidth, gain and improved light enhancement competence. Amongst the different light absorption enhancement methods being researched by the investigators, plasmonic has acquired increased attention in the last decades. Although single layer plasmonic supported metal semiconductor metal photodetector (MSM-PD) has been explored for higher light absorption efficiency, but exploration for double-layer structure is lacking in the literature. This paper presents the performance of plasmonic based photodetectors (PDs) with double layer of nanogratings optimized at wavelength of 1.4 µm for night vision applications. Proposed design of plasmonic supported photodetector with double nanograting reports Quenching factor (QF) of 92.14% and provides enhancement in light with the optimized height of subwavelength aperture (SWA) at 60 nm. This can be credited to fact that both top and bottom layer of grating contributes to light trapping.

Plasma Surface Modification of Silica and its Application in Epoxy Molding Compounds for Large-Scale Integrated Circuits Packaging

2010 ◽  
Vol 158 ◽  
pp. 184-188 ◽  
Author(s):  
Ming Shan Yang ◽  
Lin Kai Li ◽  
Jian Guo Zhang
Keyword(s):  
Surface Modification ◽  
Acrylic Acid ◽  
Integrated Circuits ◽  
Plasma Polymerization ◽  
High Speed ◽  
Large Scale ◽  
Treatment Time ◽  
Rf Plasma ◽  
Formaldehyde Resin ◽  
Molding Compounds

The surface modification of silica for epoxy molding compounds (EMC) was conducted by plasma polymerization using RF plasma (13.56MPa), and the modification factors such as plasma power, gas pressure and treatment time were investigated systematically in this paper. The monomers utilized for the plasma polymer coatings were pyrrole, 1,3-diaminopropane, acrylic acid and urea. The plasma polymerization coating of silica was characterized by FTIR, contact angle. Using the silica treated by plasma as filler, ortho-cresol novolac epoxy as main resin, novolac phenolic-formaldehyde resin as cross-linking agent and 2-methylmizole as curing accelerating agent, the EMCs used for the packaging of large-scale integrated circuits were prepared by high-speed pre-mixture and twin roller mixing technology. The results have shown that the surface of silica can be coated by plasma polymerization of pyrrole, 1,3-diaminopropane, acrylic acid and urea, and the comprehensive properties of EMC were improved.

scholarly journals Implementation of Pruned Backpropagation Neural Network Based on Photonic Integrated Circuits

Photonics ◽  
2021 ◽  
Vol 8 (9) ◽  
pp. 363
Author(s):  
Qi Zhang ◽  
Zhuangzhuang Xing ◽  
Duan Huang
Keyword(s):  
Neural Network ◽  
Neural Networks ◽  
Integrated Circuits ◽  
Energy Efficient ◽  
High Speed ◽  
Large Scale ◽  
Matrix Operation ◽  
Optical Neural Networks ◽  
Optical Neural Network ◽  
Random Initialization

We demonstrate a pruned high-speed and energy-efficient optical backpropagation (BP) neural network. The micro-ring resonator (MRR) banks, as the core of the weight matrix operation, are used for large-scale weighted summation. We find that tuning a pruned MRR weight banks model gives an equivalent performance in training with the model of random initialization. Results show that the overall accuracy of the optical neural network on the MNIST dataset is 93.49% after pruning six-layer MRR weight banks on the condition of low insertion loss. This work is scalable to much more complex networks, such as convolutional neural networks and recurrent neural networks, and provides a potential guide for truly large-scale optical neural networks.

scholarly journals High-speed programmable photonic circuits in a cryogenically compatible, visible–near-infrared 200 mm CMOS architecture

2021 ◽  
Author(s):  
Mark Dong ◽  
Genevieve Clark ◽  
Andrew J. Leenheer ◽  
Matthew Zimmermann ◽  
Daniel Dominguez ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Power Consumption ◽  
High Speed ◽  
Large Scale ◽  
Near Infrared ◽  
Response Times ◽  
Photonic Integrated Circuits ◽  
Complementary Metal Oxide Semiconductor ◽  
Phase Shifters ◽  
Oxide Semiconductor

AbstractRecent advances in photonic integrated circuits have enabled a new generation of programmable Mach–Zehnder meshes (MZMs) realized by using cascaded Mach–Zehnder interferometers capable of universal linear-optical transformations on N input/output optical modes. MZMs serve critical functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. However, MZM implementations reported to date rely on thermo-optic phase shifters, which limit applications due to slow response times and high power consumption. Here we introduce a large-scale MZM platform made in a 200 mm complementary metal–oxide–semiconductor foundry, which uses aluminium nitride piezo-optomechanical actuators coupled to silicon nitride waveguides, enabling low-loss propagation with phase modulation at greater than 100 MHz in the visible–near-infrared wavelengths. Moreover, the vanishingly low hold-power consumption of the piezo-actuators enables these photonic integrated circuits to operate at cryogenic temperatures, paving the way for a fully integrated device architecture for a range of quantum applications.

A high-speed fixed width floating-point multiplier using residue logarithmic number system algorithm

2018 ◽  
Vol 57 (4) ◽  
pp. 361-375 ◽  
Author(s):  
J Jency Rubia ◽  
GA Sathish Kumar
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Large Scale ◽  
Digital Signal ◽  
Number System ◽  
Residue Number System ◽  
Floating Point ◽  
Hardware Complexity ◽  
Logarithmic Number System ◽  
Logarithmic Number

The Residue Logarithmic Number System (RLNS) in digital mathematics allows multiplication and division to be performed considerably quickly and more precisely than the extensively used Floating-Point number setups. RLNS in the pitch of large scale integrated circuits, digital signal processing, multimedia, scientific computing and artificial neural network applications have Fixed Width property which has equal number of in and out bit width; hence, these applications need a Fixed Width multiplier. In this paper, a Fixed Width-Floating-Point multiplier based on RLNS was proposed to increase the processing speed. The truncation errors were reduced by using Taylor series. RLNS is the combination of both the residue number system and the logarithmic number system, and uses a table lookup including all bits for expansion. The proposed scheme is effective with regard to speed, area and power utilization in contrast to the design of conservative Floating-Point mathematics designs. Synthesis results were obtained using a Xilinx 14.7 ISE simulator. The area is 16,668 µm2, power is 37 mW, delay is 6.160 ns and truncation error can be lessened by 89% as compared with the direct-truncated multiplier. The proposed Fixed Width RLNS multiplier performs with lesser compensation error and with minimal hardware complexity, particularly as multiplier input bits increment.

Multi-Layer Ceramic Packaging for High Frequency Mixed-Signal VLSI ASICS

2009 ◽  
Vol 6 (1) ◽  
pp. 38-41
Author(s):  
Lewis Dove
Keyword(s):  
Integrated Circuits ◽  
High Frequency ◽  
High Speed ◽  
Large Scale ◽  
Flip Chip ◽  
Data Converters ◽  
Mixed Signal ◽  
Large Scale Integration ◽  
Circuit Techniques ◽  
Scale Integration

Mixed-signal Application Specific Integrated Circuits (ASICs) have traditionally been used in test and measurement applications for a variety of functions such as data converters, pin electronics circuitry, drivers, and receivers. Over the past several years, the complexity, power density, and bandwidth of these chips has increased dramatically. This has necessitated dramatic changes in the way these chips have been packaged. As the chips have become true VLSI (Very Large Scale Integration) ICs, the number of I/Os have become too large to interconnect with wire bonds. Thus, it has become necessary to utilize flip chip interconnects. Also, the bandwidth of the high-speed signal paths and clocks has increased into the multi Gbit or GHz ranges. This requires the use of packages with good high-frequency performance which are designed using microwave circuit techniques to optimize signal integrity and to minimize signal crosstalk and noise.

scholarly journals Micromechanical Process Integration and Material Optimization for High Performance Silicon-Germanium Bolometers

2012 ◽  
Vol 1437 ◽  
Author(s):  
Gunnar B. Malm ◽  
Mohammadreza Kolahdouz ◽  
Fredrik Forsberg ◽  
Niclas Roxhed ◽  
Frank Niklaus
Keyword(s):  
Integrated Circuits ◽  
Silicon Germanium ◽  
High Performance ◽  
Large Scale ◽  
Process Integration ◽  
Low Frequency ◽  
Single Layer ◽  
Sige Layer ◽  
Frequency Noise ◽  
Wide Range

ABSTRACTSemiconductor-based thermistors are very attractive sensor materials for uncooled thermal infrared (IR) bolometers. Very large scale heterogeneous integration of MEMS is an emerging technology that allows the integration of epitaxially grown, high-performance IR bolometer thermistor materials with pre-processed CMOS-based integrated circuits for the sensor read-out. Thermistor materials based on alternating silicon (Si) and silicon-germanium (SiGe) epitaxial layers have been demonstrated and their performance is continuously increasing. Compared to a single layer of silicon or SiGe, the temperature coefficient of resistance (TCR) can be strongly enhanced to about 3 %/K, by using thin alternating layers. In this paper we report on the optimization of alternating Si/SiGe layers by advanced physically based simulations, including quantum mechanical corrections. Our simulation framework provides reliable predictions for a wide range of SiGe layer compositions, including concentration gradients. Finally, our SiGe thermistor layers have been evaluated in terms of low-frequency noise performance, in order to optimize the bolometer detectivity.

Dry Etch Self-Aligned AlInAs/InGaAs Heterojunction Bipolar Transistors

1991 ◽  
Vol 240 ◽  
Author(s):  
T. R. Fullowan ◽  
S. J. Pearton ◽  
R. F. Kopf ◽  
F. Ren ◽  
Y. K. Chen ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Large Scale ◽  
Electron Cyclotron Resonance ◽  
Layer Structure ◽  
Digital Circuit ◽  
Bipolar Transistors ◽  
High Yield ◽  
Dry Etch

ABSTRACTA dry etch fabrication technology for high-speed AlInAs/InGaAs Heterojunction Bipolar Transistors (HBT's) utilizing low-damage Electron Cyclotron Resonance (ECR) CH4/H2/Ar plasma etching is detailed. The dry etch process uses triple self-alignment of the emitter and base metals and the base mesa, minimizing the base-collector capacitance (CBC). Devices with 2 × 4 μm2 emitters demonstrated current gains of 30–50 with ft and fmax values of ≥ 80 GHz and ≥100 GHz respectively. The structure employs a two-stage collector to achieve breakdown voltage (Vceo ) of 7V. The combination of processing and layer structure delivers truly scalable high yield AlInAs/InGaAs HBT's with both DC and RF characteristics suitable for large-scale, high speed digital circuit applications.

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