scholarly journals 2D Scanning Micromirror with Large Scan Angle and Monolithically Integrated Angle Sensors Based on Piezoelectric Thin Film Aluminum Nitride

Sensors ◽  
2020 ◽  
Vol 20 (22) ◽  
pp. 6599
Author(s):  
Katja Meinel ◽  
Marcel Melzer ◽  
Chris Stoeckel ◽  
Alexey Shaporin ◽  
Roman Forke ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Silicon Layer ◽  
Optimization Procedure ◽  
Silicon On Insulator ◽  
Oriented Growth ◽  
Loop Control ◽  
Sensor Material ◽  
Monolithically Integrated ◽  
Piezoelectric Thin Film

A 2D scanning micromirror with piezoelectric thin film aluminum nitride (AlN), separately used as actuator and sensor material, is presented. For endoscopic applications, such as fluorescence microscopy, the devices have a mirror plate diameter of 0.7 mm with a 4 mm2 chip footprint. After an initial design optimization procedure, two micromirror designs were realized. Different spring parameters for x- and y-tilt were chosen to generate spiral (Design 1) or Lissajous (Design 2) scan patterns. An additional layout, with integrated tilt angle sensors, was introduced (Design 1-S) to enable a closed-loop control. The micromirror devices were monolithically fabricated in 150 mm silicon-on-insulator (SOI) technology. Si (111) was used as the device silicon layer to support a high C-axis oriented growth of AlN. The fabricated micromirror devices were characterized in terms of their scanning and sensor characteristics in air. A scan angle of 91.2° was reached for Design 1 at 13 834 Hz and 50 V. For Design 2 a scan angle of 92.4° at 12 060 Hz, and 123.9° at 13 145 Hz, was reached at 50 V for the x- and y-axis, respectively. The desired 2D scan patterns were successfully generated. A sensor angle sensitivity of 1.9 pC/° was achieved.

Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

2014 ◽  
Vol 116 (3) ◽  
pp. 034102 ◽  
Author(s):  
C. Stoeckel ◽  
C. Kaufmann ◽  
R. Hahn ◽  
R. Schulze ◽  
D. Billep ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Piezoelectric Properties ◽  
Pulsed Dc ◽  
Piezoelectric Thin Film

Non-Destructive Assessment of Thin Film Stresses and Crystal Qualify of Silicon on Insulator Materials with Raman Spectroscopy

1990 ◽  
Vol 188 ◽  
Author(s):  
Ingrid De Wolf ◽  
Jan Vanhellemont ◽  
Herman E. Maes
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Raman Spectroscopy ◽  
Cross Section ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron ◽  
Non Destructive ◽  
Zone Melt

ABSTRACTMicro Raman spectroscopy (RS) is used to study the crystalline quality and the stresses in the thin superficial silicon layer of Silicon-On-Insulator (SO) materials. Results are presented for SIMOX (Separation by IMplanted OXygen) and ZMR (Zone Melt Recrystallized) substrates. Both as implanted and annealed SIMOX structures are investigated. The results from the as implanted structures are correlated with spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (TEM) analyses on the same material. Residual stress in ZMR substrates is studied in low- and high temperature gradient regions.

scholarly journals A Novel Bi-Stable MEMS Membrane Concept Based on a Piezoelectric Thin Film Actuator for Integrated Switching

Proceedings ◽  
2019 ◽  
Vol 2 (13) ◽  
pp. 912 ◽  
Author(s):  
Manuel Dorfmeister ◽  
Bernhard Kössl ◽  
Michael Schneider ◽  
Ulrich Schmid
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Compressive Stress ◽  
Piezoelectric Layer ◽  
Critical Stress ◽  
Ground States ◽  
Piezoelectric Thin Film

This study reports on a novel bi-stable actuator with an integrated aluminum nitride (AlN) piezoelectric layer sandwiched between two electrodes. To achieve bistability, the membranes must exceed a characteristic compressive stress value, also called the critical stress. For this purpose, we used highly c-axis orientated stress-controlled AlN with a thickness of 400 nm. First experiments showed, that it is possible to switch between the two stable ground states with at least two rectangular pulses at a frequency of 80 kHz and with a voltage Vpp of 40 V, resulting in a displacement of about 10 µm for each switching direction.

Thin-Film Transistors in CO2-Laser Crystallized Silicon Films On Fused Silica

1982 ◽  
Vol 13 ◽  
Author(s):  
N. M. Johnson ◽  
H. C. Tuan ◽  
M. D. Moyer ◽  
M. J. Thompson ◽  
D. K. Biegelsen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Fused Silica ◽  
Silicon Films ◽  
Silicon On Insulator ◽  
Bulk Glass ◽  
Crystal Silicon ◽  
Glass Substrates

ABSTRACTThin-film transistors (TFT) have been fabricated in scanned CO2 laser-crystallized silicon films on bulk fused silica. In n-channel enhancement-mode transistors, it is demonstrated that an excessively large leakage current can be electric-field modulated with a gate electrode located beneath the silicon layer. This dual-gate configuration provides direct verification on bulk glass substrates of back-channel leakage as has recently been demonstrated for beam-crystallized silicon films on thermal oxides over silicon wafers. With the application of deep-channel ion implantation to suppress back-channel leakage, high-peformance TFTs have been fabricated in single-crystal silicon films on fused silica. The results demonstrate that scanned CO 2 laser processing of silicon films on bulk glass can provide the basis for a silicon-on-insulator technology.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

Aluminum Nitride Thin Film Based Surface Acoustic Wave Sensors

2008 ◽  
Author(s):  
A. Kabulski ◽  
V. R. Pagán ◽  
D. Cortes ◽  
R. Burda ◽  
O. M. Mukdadi ◽  
...  
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Aluminum Nitride ◽  
Surface Acoustic Wave ◽  
Acoustic Wave Sensors ◽  
Wave Sensors
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