Scandium aluminum nitride: Highly piezoelectric thin film for RF SAW devices in multi GHz range

2012 ◽  
Author(s):  
Akihiko Teshigahara ◽  
Ken-ya Hashimoto ◽  
Morito Akiyama
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Saw Devices ◽  
Piezoelectric Thin Film

Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

2014 ◽  
Vol 116 (3) ◽  
pp. 034102 ◽  
Author(s):  
C. Stoeckel ◽  
C. Kaufmann ◽  
R. Hahn ◽  
R. Schulze ◽  
D. Billep ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Piezoelectric Properties ◽  
Pulsed Dc ◽  
Piezoelectric Thin Film

scholarly journals 2D Scanning Micromirror with Large Scan Angle and Monolithically Integrated Angle Sensors Based on Piezoelectric Thin Film Aluminum Nitride

Sensors ◽  
2020 ◽  
Vol 20 (22) ◽  
pp. 6599
Author(s):  
Katja Meinel ◽  
Marcel Melzer ◽  
Chris Stoeckel ◽  
Alexey Shaporin ◽  
Roman Forke ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Silicon Layer ◽  
Optimization Procedure ◽  
Silicon On Insulator ◽  
Oriented Growth ◽  
Loop Control ◽  
Sensor Material ◽  
Monolithically Integrated ◽  
Piezoelectric Thin Film

A 2D scanning micromirror with piezoelectric thin film aluminum nitride (AlN), separately used as actuator and sensor material, is presented. For endoscopic applications, such as fluorescence microscopy, the devices have a mirror plate diameter of 0.7 mm with a 4 mm2 chip footprint. After an initial design optimization procedure, two micromirror designs were realized. Different spring parameters for x- and y-tilt were chosen to generate spiral (Design 1) or Lissajous (Design 2) scan patterns. An additional layout, with integrated tilt angle sensors, was introduced (Design 1-S) to enable a closed-loop control. The micromirror devices were monolithically fabricated in 150 mm silicon-on-insulator (SOI) technology. Si (111) was used as the device silicon layer to support a high C-axis oriented growth of AlN. The fabricated micromirror devices were characterized in terms of their scanning and sensor characteristics in air. A scan angle of 91.2° was reached for Design 1 at 13 834 Hz and 50 V. For Design 2 a scan angle of 92.4° at 12 060 Hz, and 123.9° at 13 145 Hz, was reached at 50 V for the x- and y-axis, respectively. The desired 2D scan patterns were successfully generated. A sensor angle sensitivity of 1.9 pC/° was achieved.

scholarly journals A Novel Bi-Stable MEMS Membrane Concept Based on a Piezoelectric Thin Film Actuator for Integrated Switching

Proceedings ◽  
2019 ◽  
Vol 2 (13) ◽  
pp. 912 ◽  
Author(s):  
Manuel Dorfmeister ◽  
Bernhard Kössl ◽  
Michael Schneider ◽  
Ulrich Schmid
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Compressive Stress ◽  
Piezoelectric Layer ◽  
Critical Stress ◽  
Ground States ◽  
Piezoelectric Thin Film

This study reports on a novel bi-stable actuator with an integrated aluminum nitride (AlN) piezoelectric layer sandwiched between two electrodes. To achieve bistability, the membranes must exceed a characteristic compressive stress value, also called the critical stress. For this purpose, we used highly c-axis orientated stress-controlled AlN with a thickness of 400 nm. First experiments showed, that it is possible to switch between the two stable ground states with at least two rectangular pulses at a frequency of 80 kHz and with a voltage Vpp of 40 V, resulting in a displacement of about 10 µm for each switching direction.

Aluminum Nitride Thin Film Based Surface Acoustic Wave Sensors

2008 ◽  
Author(s):  
A. Kabulski ◽  
V. R. Pagán ◽  
D. Cortes ◽  
R. Burda ◽  
O. M. Mukdadi ◽  
...  
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Aluminum Nitride ◽  
Surface Acoustic Wave ◽  
Acoustic Wave Sensors ◽  
Wave Sensors

Preparation of YbAlN piezoelectric thin film by sputtering and influence of Yb concentration on properties and crystal structure

2021 ◽  
Vol 47 (11) ◽  
pp. 16029-16036
Author(s):  
Masato Uehara ◽  
Yuki Amano ◽  
Sri Ayu Anggraini ◽  
Kenji Hirata ◽  
Hiroshi Yamada ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Piezoelectric Thin Film

Transparent piezoelectric thin-film devices: Pb(Zr, Ti)O3 thin films on glass substrates

2021 ◽  
Vol 327 ◽  
pp. 112786
Author(s):  
Kazuki Ueda ◽  
Sang-Hyo Kweon ◽  
Hirotaka Hida ◽  
Yoshiharu Mukouyama ◽  
Isaku Kanno
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Glass Substrates ◽  
Piezoelectric Thin Film ◽  
Thin Film Devices
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