scholarly journals Effect of Graphene Doping Level near the Metal Contact Region on Electrical and Photoresponse Characteristics of Graphene Photodetector

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4661
Author(s):  
Jaedong Jung ◽  
Honghwi Park ◽  
Heungsup Won ◽  
Muhan Choi ◽  
Chang-Ju Lee ◽  
...  
Keyword(s):  
Electric Field ◽  
Doping Level ◽  
High Speed ◽  
High Performance ◽  
Contact Region ◽  
Metal Contact ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Level Difference ◽  
Graphene Doping

Graphene-metal contact is crucial to fabricate high-performance graphene photodetectors since the external quantum efficiency (EQE) of the photodetector depends on the contact properties, and the influence of the contact properties is particularly dominant in short channel devices for high-speed applications. Moreover, junction properties between the channel graphene and graphene near the contact are also important to analyze the photoresponse because the built-in electric field in the junction determines the EQE of the photodetector. In this study, we investigated a relation between the photoresponse and the built-in electric field induced from the doping level difference in the junction between the channel graphene and graphene near the contact. The photoresponse could be enhanced with a high junction barrier height that is tuned by the doping level difference. In addition, we observed that the improved electrical characteristics of channel graphene do not guarantee the enhancement of the photoresponse characteristics of graphene photodetectors.

scholarly journals Design of 2.5D Interposer in High Bandwidth Memory and Through Silicon Via for High Speed Signal

2020 ◽  
Author(s):  
Bo Pu
Keyword(s):  
Artificial Intelligence ◽  
High Speed ◽  
High Performance ◽  
Equivalent Model ◽  
Electrical Characteristics ◽  
Through Silicon Via ◽  
High Bandwidth ◽  
Signal Path ◽  
High Speed Switching ◽  
Performance Computing

<p>The 2.5D interposer becomes a crucial solution to realize grand bandwidth of HBM for the increasing data requirement of high performance computing (HPC) and Artificial Intelligence (AI) applications. To overcome high speed switching bottleneck caused by the large resistive and capacitive characteristics of interposer, design methods to achieve an optimized performance in a limited routing area are proposed. Unlike the conventional single through silicon via (TSV), considering the reliability, multiple TSV are used as the robust 3D interconnects for each signal path. An equivalent model to accurately describe the electrical characteristics of the multiple TSVs, and a configuration pattern strategy of TSV to mitigate crosstalk are also proposed.</p>

scholarly journals Comparative Analysis Domino Logic Based Techniques For VLSI Circuit

2014 ◽  
Vol 12 (8) ◽  
pp. 3803-3808 ◽  
Author(s):  
Shilpa Kamde ◽  
Jitesh Shinde ◽  
Sanjay Badjate ◽  
Pratik Hajare
Keyword(s):  
High Speed ◽  
High Performance ◽  
Circuit Simulation ◽  
Dynamic Logic ◽  
Digital Circuit ◽  
Logic Circuit ◽  
Vlsi Circuit ◽  
Short Channel ◽  
Domino Logic ◽  
Low Area

Domino logic is a CMOS-based evolution of the dynamic logic  techniques  based  on  either  PMOS  or  NMOS transistors. Domino logic technique is widely used in modern digital VLSI circuit. Dynamic logic is twice as fast as static CMOS logic because it uses only N fast transistors. The Dynamic (Domino) logic circuit are often favored in high performance designs because of the high speed and low area advantage.Four different dynamic circuit techniques including Basic domino logic circuit are compared in this paper for low power consumption and speed of domino logic circuits. For digital circuit simulation used BSIM(Berkeley Short Channel IGFET ) Model because it control leakage current.

scholarly journals Influence of Substrate Modification with Dipole Monolayers on the Electrical Characteristics of Short-Channel Polymer Field-Effect Transistors

2018 ◽  
Vol 8 (8) ◽  
pp. 1274 ◽  
Author(s):  
Takashi Nagase ◽  
Takeshi Hirose ◽  
Takashi Kobayashi ◽  
Rieko Ueda ◽  
Akira Otomo ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Voltage Drop ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
Hole Injection ◽  
Electrical Characteristics ◽  
Short Channel ◽  
Threshold Voltage Shift ◽  
Gate Insulators

This study investigates the influence of self-assembled monolayer treatment of gate insulators on the electrical characteristics of bottom-gate/bottom-contact organic field-effect transistors (OFETs) with short channel lengths of 5 μm to 30 nm. The treatment of 3-chloropropyltrichlorosilane (CPTS) with large dipoles produces a high built-in electric field perpendicular to the SiO2 gate insulator surface, which results in a threshold voltage shift and enhanced hole injection compared to the treatment of phenethyltrichlorosilane (PETS) with small dipoles. Pronounced parabolic drain current‒voltage (ID‒VD) characteristics due to a space-charge limited current are observed in short-channel OFETs based on poly(3-hexylthiophene) with CPTS-treated gate insulators. CPTS treatment on short-channel OFETs based on poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) suppresses the nonlinear ID increase in the low VD region caused by the voltage drop at the Au/F8T2 contact. The influence of the increase in the net source-drain electric field associated with the reduced voltage drops on the channel-length dependence of the field-effect mobility of short-channel F8T2 FETs is also discussed.

scholarly journals Electric Breakdown in Long Discharge Tubes at Low Pressure (Review)

2020 ◽  
Vol 46 (10) ◽  
pp. 1015-1044 ◽  
Author(s):  
Yu. Z. Ionikh
Keyword(s):  
Electric Field ◽  
High Speed ◽  
External Circuit ◽  
Electrical Characteristics ◽  
Visible Radiation ◽  
Discharge Tubes ◽  
External Sources ◽  
Ionization Waves ◽  
Low Pressures ◽  
Discharge Gap

Abstract The review is devoted to studies of the processes and mechanisms of ignition of a glow discharge in tubes whose length significantly exceeds their diameter (long discharge tubes) at low pressures (~10 Torr and lower) and moderate voltage rise rates (~1 kV/μs and lower). The electric field in such tubes before a breakdown is substantially nonuniform. Therefore, a breakdown occurs after an ionization wave (or waves) passes through the discharge gap at a speed of ~105–107 cm/s. This makes the characteristics of the breakdown in long tubes significantly different from the breakdown between large and closely spaced electrodes, where the electric field is uniform before the breakdown and where the Townsend or, under strong overvoltage, streamer mechanism is realized. On the other hand, the nature of these processes is very different from those occurring in nanosecond discharges, which arise at voltages with a steepness of ~1 kV/ns and higher and are associated with high-speed (~109 cm/s) ionization waves. The review is based on the materials of experimental and computational works published from 1938 to 2020. Breakdown processes, optical and electrical characteristics of the discharge gap during breakdown, and the influence of the external circuit parameters and external actions (shielding and illumination by external sources of visible radiation) are analyzed.

scholarly journals Design of 2.5D Interposer in High Bandwidth Memory and Through Silicon Via for High Speed Signal

2020 ◽  
Author(s):  
Bo Pu
Keyword(s):  
Artificial Intelligence ◽  
High Speed ◽  
High Performance ◽  
Equivalent Model ◽  
Electrical Characteristics ◽  
Through Silicon Via ◽  
High Bandwidth ◽  
Signal Path ◽  
High Speed Switching ◽  
Performance Computing

<p>The 2.5D interposer becomes a crucial solution to realize grand bandwidth of HBM for the increasing data requirement of high performance computing (HPC) and Artificial Intelligence (AI) applications. To overcome high speed switching bottleneck caused by the large resistive and capacitive characteristics of interposer, design methods to achieve an optimized performance in a limited routing area are proposed. Unlike the conventional single through silicon via (TSV), considering the reliability, multiple TSV are used as the robust 3D interconnects for each signal path. An equivalent model to accurately describe the electrical characteristics of the multiple TSVs, and a configuration pattern strategy of TSV to mitigate crosstalk are also proposed.</p>

Vacuum System to Minimize the Specimen Contamination of High-Performance EM

1977 ◽  
Vol 35 ◽  
pp. 68-69
Author(s):  
N. Yoshimura ◽  
K. Shirota ◽  
T. Etoh
Keyword(s):  
Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
High Vacuum ◽  
Vacuum System ◽  
Pump System ◽  
Pumping System ◽  
Diffusion Pump ◽  
Almost All ◽  
Cascade Type

One of the most important requirements for a high-performance EM, especially an analytical EM using a fine beam probe, is to prevent specimen contamination by providing a clean high vacuum in the vicinity of the specimen. However, in almost all commercial EMs, the pressure in the vicinity of the specimen under observation is usually more than ten times higher than the pressure measured at the punping line. The EM column inevitably requires the use of greased Viton O-rings for fine movement, and specimens and films need to be exchanged frequently and several attachments may also be exchanged. For these reasons, a high speed pumping system, as well as a clean vacuum system, is now required. A newly developed electron microscope, the JEM-100CX features clean high vacuum in the vicinity of the specimen, realized by the use of a CASCADE type diffusion pump system which has been essentially improved over its predeces- sorD employed on the JEM-100C.

PHAX-SCAN: Functional integration of a Scanning Electron Microscope and an energy-dispersive x-ray analyser

1989 ◽  
Vol 47 ◽  
pp. 56-57
Author(s):  
Marc H. Peeters ◽  
Max T. Otten
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
High Speed ◽  
High Performance ◽  
Functional Integration ◽  
Energy Dispersive ◽  
X Rays ◽  
X Ray ◽  
High Speed Analysis ◽  
Scanning Electron

Over the past decades, the combination of energy-dispersive analysis of X-rays and scanning electron microscopy has proved to be a powerful tool for fast and reliable elemental characterization of a large variety of specimens. The technique has evolved rapidly from a purely qualitative characterization method to a reliable quantitative way of analysis. In the last 5 years, an increasing need for automation is observed, whereby energy-dispersive analysers control the beam and stage movement of the scanning electron microscope in order to collect digital X-ray images and perform unattended point analysis over multiple locations.The Philips High-speed Analysis of X-rays system (PHAX-Scan) makes use of the high performance dual-processor structure of the EDAX PV9900 analyser and the databus structure of the Philips series 500 scanning electron microscope to provide a highly automated, user-friendly and extremely fast microanalysis system. The software that runs on the hardware described above was specifically designed to provide the ultimate attainable speed on the system.

The bright future of digital imaging in scanning electron microscopy

1993 ◽  
Vol 51 ◽  
pp. 768-769
Author(s):  
M. T. Postek ◽  
A. E. Vladar
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Digital Imaging ◽  
High Speed ◽  
High Performance ◽  
Mass Storage ◽  
Analog To Digital ◽  
Central Processing ◽  
Digital Imaging Technology ◽  
Scanning Electron

One of the major advancements applied to scanning electron microscopy (SEM) during the past 10 years has been the development and application of digital imaging technology. Advancements in technology, notably the availability of less expensive, high-density memory chips and the development of high speed analog-to-digital converters, mass storage and high performance central processing units have fostered this revolution. Today, most modern SEM instruments have digital electronics as a standard feature. These instruments, generally have 8 bit or 256 gray levels with, at least, 512 × 512 pixel density operating at TV rate. In addition, current slow-scan commercial frame-grabber cards, directly applicable to the SEM, can have upwards of 12-14 bit lateral resolution permitting image acquisition at 4096 × 4096 resolution or greater. The two major categories of SEM systems to which digital technology have been applied are:In the analog SEM system the scan generator is normally operated in an analog manner and the image is displayed in an analog or "slow scan" mode.

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