scholarly journals A Poly Resistor Based Time Domain CMOS Temperature Sensor with 9b SAR and Fine Delay Line

Sensors ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 2053 ◽  
Author(s):  
Zhiwei Xu ◽  
Sangjin Byun
Keyword(s):  
Time Domain ◽  
Temperature Sensor ◽  
Delay Line ◽  
Supply Voltage ◽  
Cmos Process ◽  
Voltage Sensitivity ◽  
Sensing Element ◽  
Control Logic ◽  
Temperature Resolution ◽  
New Type

This paper presents a new type of time domain CMOS temperature sensor with a 9b successive approximation register (SAR) control logic and a fine delay line. We adopted an N-type poly resistor as the sensing element for temperature linearity. The chip was implemented in a standard 0.18 m 1P6M bulk CMOS process with general VTH transistors and the active die area was 0.432 mm2. The temperature resolution was 0.49 °C and the temperature error was from −1.6 to +0.6 °C over the range of 0 to 100 °C after two-point calibration. The supply voltage sensitivity was 0.085 °C/mV. The conversion rate was 25kHz and the energy efficiency was 7.2 nJ/sample.

scholarly journals A 0.026 mm2 Time Domain CMOS Temperature Sensor with Simple Current Source

Micromachines ◽  
2020 ◽  
Vol 11 (10) ◽  
pp. 899 ◽  
Author(s):  
Sangwoo Park ◽  
Sangjin Byun
Keyword(s):  
Time Domain ◽  
Temperature Sensor ◽  
Feedback Loop ◽  
Supply Voltage ◽  
Current Source ◽  
Cmos Process ◽  
Voltage Sensitivity ◽  
Temperature Dependent ◽  
Digital Conversion ◽  
Pmos Transistor

This paper presents a time domain CMOS temperature sensor with a simple current source. This sensor chip only occupies a small active die area of 0.026 mm2 because it adopts a simple current source consisting of an n-type poly resistor and a PMOS transistor and a simple current controlled oscillator consisting of three current starved inverter delay cells. Although this current source is based on a simple architecture, it has better temperature linearity than the conventional approach that generates a temperature-dependent current through a poly resistor using a feedback loop. This temperature sensor is designed in a 0.18 μm 1P6M CMOS process. In the post-layout simulations, the temperature error was measured within a range from −1.0 to +0.7 °C over the temperature range of 0 to 100 °C after two point calibration was carried out at 20 and 80 °C, respectively. The temperature resolution was set as 0.32 °C and the temperature to digital conversion rate was 50 kHz. The energy efficiency is 1.4 nJ/sample and the supply voltage sensitivity is 0.077 °C/mV at 27 °C while the supply voltage varies from 1.65 to 1.95 V.

A High-Speed Temperature Sensor with Low Supply Sensitivity for SoC Thermal Monitoring

2018 ◽  
Vol 27 (07) ◽  
pp. 1850116
Author(s):  
Yuanxin Bao ◽  
Wenyuan Li
Keyword(s):  
Temperature Sensor ◽  
Conversion Rate ◽  
High Speed ◽  
Supply Voltage ◽  
Ring Oscillator ◽  
Temperature Sensitive ◽  
Cmos Process ◽  
Digital Code ◽  
Thermal Monitoring ◽  
Worst Case

A high-speed low-supply-sensitivity temperature sensor is presented for thermal monitoring of system on a chip (SoC). The proposed sensor transforms the temperature to complementary to absolute temperature (CTAT) frequency and then into digital code. A CTAT voltage reference supplies a temperature-sensitive ring oscillator, which enhances temperature sensitivity and conversion rate. To reduce the supply sensitivity, an operational amplifier with a unity gain for power supply is proposed. A frequency-to-digital converter with piecewise linear fitting is used to convert the frequency into the digital code corresponding to temperature and correct nonlinearity. These additional characteristics are distinct from the conventional oscillator-based temperature sensors. The sensor is fabricated in a 180[Formula: see text]nm CMOS process and occupies a small area of 0.048[Formula: see text]mm2 excluding bondpads. After a one-point calibration, the sensor achieves an inaccuracy of [Formula: see text][Formula: see text]1.5[Formula: see text]C from [Formula: see text]45[Formula: see text]C to 85[Formula: see text]C under a supply voltage of 1.4–2.4[Formula: see text]V showing a worst-case supply sensitivity of 0.5[Formula: see text]C/V. The sensor maintains a high conversion rate of 45[Formula: see text]KS/s with a fine resolution of 0.25[Formula: see text]C/LSB, which is suitable for SoC thermal monitoring. Under a supply voltage of 1.8[Formula: see text]V, the maximum energy consumption per conversion is only 7.8[Formula: see text]nJ at [Formula: see text]45[Formula: see text]C.

scholarly journals A 6-Locking Cycles All-Digital Duty Cycle Corrector with Synchronous Input Clock

Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 860
Author(s):  
Shao-Ku Kao
Keyword(s):  
Duty Cycle ◽  
Delay Line ◽  
Supply Voltage ◽  
Cmos Process ◽  
Delay Lines ◽  
Clock Frequency ◽  
Quantization Method ◽  
Total Delay ◽  
Chip Area ◽  
Measurement Results

This paper proposes an all-digital duty cycle corrector with synchronous fast locking, and adopts a new quantization method to effectively produce a phase of 180 degrees or half delay of the input clock. By taking two adjacent rising edges input to two delay lines, the total delay time of the delay line is twice the other delay line. This circuit uses a 0.18 μm CMOS process, and the overall chip area is 0.0613 mm2, while the input clock frequency is 500 MHz to 1000 MHz, and the acceptable input clock duty cycle range is 20% to 80%. Measurement results show that the output clock duty cycle is 50% ± 2.5% at a supply voltage of 1.8 V operating at 1000 MHz, the power consumed is 10.1 mW, with peak-to-peak jitter of 9.89 ps.

A Low-Cost Low-Power Capacitive Humidity Sensor in CMOS Technology

2014 ◽  
Vol 556-562 ◽  
pp. 1842-1846
Author(s):  
Fang Ming Deng ◽  
Yi Gang He
Keyword(s):  
Humidity Sensor ◽  
Supply Voltage ◽  
Low Cost ◽  
Cmos Technology ◽  
Cmos Process ◽  
Sensing Element ◽  
Digital Conversion ◽  
Sensor Interface ◽  
Delta Sigma ◽  
Capacitive Humidity Sensor

This paper presents a capacitive humidity sensor in CMOS technology. The humidity sensor element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication cost. The sensor interface is based on a delta-sigma converter and can be easily reconfigured to compensate for process variation of the sensing element. The proposed humidity sensor is fabricated in 0.16μm standard CMOS process and the chip occupies 0.25mm2. The measurement result shows that this humidity sensor acquires a resolution of 0.1%RH in the range of 20%RH to 90%RH. The interface achieves a 12.5-bits capacitance-to-digital conversion and consumes only 9.6μW power at 1.2V supply voltage.

scholarly journals Categorization and Characterization of Time Domain CMOS Temperature Sensors

Sensors ◽  
2020 ◽  
Vol 20 (22) ◽  
pp. 6700
Author(s):  
Sangjin Byun
Keyword(s):  
Time Domain ◽  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Temperature Sensors ◽  
Oxide Semiconductor ◽  
Voltage Sensitivity ◽  
Power Supply Voltage ◽  
Measured Time ◽  
Long Time ◽  
The Time Domain

Time domain complementary metal-oxide-semiconductor (CMOS) temperature sensors estimate the temperature of a sensory device by measuring the frequency, period and/or delay time instead of the voltage and/or current signals that have been traditionally measured for a long time. In this paper, the time domain CMOS temperature sensors are categorized into twelve types by using the temperature estimation function which is newly defined as the ratio of two measured time domain signals. The categorized time domain CMOS temperature sensors, which have been published in literature, show different characteristics respectively in terms of temperature conversion rate, die area, process variation compensation, temperature error, power supply voltage sensitivity and so on. Based on their characteristics, we can choose the most appropriate one from twelve types to satisfy a given specification.

scholarly journals Deep Submicron EGFET Based on Transistor Association Technique for Chemical Sensing

Sensors ◽  
2019 ◽  
Vol 19 (5) ◽  
pp. 1063 ◽  
Author(s):  
Salvatore Pullano ◽  
Nishat Tasneem ◽  
Ifana Mahbub ◽  
Samira Shamsir ◽  
Marta Greco ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Power Consumption ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Supply Voltage ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Voltage Sensitivity ◽  
Current Sensitivity ◽  
Effect Transistor

Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used for biosensor fabrication, studies on electronic interfaces are still scarce (e.g., noise processes, scaling). Therefore, the incorporation of a custom EGFET can lead to biosensors with optimized performance. In this paper, the design and characterization of a transistor association (TA)-based EGFET was investigated. Prototypes were manufactured using a 130 nm standard complementary metal-oxide semiconductor (CMOS) process and compared with devices presented in recent literature. A DC equivalence with the counterpart involving a single equivalent transistor was observed. Experimental results showed a power consumption of 24.99 mW at 1.2 V supply voltage with a minimum die area of 0.685 × 1.2 mm2. The higher aspect ratio devices required a proportionally increased die area and power consumption. Conversely, the input-referred noise showed an opposite trend with a minimum of 176.4 nVrms over the 0.1 to 10 Hz frequency band for a higher aspect ratio. EGFET as a pH sensor presented further validation of the design with an average voltage sensitivity of 50.3 mV/pH, a maximum current sensitivity of 15.71 mA1/2/pH, a linearity higher than 99.9%, and the possibility of operating at a lower noise level with a compact design and a low complexity.

scholarly journals Wireless Interrogation of a High Temperature Antenna Sensor Without Electronics

2016 ◽  
Author(s):  
Franck Mbanya Tchafa ◽  
Jun Yao ◽  
Haiying Huang
Keyword(s):  
Time Domain ◽  
Patch Antenna ◽  
Microstrip Antenna ◽  
Sensor Node ◽  
Delay Line ◽  
Wide Band ◽  
Temperature Sensing ◽  
Sensing Element ◽  
Background Clutter ◽  
Temperature Test

This paper presents a novel interrogation mechanism for an antenna sensor subjected to high temperatures. In sensor node, an Ultra-wide Band (UWB) microstrip antenna was used as a wireless Tx/Rx transceiver to amplify the reflected interrogation signal from the temperature-sensing element, i.e. the patch antenna-sensor. A microstrip delay line was used to connect the Tx/Rx antenna and the antenna-sensor so that the reflected signal from the sensor node is delayed and can be separated from the background clutter using time-domain (T-D) gating technique. In this paper, the principle of operation of the proposed interrogation mechanism is first discussed, followed by the design and simulations of the sensor node circuitry. Finally, a temperature test was conducted to validate the wireless temperature sensing performance of the antenna sensor.

Resistorless Frequency Locked On-Chip Oscillator with Proportional-to-Absolute Temperature References

2019 ◽  
Vol 28 (10) ◽  
pp. 1950162 ◽  
Author(s):  
Peiqing Han ◽  
Niansong Mei ◽  
Zhaofeng Zhang
Keyword(s):  
Power Consumption ◽  
Temperature Coefficient ◽  
Supply Voltage ◽  
Absolute Temperature ◽  
Cmos Process ◽  
Voltage Sensitivity ◽  
Chip Area ◽  
Frequency Spread ◽  
Temperature Coefficient Of Frequency ◽  
On Chip

A 36-kHz frequency locked on-chip oscillator is proposed, the proportional-to-absolute temperature (PTAT) current and voltage generator is presented to eliminate conventional temperature-compensated resistors. The resistorless approach reduces the process variation of frequency and the chip area. The oscillator is fabricated in 0.18-[Formula: see text]m standard CMOS process with an active area of 0.072[Formula: see text]mm2. The temperature coefficient of frequency is 48[Formula: see text]ppm/∘C at best and 82.5[Formula: see text]ppm/∘C on average over [Formula: see text]–70∘C and the frequency spread is 1.43% ([Formula: see text]/[Formula: see text] without calibration. The supply voltage sensitivity is 1.8%/V in the range from 0.65[Formula: see text]V to 1[Formula: see text]V and the power consumption is 95[Formula: see text]nW under the supply voltage of 0.65[Formula: see text]V.

scholarly journals RF Transceiver for the Multi-Mode Radar Applications

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1563
Author(s):  
Jae Kwon Ha ◽  
Chang Kyun Noh ◽  
Jin Seop Lee ◽  
Ho Jin Kang ◽  
Yu Min Kim ◽  
...  
Keyword(s):  
Long Range ◽  
Integrated Circuit ◽  
Flicker Noise ◽  
Noise Figure ◽  
Supply Voltage ◽  
Doppler Frequency ◽  
Cmos Process ◽  
Rf Transceiver ◽  
Dc Offset ◽  
Multi Mode

In this work, a multi-mode radar transceiver supporting pulse, FMCW and CW modes was designed as an integrated circuit. The radars mainly detect the targets move by using the Doppler frequency which is significantly affected by flicker noise of the receiver from several Hz to several kHz. Due to this flicker noise, the long-range detection performance of the radars is greatly reduced, and the accuracy of range to the target and velocity is also deteriorated. Therefore, we propose a transmitter that suppresses LO leakage in consideration of long-range detection, target distance, velocity, and noise figure. We also propose a receiver structure that suppresses DC offset due to image signal and LO leakage. The design was conducted with TSMC 65 nm CMOS process, and the designed and fabricated circuit consumes a current of 265 mA at 1.2 V supply voltage. The proposed transmitter confirms the LO leakage suppression of 37 dB at 24 GHz. The proposed receiver improves the noise figure by about 20 dB at 100 Hz by applying a double conversion architecture and an image rejection, and it illustrates a DC rejection of 30 dB. Afterwards, the operation of the pulse, FMCW, and CW modes of the designed radar in integrated circuit was confirmed through experiment using a test PCB.

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