scholarly journals Microstructure Design for Fast Lifetime Measurements of Magnetic Tunneling Junctions

Sensors ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 583 ◽  
Author(s):  
Andrés Conca Parra ◽  
Frederick Casper ◽  
Johannes Paul ◽  
Ronald Lehndorff ◽  
Christian Haupt ◽  
...  

The estimation of the reliability of magnetic field sensors against failure is a critical point concerning their application for industrial purposes. Due to the physical stochastic nature of the failure events, this can only be done by means of a statistical approach which is extremely time consuming and prevents a continuous observation of the production. Here, we present a novel microstructure design for a parallel measurement of the lifetime characteristics of a sensor population. By making use of two alternative designs and the Weibull statistical distribution function, we are able to measure the lifetime characteristics of a CoFeB/MgO/CoFeB tunneling junction population. The main parameters governing the time evolution of the failure rate are estimated and discussed and the suitability of the microstructure for highly reliable sensor application is proven.

2011 ◽  
Vol 109 (7) ◽  
pp. 07C731 ◽  
Author(s):  
Lubna R. Shah ◽  
Nupur Bhargava ◽  
Sangcheol Kim ◽  
Ryan Stearrett ◽  
Xiaoming Kou ◽  
...  

2017 ◽  
Vol 6 (9) ◽  
pp. N148-N154 ◽  
Author(s):  
Sungwoo Park ◽  
Kyungchae Yang ◽  
Hoseok Lee ◽  
Dongwoo Kim ◽  
Jongung Baek ◽  
...  

2014 ◽  
Vol 707 ◽  
pp. 338-342
Author(s):  
Zheng Huang

Based on the phase time definition,we study theoretically the transmission coefficients and the spin-tunneling time in parabolic-well magnetic tunneling junction with a tunnel barrier in the presence of Rashba spin-orbit interaction. The significant quantum size, quantum coherence, and Rashba spin-orbit interaction are considered simultaneously. It is found that the tunneling time strongly depends on the spin orientation of tunneling electrons. We also find that as the length of the semiconductor increases, the spin tunneling time shows curved increase. It exhibits useful instructions for the design of spin electronic devices.


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