scholarly journals Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing

Sensors ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 224 ◽  
Author(s):  
Qianqian Guo ◽  
Fei Lu ◽  
Qiulin Tan ◽  
Tianhao Zhou ◽  
Jijun Xiong ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
Harsh Environments ◽  
Indium Gallium Zinc Oxide ◽  
Testing Methods ◽  
Forward Current ◽  
Indium Gallium ◽  
The Relationship ◽  
High Temperature Electronic

High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height ФB, and temperature. The sensitivity of the diode sensors is 0.81 mV/°C, 1.37 mV/°C, and 1.59 mV/°C when the forward current density of the diode is 1 × 10−5 A/cm2, 1 × 10−4 A/cm2, and 1 × 10−3 A/cm2, respectively.

Indium–Gallium–Zinc Oxide Schottky Diodes Operating across the Glass Transition of Stimuli‐Responsive Polymers

2020 ◽  
Vol 6 (4) ◽  
pp. 1901210 ◽  
Author(s):  
Edgar Guerrero ◽  
Alexander Polednik ◽  
Melanie Ecker ◽  
Alexandra Joshi‐Imre ◽  
Wooyeol Choi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Glass Transition ◽  
Schottky Diodes ◽  
Indium Gallium Zinc Oxide ◽  
Stimuli Responsive ◽  
Stimuli Responsive Polymers ◽  
Responsive Polymers ◽  
Indium Gallium

scholarly journals Photoluminescence between 3.36 eV and 3.41 eV from GaN Epitaxial Layers

1999 ◽  
Vol 572 ◽  
Author(s):  
R. Seitz ◽  
C. Gaspar ◽  
T. Monteiro ◽  
E. Pereira ◽  
M. A. Poisson ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Electronic Devices ◽  
Basic Material ◽  
Epitaxial Layers ◽  
Important Place ◽  
Impurity Defects ◽  
High Temperature Electronic

GaN, its alloys, QWs and MQWs have gained an important place among shortwavelength optical emitters and high temperature electronic devices [1,2]. The performance of such devices is limited by the presence of native and impurity defects. The understanding of the optical properties of the basic material allows us to improve its quality and thus increase the performance of these materials.

scholarly journals Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

2015 ◽  
Vol 107 (9) ◽  
pp. 093505 ◽  
Author(s):  
Jiawei Zhang ◽  
Linqing Zhang ◽  
Xiaochen Ma ◽  
Joshua Wilson ◽  
Jidong Jin ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Schottky Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Indium Gallium Zinc Oxide ◽  
Low Frequency Noise ◽  
Indium Gallium

A Chemical Sensor Based on AlGaN

2006 ◽  
Vol 517 ◽  
pp. 33-36 ◽  
Author(s):  
A.Y. Hudeish ◽  
C.K. Tan ◽  
Azlan Abdul Aziz ◽  
Hassan Zainuriah
Keyword(s):  
High Temperature ◽  
Response Time ◽  
Gas Sensor ◽  
Chemical Sensor ◽  
Schottky Diodes ◽  
Test Chamber ◽  
Sensor Response ◽  
Hydrogen Gas ◽  
Forward Current ◽  
Solar Blind

There is a particular interest in the development of wide band gap semiconductor gas sensor because of their potential for high temperature operation and the ability to integrate them with power or microwave electrodes or with UV solar-blind detector and emitters fabricated in the same materials. AlGaN based devices are attractive for gas sensing in automotive exhausts and flow-gas, because of strong spontaneous polarization of AlGaN (free carrier concentration profiles inside this material that is very sensitive to any manipulation of surface change). In this report, we characterized the Ni/AlGaN/Sapphire Schottky barriers as hydrogen gas sensor at temperature range of 25°C to 500°C. A change in forward current was obtained in response to a change in ambient from pure N2 to 2% H2/ 98% N2, higher than the change in forward current obtained in Ni/GaN or Ni/Si Schottky diodes measured under the same conditions. The sensor response time was independent on the rate of mass transport of gas into the test chamber, while at high temperature, dissociation of gas controlled by the diffusion of atomic hydrogen through the metal/AlGaN surface, increased the sensor response time.

scholarly journals High-temperature electronic devices enabled by hBN-encapsulated graphene

2019 ◽  
Vol 114 (12) ◽  
pp. 123104 ◽  
Author(s):  
Makars Šiškins ◽  
Ciaran Mullan ◽  
Seok-Kyun Son ◽  
Jun Yin ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
High Temperature ◽  
Electronic Devices ◽  
High Temperature Electronic
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