scholarly journals High-temperature electronic devices enabled by hBN-encapsulated graphene

2019 ◽  
Vol 114 (12) ◽  
pp. 123104 ◽  
Author(s):  
Makars Šiškins ◽  
Ciaran Mullan ◽  
Seok-Kyun Son ◽  
Jun Yin ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
High Temperature ◽  
Electronic Devices ◽  
High Temperature Electronic

scholarly journals Photoluminescence between 3.36 eV and 3.41 eV from GaN Epitaxial Layers

1999 ◽  
Vol 572 ◽  
Author(s):  
R. Seitz ◽  
C. Gaspar ◽  
T. Monteiro ◽  
E. Pereira ◽  
M. A. Poisson ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Electronic Devices ◽  
Basic Material ◽  
Epitaxial Layers ◽  
Important Place ◽  
Impurity Defects ◽  
High Temperature Electronic

GaN, its alloys, QWs and MQWs have gained an important place among shortwavelength optical emitters and high temperature electronic devices [1,2]. The performance of such devices is limited by the presence of native and impurity defects. The understanding of the optical properties of the basic material allows us to improve its quality and thus increase the performance of these materials.

scholarly journals Al2O3-Based a-IGZO Schottky Diodes for Temperature Sensing

Sensors ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 224 ◽  
Author(s):  
Qianqian Guo ◽  
Fei Lu ◽  
Qiulin Tan ◽  
Tianhao Zhou ◽  
Jijun Xiong ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Diodes ◽  
Electronic Devices ◽  
Harsh Environments ◽  
Indium Gallium Zinc Oxide ◽  
Testing Methods ◽  
Forward Current ◽  
Indium Gallium ◽  
The Relationship ◽  
High Temperature Electronic

High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 °C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height ФB, and temperature. The sensitivity of the diode sensors is 0.81 mV/°C, 1.37 mV/°C, and 1.59 mV/°C when the forward current density of the diode is 1 × 10−5 A/cm2, 1 × 10−4 A/cm2, and 1 × 10−3 A/cm2, respectively.

DIP Test Socket Characterization for 300°C

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000213-000219 ◽  
Author(s):  
David Shaddock ◽  
Liang Yin ◽  
Zhenzhen Shen ◽  
Zhangming Zhou ◽  
R. Wayne Johnson
Keyword(s):  
High Temperature ◽  
Electronic Devices ◽  
Circuit Board ◽  
Test Fixture ◽  
Prototype Test ◽  
Test Board ◽  
Functional Reliability ◽  
Long Lifetime ◽  
High Temperature Electronic ◽  
Dip Test

Demonstrating functional reliability testing of high temperature electronic devices for long lifetime at 300°C requires electrical test fixtures with even better reliability. Advances in complexity of SiC devices and the need for increased accelerated tests motivate the need for a reliable test fixture at high temperature. The design, fabrication and testing of a prototype test board using commercially available materials shows stability beyond 2000 hours. The approach uses an alumina circuit board with thick film conductors interconnecting an array of BeNi contacts to surface pads. The pads are connected to high temperature wires using spring loaded contacts so that the circuit board may be removed.

The Development and Qualification of a DC-DC Converter for 225°C (437°F) Operating Temperature

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000214-000221
Author(s):  
Bob Hunt
Keyword(s):  
High Temperature ◽  
Operating Temperature ◽  
Reliable Operation ◽  
Packaging Technology ◽  
High Temperature Electronic

This paper presents the development and qualification of high temperature electronic module packaging technology to service the requirements for extended and reliable operation at 225°C (437°F) for applications in the Oil & Gas, Automotive and Aerospace markets. It also covers the application of this technology to the first in a range of DC-DC converter modules and is based on Cissoid's ‘ETNA’ semiconductor components.

A High Temperature and UV Stable Vapor Phase Polymer for Electronics Applications

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000207-000214
Author(s):  
Rakesh Kumar
Keyword(s):  
High Temperature ◽  
Electronic Devices ◽  
Electronics Industry ◽  
Performance Requirements ◽  
Cell Components ◽  
Temperature Exposure ◽  
Electronic Parts ◽  
Long Term Performance ◽  
Term Performance

A recent development in the area of high temperature and UV stable polymers, which offers solutions to many existing packaging and reliability challenges of electronics industry, is described. Packaging, protection and reliability of various electronic devices and component, including PCB's, MEMS, optoelectronic devices, fuel cell components and nano-electronic parts are, becoming more challenging due to their long-term performance requirements. This high temperature polymer, named Parylene HT, offers solutions to many existing protective, packaging and reliability issues in the electronics and medical industries, in part because of its excellent electrical and mechanical properties, chemical inertness and long-term thermal stability at high temperature exposure (up to 350°C long-term and short-term at 450 °C). Experimental results and trial runs demonstrate the ability of Parylene HT coating to meet the growing requirements of higher dielectric capabilities, higher temperature integrity, mechanical processing, etc. of a dynamic electronics industry. In addition, Parylene HT polymer coating truly conforms to parts due to its molecular level deposition characteristics. Its suitability and biocompatibility encourage researchers to explore Parylene HT's role in sensors and in active electronic devices for various industries.

Printed Wiring for High-Power Electric Devices by Using Ag-sinter paste

2017 ◽  
Vol 2017 (1) ◽  
pp. 000093-000096
Author(s):  
Seungjun Noh ◽  
Chanyang Choe ◽  
Chuantong Chen ◽  
Shijo Nagao ◽  
Katsuaki Suganuma
Keyword(s):  
High Temperature ◽  
Current Density ◽  
High Current Density ◽  
Electronic Devices ◽  
Wire Bonding ◽  
Power Electronic ◽  
High Current ◽  
Cu Substrates ◽  
Ag Paste ◽  
Sintered Ag

Abstract This work introduces the possibility of using Ag sinter-paste as a novel high-temperature and high-current wire bonding solution. We investigated the electromigration (EM) behavior and lifetime of the sintered Ag wiring under high current density and high temperature required for the design of power electronic devices. The sinter Ag wiring fabricated on the two Cu substrates were tested under current densities of 2.7 × 104 A/cm2 at temperature of 250 °C. The microstructure evolution of sintered wiring was characterized after EM test. The resistance of sintered wiring did not change even after EM test for 300 hours, which confirms that the Ag-paste sinter wire bonding is rather stable than aluminum wire bonding under high temperature and high current density. No degradation was observed in microstructure of sintered wiring after EM test. Thus, it is expected that Ag paste sinter wire bonding is one of potential alternative interconnection technology for power electronic devices.

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