scholarly journals A High Resolution On-Chip Delay Sensor with Low Supply-Voltage Sensitivity for High-Performance Electronic Systems

Sensors ◽  
2015 ◽  
Vol 15 (2) ◽  
pp. 4408-4424 ◽  
Author(s):  
Duo Sheng ◽  
Hsiu-Fan Lai ◽  
Sheng-Min Chan ◽  
Min-Rong Hong
2013 ◽  
Vol 22 (10) ◽  
pp. 1340024
Author(s):  
HAO LUO ◽  
YAN HAN ◽  
RAY C. C. CHEUNG ◽  
TIANLIN CAO ◽  
XIAOPENG LIU ◽  
...  

This paper provides an audio 2-1 cascaded ΣΔ modulator using a novel gain-boost class-C inverter. The gain-boost class-C inverter behaves as a subthreshold amplifier. By introducing a gain-boost module, the inverter DC-gain is increased from 48 dB to 67 dB. The gain-boost class-C inverter consumes 57 μW at 1.2-V supply, where the gain-boost module consumes only 3 μW. In addition, an on-chip body bias technique is introduced to compensate the process and supply voltage variations of the class-C inverter. The proposed inverter-based ΣΔ modulator chip is implemented in 0.13-μm CMOS process, and achieves 86-dB peak-signal to noise and distortion ratio (SNDR) and 90-dB dynamic range (DR) over 22.05-KHz bandwidth at 1.2-V supply consuming 360 μW, which demonstrates that the gain-boost class-C inverter is particularly suitable for micro-power high-resolution applications.


2014 ◽  
Vol 17 (1) ◽  
pp. 62-70
Author(s):  
Khanh Trung Le ◽  
Tu Trong Bui ◽  
Hung Duc Le ◽  
Kha Cong Pham

In the paper, we present a design of a low voltage Operation Amplifier (OPAMP) circuit using split-length transistors. Indirect feedback compensation is an advanced technique used to stabilize the operation of an OPAMP. Cascode transistors are usually implemented for indirect feedback systems. However, these transistors are not suitable for low voltage design. In this study, we have taken advantage of split-length transistors and indirect feedback compensation technique to design a high performance OPAMP. As a result, the OPAMP operates not only at low supply voltage but also at high frequency. The OPAMP has been designed and fabricated in a 0.18um CMOS technology. This OPAMP achieves 100 dB gain, 90 MHz unity gain frequency and 60 degrees phase margin at 2 V supply voltage.


2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Chen Chong ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen

AbstractIn this paper, a dielectric modulated double source trench gate tunnel FET (DM-DSTGTFET) based on biosensor is proposed for the detection of biomolecules. DM-DSTGTFET adopts double source and trench gate to enhance the on-state current and to generate bidirectional current. In the proposed structure, two cavities are etched over 1 nm gate oxide for biomolecules filling. A 2D simulation in the Technology Computer-Aided Design (TCAD) is adopted for the analysis of sensitivity study. The results show that under low supply voltage, the current sensitivity of the DM-DSTGTFET is as high as 1.38 × 105, and the threshold voltage sensitivity can reach 1.2 V. Therefore, the DM-DSTGTFET biosensor has good application prospects due to its low power consumption and high sensitivity.


2016 ◽  
Vol 25 (06) ◽  
pp. 1650066 ◽  
Author(s):  
Pantre Kompitaya ◽  
Khanittha Kaewdang

A current-mode CMOS true RMS-to-DC (RMS: root-mean-square) converter with very low voltage and low power is proposed in this paper. The design techniques are based on the implicit computation and translinear principle by using CMOS transistors that operate in the weak inversion region. The circuit can operate for two-quadrant input current with wide input dynamic range (0.4–500[Formula: see text]nA) with an error of less than 1%. Furthermore, its features are very low supply voltage (0.8[Formula: see text]V), very low power consumption ([Formula: see text]0.2[Formula: see text]nW) and low circuit complexity that is suitable for integrated circuits (ICs). The proposed circuit is designed using standard 0.18[Formula: see text][Formula: see text]m CMOS technology and the HSPICE simulation results show the high performance of the circuit and confirm the validity of the proposed design technique.


Author(s):  
MOHAMMAD HADI DANESH ◽  
SASAN NIKSERESHT ◽  
MAHYAR DEHDAST

In this paper a low-power current-mode RMS-to-DC converter is proposed. The proposed converter includes absolute value circuit, squarer/divider circuit, low-pass filter and square root circuit which employ CMOS transistors operating in weak inversion region. The RMS-to-DC converter has low power consumption (<1μW), low supply voltage (0.9V), wide input range (from 50 nA to 500 nA), low relative error (<3 %), and low circuit complexity. Comparing the proposed circuit with two other current-mode circuits shows that the former outperforms the latters in terms of power dissipation, supply voltage, and complexity. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed design technique.


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