scholarly journals Nanofabrication of SOI-Based Photonic Waveguide Resonators for Gravimetric Molecule Detection

Proceedings ◽  
2019 ◽  
Vol 2 (13) ◽  
pp. 1055
Author(s):  
Tony Granz ◽  
Julia Sophie Böke ◽  
Gerry Hamdana ◽  
Michael Martens ◽  
Arijit Misra ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Brillouin Scattering ◽  
Silicon On Insulator ◽  
Grating Couplers ◽  
Inductively Coupled ◽  
Waveguide Width ◽  
Silicon Photonic ◽  
Wet Chemical ◽  
Peripheral Areas ◽  
Current Area

A silicon photonic microresonator comprising two curved vertical grating couplers and a single suspended Si nanowaveguide (NWG) is developed to investigate the giant enhanced Brillouin scattering in subwavelength NWGs caused by photon-phonon interaction. Finite element modelling based on COMSOL Multiphysics is conducted to optimize the critical device parameters (e.g., waveguide width, height, and length). As the smallest structures that need to be resolved are down to ~15 nm in size, electron-beam nanolithography is employed. In this case, dosage tests are carried out to minimize proximity charging effects during the nanopatterning of the silicon-on-insulator (SOI) surface, resulting in appropriate adaptive current area dosage distributions for the periodic gratings, couplers peripheral areas, and NWG, respectively. Furthermore, an enhanced inductively coupled plasma dry reactive ion etching (ICP-DRIE) process at a cryogenic temperature is used to realize smooth vertical sidewalls. Finally, buffered hydrofluoric acid (BHF)-based wet chemical etching is carried out to remove the buried oxide resulting in a suspended Si waveguide.

scholarly journals Transferable micromachined piezoresistive force sensor with integrated double-meander-spring system

2017 ◽  
Vol 6 (1) ◽  
pp. 121-133 ◽  
Author(s):  
Gerry Hamdana ◽  
Maik Bertke ◽  
Lutz Doering ◽  
Thomas Frank ◽  
Uwe Brand ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
High Reliability ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Force Sensor ◽  
Silicon On Insulator ◽  
Basic Material ◽  
Inductively Coupled ◽  
Sensor Properties ◽  
Micro Force Sensor

Abstract. A developed transferable micro force sensor was evaluated by comparing its response with an industrially manufactured device. In order to pre-identify sensor properties, three-dimensional (3-D) sensor models were simulated with a vertically applied force up to 1000 µN. Then, controllable batch fabrication was performed by alternately utilizing inductively coupled plasma (ICP) reactive ion etching (RIE) and photolithography. The assessments of sensor performance were based on sensor linearity, stiffness and sensitivity. Analysis of the device properties revealed that combination of a modest stiffness value (i.e., (8.19 ± 0.07) N m−1) and high sensitivity (i.e., (15.34 ± 0.14) V N−1) at different probing position can be realized using a meander-spring configuration. Furthermore, lower noise voltage is obtained using a double-layer silicon on insulator (DL-SOI) as basic material to ensure high reliability and an excellent performance of the sensor.

Silicon nanowire fabrication

2014 ◽  
Vol 31 (2) ◽  
pp. 78-85 ◽  
Author(s):  
Tijjani Adam ◽  
U. Hashim
Keyword(s):  
Inductively Coupled Plasma ◽  
Ph Monitoring ◽  
Silicon Nanowire ◽  
Cost Effective ◽  
Morphological Characterization ◽  
Silicon On Insulator ◽  
Si Nanowires ◽  
Content Type ◽  
Ph Variation ◽  
Inductively Coupled

Purpose – The purpose of this study is to present reports on fabrication of silicon (Si) nanowires (NWs). The study consists of microwire formation on silicon-on-insulator (SOI) that was fabricated using a top-down approach which involved conventional photolithography coupled with shallow anisotropic etching. Design/methodology/approach – A 5-inch p-type silicon-on-insulator (SOI) coated with 250nm layer and Photoresist (PR) with thickness of 400nm is coated in order to make pattern transfer via binary mask, after the exposure and development, a resist pattern between 3 μm-5 μm were obtained, Oxygen plasma spreen was used to reduce the size of the PR to 800 μm, after this, the wafer with 800 μm was loaded into SAMCO inductively coupled plasma (ICP)-RIE and got silicoon microwire was obtained. Next, the sample was put into an oxidation furnace for 15, 30, 45 and 60 minutes and the sample was removed and dipped into a buffered oxide etch solution for five minutes to remove all the SiO2 ashes. Findings – The morphological characterization was conducted using scanning electron microscopy and atomic force microscopy. At terminal two, gold electrodes which were designated as source and drain were fabricated on top of individual NWs using conventional lithography electrical and chemical response. Once the trimming process has been completed, the device's current–voltage (I-V) characteristic was measured by using a Keithley 4200 semiconductor parameter analyser. Devices with different width of wires approximately 20, 40, 60 and 80 nm were characterized. The wire current variation as a function of the pH variation in voltage was investigated: pH monitoring for variations of pH values between 5 and 9. Originality/value – This paper provides useful information on novel and yet simple cost-effective fabrication of SiNW; as such, it should be of interest to a broad readership, especially those interested in micro/nanofabrication.

Scattering loss in silicon-on-insulator rib waveguides fabricated by inductively coupled plasma reactive ion etching

2004 ◽  
Vol 85 (18) ◽  
pp. 3995-3997 ◽  
Author(s):  
Yongjin Wang ◽  
Zhilang Lin ◽  
Xinli Cheng ◽  
Changsheng Zhang ◽  
Fan Gao ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Silicon On Insulator ◽  
Ion Etching ◽  
Scattering Loss ◽  
Inductively Coupled ◽  
Rib Waveguides

scholarly journals Synthesis of nano-sized β-tricalcium phosphate via wet precipitation

2011 ◽  
Vol 5 (4) ◽  
pp. 193-198 ◽  
Author(s):  
Bahman Mirhadi ◽  
Behzad Mehdikhani ◽  
Nayereh Askari
Keyword(s):  
Tricalcium Phosphate ◽  
Inductively Coupled Plasma ◽  
Calcium Nitrate ◽  
Atomic Emission ◽  
Chemical Precipitation ◽  
Precipitation Method ◽  
Inductively Coupled ◽  
Average Grain Size ◽  
Wet Chemical ◽  
Nano Size

Nano-size ?-tricalcium phosphate powders with average grain size of 50 nm were prepared by the wet chemical precipitation method with calcium nitrate and diammonium hydrogen phosphate as calcium and phosphorus precursors, respectively. The pH of the system was maintained at 8 and 10.8 by adding of sodium hydroxide. Filtered cake was dried at 80?C and calcined at 700?C. The dried and calcined powders were characterized using X-ray diffractrometry (XRD), Fourier transform infrared spectroscopy (FTIR), inductively coupled plasma atomic emission spectroscopy (ICPAES) and scanning electron microscopy (SEM).

scholarly journals The Hybrid Fabrication Process of Metal/Silicon Composite Structure for MEMS S&A Device

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 469 ◽  
Author(s):  
Tengjiang Hu ◽  
Kuang Fang ◽  
Zhiming Zhang ◽  
Xiaohua Jiang ◽  
Yulong Zhao
Keyword(s):  
High Precision ◽  
Composite Structure ◽  
Inductively Coupled Plasma ◽  
Fabrication Process ◽  
Silicon On Insulator ◽  
Cover Plate ◽  
Inductively Coupled ◽  
Structure Strength ◽  
Silicon Based ◽  
High Structure

The micro-electromechanical system (MEMS) safety-and-arming (S&A) device has the features of integration and miniaturization, which is one of the important directions of weapon development. Confined by the fabrication process, the silicon-based devices are too fragile, and the metal-based devices are low precision. In order to solve the contradiction between high precision and high structure strength, a metal/silicon composite structure is proposed in this paper, and a hybrid fabrication process is introduced. This new method mainly consists of metal sputtering, electroplating, and (inductively–coupled-plasma) ICP etching. As the resolution of the thick dry film is limited, the process of a femtosecond laser is applied to refine the structure, and the Ni plate (a block of 1 mm × 3 mm × 0.3 mm with a cavity of ϕ 0.85 mm × 0.3 mm in the center) is fabricated on the silicon-on-insulator (SOI) wafer successfully. After the double sides are etched by ICP, the SOI wafer is immersed in a buffered-oxide-etch (BOE) etchant to remove the buried layer. The cover plate acts as the encapsulation and is bonded with the SOI wafer by the epoxy glue. Then, the temporary support beam of the device is broken by the probe, and the suspended composite structure can be fully released. The hybrid process is the integration of the silicon-based process and the metal-based process, which can combine the advantages of both high precision and a high structure strength. The process proposed here is suitable for the application of weapon miniaturization.

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