scholarly journals Novel Low-Temperature Chemical Vapor Deposition of Hydrothermal Delignified Wood for Hydrophobic Property

Polymers ◽  
2020 ◽  
Vol 12 (8) ◽  
pp. 1757 ◽  
Author(s):  
Rui Yang ◽  
Yunyi Liang ◽  
Shu Hong ◽  
Shida Zuo ◽  
Yingji Wu ◽  
...  

As a hydrophilic material, wood is difficult to utilize for external applications due to the variable weather conditions. In this study, an efficient, facile, and low-cost method was developed to enhance the hydrophobicity of wood. By applying the low-temperature chemical vapor deposition (CVD) technology, the polydimethylsiloxane-coated wood (PDMS@wood) with hydrophobic surface was fabricated employing dichlorodimethylsilane as the CVD chemical resource. The result of water contact angle (i.e., 157.3°) revealed the hydrophobic behavior of the PDMS@wood. The microstructures of the wood samples were observed by scanning electron microscopy and energy dispersive X-ray spectroscopy (EDS) analysis verified PDMS successfully coated on wood surfaces. The chemical functional groups of the PDMS@wood were investigated by Fourier transform infrared (FT-IR) and Raman spectra. The thermogravimetric results indicated the enhanced thermal stability of the wood after PDMS coating. In addition, the stability test of PDMS@wood indicated that the hydrophobicity properties of the PDMS@wood samples were preserved after long-time storage (e.g., 30 days). The scratch test was carried out to examine the abrasion resistance of the hydrophobic coatings on PDMS@wood surface. It was suggested that low-temperature CVD process could be a successful approach for fabricating hydrophobic wood.

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Teng-Hsiang Chang ◽  
Chiao Chang ◽  
Yen-Ho Chu ◽  
Chien-Chieh Lee ◽  
Jenq-Yang Chang ◽  
...  

This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.


ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  

2009 ◽  
Vol 21 (23) ◽  
pp. 5601-5606 ◽  
Author(s):  
Navneet Kumar ◽  
Wontae Noh ◽  
Scott R. Daly ◽  
Gregory S. Girolami ◽  
John R. Abelson

1995 ◽  
Vol 66 (21) ◽  
pp. 2867-2869 ◽  
Author(s):  
Akihiro Miyauchi ◽  
Kazuhiro Ueda ◽  
Yousuke Inoue ◽  
Takaya Suzuki ◽  
Yoshinori Imai

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