scholarly journals Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene—Direct-Write Kirigami Patterns

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1394 ◽  
Author(s):  
Cheng Zhang ◽  
Ondrej Dyck ◽  
David A. Garfinkel ◽  
Michael G. Stanford ◽  
Alex A. Belianinov ◽  
...  

A helium gas field ion source has been demonstrated to be capable of realizing higher milling resolution relative to liquid gallium ion sources. One drawback, however, is that the helium ion mass is prohibitively low for reasonable sputtering rates of bulk materials, requiring a dosage that may lead to significant subsurface damage. Manipulation of suspended graphene is, therefore, a logical application for He+ milling. We demonstrate that competitive ion beam-induced deposition from residual carbonaceous contamination can be thermally mitigated via a pulsed laser-assisted He+ milling. By optimizing pulsed laser power density, frequency, and pulse width, we reduce the carbonaceous byproducts and mill graphene gaps down to sub 10 nm in highly complex kiragami patterns.

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 527
Author(s):  
Alex Belianinov ◽  
Matthew J. Burch ◽  
Anton Ievlev ◽  
Songkil Kim ◽  
Michael G. Stanford ◽  
...  

The next generation optical, electronic, biological, and sensing devices as well as platforms will inevitably extend their architecture into the 3rd dimension to enhance functionality. In focused ion beam induced deposition (FIBID), a helium gas field ion source can be used with an organometallic precursor gas to fabricate nanoscale structures in 3D with high-precision and smaller critical dimensions than focused electron beam induced deposition (FEBID), traditional liquid metal source FIBID, or other additive manufacturing technology. In this work, we report the effect of beam current, dwell time, and pixel pitch on the resultant segment and angle growth for nanoscale 3D mesh objects. We note subtle beam heating effects, which impact the segment angle and the feature size. Additionally, we investigate the competition of material deposition and sputtering during the 3D FIBID process, with helium ion microscopy experiments and Monte Carlo simulations. Our results show complex 3D mesh structures measuring ~300 nm in the largest dimension, with individual features as small as 16 nm at full width half maximum (FWHM). These assemblies can be completed in minutes, with the underlying fabrication technology compatible with existing lithographic techniques, suggesting a higher-throughput pathway to integrating FIBID with established nanofabrication techniques.


2020 ◽  
Vol 11 ◽  
pp. 1742-1749
Author(s):  
Nico Klingner ◽  
Gregor Hlawacek ◽  
Paul Mazarov ◽  
Wolfgang Pilz ◽  
Fabian Meyer ◽  
...  

While the application of focused ion beam (FIB) techniques has become a well-established technique in research and development for patterning and prototyping on the nanometer scale, there is still a large underused potential with respect to the usage of ion species other than gallium. Light ions in the range of m = 1–28 u (hydrogen to silicon) are of increasing interest due to the available high beam resolution in the nanometer range and their special chemical and physical behavior in the substrate. In this work, helium and neon ion beams from a helium ion microscope are compared with ion beams such as lithium, beryllium, boron, and silicon, obtained from a mass-separated FIB using a liquid metal alloy ion source (LMAIS) with respect to the imaging and milling resolution, as well as the current stability. Simulations were carried out to investigate whether the experimentally smallest ion-milled trenches are limited by the size of the collision cascade. While He+ offers, experimentally and in simulations, the smallest minimum trench width, light ion species such as Li+ or Be+ from a LMAIS offer higher milling rates and ion currents while outperforming the milling resolution of Ne+ from a gas field ion source. The comparison allows one to select the best possible ion species for the specific demands in terms of resolution, beam current, and volume to be drilled.


Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 273
Author(s):  
Cheng Zhang ◽  
Ondrej Dyck ◽  
David A. Garfinkel ◽  
Michael G. Stanford ◽  
Alex A. Belianinov ◽  
...  

The authors wish to make the following corrections to this paper [...]


2016 ◽  
Vol 22 (S3) ◽  
pp. 616-617
Author(s):  
R. Urban ◽  
H. Moritani ◽  
R.A. Wolkow ◽  
J.L. Pitters

2017 ◽  
Author(s):  
Chien-Lin Lee ◽  
Sheng-Wei Chien ◽  
Sheng-Yung Chen ◽  
Chun-Hung Liu ◽  
Kuen-Yu Tsai ◽  
...  
Keyword(s):  
Ion Beam ◽  

1995 ◽  
Vol 396 ◽  
Author(s):  
Igor V. Svadkovsk ◽  
Anatoly P. Dostanko

AbstractTwo types of the ion sources for ion beam assisted deposition using inert gases, oxygen or nitrogen are reported. Their design and operational features are presented. Each of them has the properties of two existing main types of the gridless Hall sources: an end-Hall source and the anode-layer version a closed-drift ion source. Basic distinction of the developed sources is the extended range of ion energies in high-current beam for optimization of deposition, cleaning and etching processes.


1976 ◽  
Vol 41 (5) ◽  
pp. 999-1000
Author(s):  
A. P. Kabachenko ◽  
I. V. Kuznetsov ◽  
Li Hen Su ◽  
N. I. Tarantin

Author(s):  
H. Wu ◽  
D. Ferranti ◽  
L.A. Stern ◽  
D. Xia ◽  
M.W. Phaneuf

Abstract Gallium focused ion beams (Ga-FIB) have been used historically in the semiconductor industry for failure analysis, as well as circuit edit. However, in spite of the best of these efforts, as integrated circuit dimensions continue to shrink, Ga-FIB induced processes are being driven to their physical limits. The main purpose of this paper is to report the helium and neon ion beams' induced chemistry, including metal deposition, dielectric deposition, and chemically enhanced etching. Two simple examples are shown as proofs of concept demonstrating gas field ion source (GFIS) development for circuit edit applications. The paper summarizes the general utility of helium and neon ion beams for metal deposition, dielectric deposition, and sputtering and etching processes, and discusses some of the technical challenges associated with current GFIS technology. Using GFIS ion beams, it has been observed that the top and buried metal lines can be cut precisely and then reconnected.


Nanoscale ◽  
2017 ◽  
Vol 9 (35) ◽  
pp. 12949-12956 ◽  
Author(s):  
Anton V. Ievlev ◽  
Jacek Jakowski ◽  
Matthew J. Burch ◽  
Vighter Iberi ◽  
Holland Hysmith ◽  
...  

Direct write with liquid precursor using an helium ion beam, allows fabrication of nanostructures with sub-15 nm resolution and high chemical purity.


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