scholarly journals The Role of Dopant Concentration on Conductivity and Mobility of CdTe Thin Films

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Ala J. Al-Douri ◽  
F. Y. Al-Shakily ◽  
Abdalla A. Alnajjar ◽  
Maysoon F. A. Alias
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Dopant Concentration ◽  
Glass Substrates ◽  
Order Of Magnitude ◽  
Cdte Thin Films ◽  
P Type ◽  
Substrate Temperatures

Films of CdTe pure and doped with various atomic percentages of Al and Sb (0.5, 1.5 & 2.5) were prepared, and their electrical properties were investigated. The films were prepared by thermal evaporation on glass substrates at two substrate temperatures (Ts=RT& 423 K). The results showed that the conduction phenomena of all the investigated CdTe thin films on glass substrates are caused by two distinct mechanisms. Room temperature DC conductivity increases by a factor of four for undoped CdTe thin films asTsincreases and by 1-2 orders of magnitude with increasing dopant percentage of Al and Sb. In general, films doped with Sb are more efficient than Al-doped films. The activation energy (Ea2) decreases with increasingTsand dopant percentage for both Al and Sb. Undoped CdTe films deposited at RT are p-type convert to n-type with increasingTsand upon doping with Al at more than 0.5%. The carrier concentration decreases asTsincreases while it increases with increasing dopant percentage. Hall mobility decreases more than three times as Al increases whereas it increases about one order of magnitude with increasing Sb percentage in CdTe thin films deposited at 423 K and RT, respectively.

scholarly journals Electrical and morphological study of thermally evaporated (Sb2S3)1-xSnx thin films

2019 ◽  
Vol 13 (26) ◽  
pp. 42-50
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Structural Morphology ◽  
Glass Substrates ◽  
Vacuum Thermal Evaporation ◽  
Microstructure Parameters ◽  
Order Of Magnitude ◽  
P Type ◽  
Tin Content ◽  
Deposition Conditions

(Sb2S3)1-xSnx thin films with different concentrations (0, 0.05 and0.15) and thicknesses (300,500 and 700nm) have been deposited bysingle source vacuum thermal evaporation onto glass substrates atambient temperature to study the effect of tin content, thickness andon its structural morphology, and electrical properties. AFM studyrevealed that microstructure parameters such as crystallite size, androughness found to depend upon deposition conditions. The DCconductivity of the vacuum evaporated (Sb2S3)1-x Snx thin films wasmeasured in the temperature range (293-473)K and was found toincrease on order of magnitude with increase of thickness, and tincontent. The plot of conductivity with reciprocal temperaturesuggests, there are three activation energies Ea1, Ea2 and Ea3 for(Sb2S3)1-x Snx for all x content values and thicknesses whichdecreases with increasing tin content and thickness. Hall effectmeasurement showed that low thickness (Sb2S3)1-x Snx film exhibitn-type conductance whereas the film exhibit p-type towards thehigher thickness. The electric carrier concentration and mobilityshow opposite dependence upon tin content and thickness.

scholarly journals Study the effect of thickness and annealing temperature on the Electrical Properties of CdTe thin Films

2008 ◽  
Vol 5 (3) ◽  
pp. 449-453
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Conductivity Measurements ◽  
Annealing Temperature Increase ◽  
Glass Substrates ◽  
Cdte Thin Films ◽  
Different Thickness

The electrical properties of polycrystalline cadmium telluride thin films of different thickness (200,300,400)nm deposited by thermal evaporation onto glass substrates at room temperature and treated at different annealing temperature (373, 423, 473) K are reported. Conductivity measurements have been showed that the conductivity increases from 5.69X10-5 to 0.0011, 0.0001 (?.cm)-1 when the film thickness and annealing temperature increase respectively. This increasing in ?d.c due to increasing the carrier concentration which result from the excess free Te in these films.

Microstructural and Optical Properties of SnO Thin Film by Thermal Evaporation

2013 ◽  
Vol 795 ◽  
pp. 558-562
Author(s):  
Lee Siang Chuah ◽  
Z. Mohamed ◽  
Zainuriah Hassan
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Hole Concentration ◽  
Hexagonal Wurtzite Structure ◽  
Thermal Evaporation Method ◽  
Sem Image ◽  
Glass Substrates ◽  
Xrd Patterns ◽  
P Type

In this work, we present results about the preparation and characterization of stannous oxide (SnO) thin films. SnO thin films were obtained via thermal evaporation method from SnO2powder as source material. These thin films were successfully deposited onto well cleaned glass substrates by thermal evaporation technique. The as deposited thin films were of thickness of 2500 Å and film were post-deposition annealed in air ambient at 400°C for 20 min and 40 min, respectively in a furnace. As-deposited films are highly conductive andptype. The best p-type SnO film annealed at 400 °C for 40 min shows a resistivity of 1.05 Ω·cm and a relatively high hole concentration of 2 × 1017cm3at room temperature. The X-ray diffraction (XRD) patterns of annealed films exhibit a polycrystalline hexagonal wurtzite structure without preferred orientation. The scanning electron microscopy (SEM) image shows the presence of uniformly dispersed spherical in shaped SnO particles. The mean grain sizes (diameter) are calculated to be about 80 and 100 nm for the p-type SnO films prepared at 400 °C for 20 min, and 40 min, respectively. Room temperature photoluminescence (PL) spectra of the SnO film exhibit two emission bands, around the wavelength of 300 nm and 450 nm. All spectra were measured at room temperature.

Thickness dependence of AC conductivity in TlSe thin films

2019 ◽  
Vol 97 (11) ◽  
pp. 1182-1184
Author(s):  
Ugur Saglam ◽  
Sahin Yakut ◽  
Binnur Karabak ◽  
Deniz Bozoglu
Keyword(s):  
Thin Films ◽  
Ac Conductivity ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
High Vacuum ◽  
Low Frequency ◽  
Covalent Bond ◽  
Tetragonal Symmetry ◽  
Glass Substrates ◽  
A Chain

Thalium selenide (TlSe), which has a lattice with tetragonal symmetry, is a member of the A3B6 semiconductor group. The structure of TlSe is defined as chains where atoms inside are bonded with an ionic-covalent bond. TlSe thin films were deposited by thermal evaporation under a high vacuum on glass substrates. The structure of TlSe thin films is amorphous with a tetragonal structure. The AC conductivity measurements were operated via the measurements of capacitance and dielectric dissipation (tanδ) at room temperature. AC conductivity values change between 10−11 and 10−6 S/cm at the low-frequency side with decreasing thickness. Two different conduction regions were observed with increasing frequency. The region observed at the low-frequency side can be attributed to the motion of a chain-like part of the lattice, while the region observed at the high-frequency side can be attributed to side groups.

scholarly journals Effect of thickness on structural properties of BixSb2-xTe3 thin films

2019 ◽  
Vol 17 (41) ◽  
pp. 15-28
Author(s):  
Hussain. M. Selman
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Average Surface Roughness ◽  
X Ray Diffraction ◽  
Polycrystalline Structure ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Different Thickness

BixSb2-xTe3 alloys with different ratios of Bi (x=0, 0.1, 0.3, 0.5, and 2) have been prepared, Thin films of these alloys were prepared using thermal evaporation method under vacuum of 10-5 Torr on glass substrates at room temperature with different deposition rate (0.16, 0.5, 0.83) nm/sec for thickness (100, 300, 500) respectively. The X–ray diffraction measurements for BixSb2-xTe3 bulk and thin films indicate the polycrystalline structure with a strong intensity of peak of plane (015) preferred orientation with additional peaks, (0015) and (1010 ) reflections planes, which is meaning that all films present a very good texture along the (015) plane axis at different intensities for each thin film for different thickness. AFM measurements for the thin films of BixSb2-xTe3, show that the grain size and the average surface roughness decreases with increasing of the percentage Bi for different thickness.

scholarly journals Titanium-Doped P-Type WO3 Thin Films for Liquefied Petroleum Gas Detection

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 727 ◽  
Author(s):  
Yuzhenghan He ◽  
Xiaoyan Shi ◽  
Kyle Chen ◽  
Xiaohong Yang ◽  
Jun Chen
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Hole Concentration ◽  
Liquefied Petroleum Gas ◽  
Sem Images ◽  
X Ray ◽  
Glass Substrates ◽  
P Type ◽  
Wo3 Thin Films

Gas sensors are an important part of smart homes in the era of the Internet of Things. In this work, we studied Ti-doped P-type WO3 thin films for liquefied petroleum gas (LPG) sensors. Ti-doped tungsten oxide films were deposited on glass substrates by direct current reactive magnetron sputtering from a W-Ti alloy target at room temperature. After annealing at 450 °C in N2 ambient for 60 min, p-type Ti-doped WO3 was achieved for the first time. The measurement of the room temperature Hall-effect shows that the film has a resistivity of 5.223 × 103 Ωcm, a hole concentration of 9.227 × 1012 cm−3, and mobility of 1.295 × 102 cm2V−1s−1. X-Ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses reveal that the substitution of W6+ with Ti4+ resulted in p-type conductance. The scanning electron microscope (SEM) images show that the films consist of densely packed nanoparticles. The transmittance of the p-type films is between 72% and 84% in the visible spectra and the optical bandgap is 3.28 eV. The resistance increased when the films were exposed to the reducing gas of liquefied petroleum gas, further confirming the p-type conduction of the films. The p-type films have a quick response and recovery behavior to LPG.

ROOM TEMPERATURE FERROMAGNETISM IN (N, Co)-CODOPED ZnO THIN FILMS

2007 ◽  
Vol 21 (13) ◽  
pp. 799-806 ◽  
Author(s):  
D. L. HOU ◽  
X. J. YE ◽  
H. J. MENG ◽  
X. Y. ZHAO ◽  
H. J. ZHOU ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Inverse Correlation ◽  
Zno Thin Films ◽  
Clear Correlation ◽  
Ferromagnetic Property ◽  
Glass Substrates ◽  
P Type ◽  
Co Doped

A series of nitrogen-doped Zn 0.93 Co 0.07 O thin films grown on glass substrates were prepared by magnetron sputtering, which have shown ferromagnetic property at room temperature. The largest moment of about 4.92 μB/ Co and Curie temperature (T c ) of about 300 K were observed for Zn 0.93 Co 0.07 O thin film. P-type Co -doped ZnO thin films with room temperature ferromagnetism were obtained. We demonstrated a clear correlation between nitrogen and transition temperature and an inverse correlation between nitrogen and magnetization per Co ion.

Effect of Annealing and Substrate Temperatures on the Structural Properties of In2Te3 Thin Films

2018 ◽  
Vol 24 (8) ◽  
pp. 5611-5613
Author(s):  
Vallem Sowjanya ◽  
Kasturi V Bangera ◽  
G. K Shivakumar
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Xrd Analysis ◽  
X Rays ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
Glass Substrates ◽  
Indium Telluride ◽  
Substrate Temperatures

Indium telluride (In2Te3) thin films were synthesized on glass substrates using thermal evaporation method under the vacuum of the order of 10−6 torr. The role of annealing and substrate temperatures on the growth of In2Te3 thin films was investigated. The structure, surface morphology, and composition of films were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive analysis of X-rays (EDAX), respectively. The as-deposited films at substrate temperature 25 °C and 150 °C were found to be non-stoichiometric. The films deposited at 150 °C substrate temperature and post-annealed at 300 °C for 1 h were stoichiometric in composition and the XRD analysis revealed that these films were cubic in nature with preferred orientation along (5 1 1) plane. The electrical studies revealed that the films were p-type in nature. In addition, the resistivity and optical band gap of optimized films found to be 33 × 10−2 Ω-cm and 0.99 eV, respectively.

Chlorine Doping of Cadmium Sulfide on the Example of CBD CdS

2009 ◽  
Vol 1165 ◽  
Author(s):  
Hiie Jaan ◽  
Federico Quinci ◽  
Vanni Lughi ◽  
Valter Sergo ◽  
Vello Valdna ◽  
...  
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Electronic Properties ◽  
Glass Substrates ◽  
Counter Pressure ◽  
Chlorine Doping ◽  
Order Of Magnitude ◽  
Cds Thin Films ◽  
Lower Resistivity

AbstractThe role of thermal annealing and of CdCl2 as a main source of electrically active but vaporizable chlorine doping in chemical bath deposited CdS thin films is studied. The films were deposited on glass substrates from aqueous solution of either CdCl2, NH4Cl, NH4OH, and thiourea, or CdSO4, (NH4)2SO4, NH4OH, and thiourea. Films deposited in the presence of CdCl2 and annealed in H2 atmosphere at 310 and 420 °C show a resistivity lower than 10 Ω·cm, one order of magnitude less than for identically annealed films deposited in absence of CdCl2. Annealing at 420 °C in closed ampoules, where a counter pressure of CdCl2 builds up, leads to a lower resistivity on the order of 10−1 Ω·cm, confirming the key role of chlorine on the electronic properties. However, further characterization via photoluminescence raises new questions about chlorine-related defects and their role in the mechanisms that govern film resistivity.

scholarly journals Optical Properties of Al- and Sb-Doped CdTe Thin Films

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
A. A. J. Al-Douri ◽  
F. Y. Al-Shakily ◽  
M. F. A. Alias ◽  
A. A. Alnajjar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Transition ◽  
Coefficient Increase ◽  
Evaporation Technique ◽  
Direct Optical Transition ◽  
Cdte Thin Films ◽  
Substrate Temperatures

Nondoped and (Al, Sb)-doped CdTe thin films with 0.5, 1.5, and 2.5  wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures () of room temperature (RT) and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n), extinction coefficient (), and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant asn, and real and imaginary parts of the dielectric coefficient increase.

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