scholarly journals Wet-Etched Microlens Array for 200 nm Spatial Isolation of Epitaxial Single QDs and 80 nm Broadband Enhancement of Their Quantum Light Extraction

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1136
Author(s):  
Shulun Li ◽  
Xiangjun Shang ◽  
Yao Chen ◽  
Xiangbin Su ◽  
Huiming Hao ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Emission ◽  
Microlens Array ◽  
Bragg Reflector ◽  
Light Extraction ◽  
Single Photon Emission ◽  
Distributed Bragg Reflector ◽  
Purcell Factor ◽  
Time Correlations ◽  
Spatial Isolation

Uniform arrays of three shapes (gauss, hat, and peak) of GaAs microlenses (MLs) by wet-etching are demonstrated, ∼200 nm spatial isolation of epitaxial single QDs embedded (λ: 890–990 nm) and broadband (Δλ∼80 nm) enhancement of their quantum light extraction are obtained, which is also suitable for telecom-band epitaxial QDs. Combined with the bottom distributed Bragg reflector, the hat-shaped ML forms a cavity and achieves the best enhancement: extraction efficiency of 26%, Purcell factor of 2 and single-photon count rate of 7×106 counts per second at the first lens; while the gauss-shaped ML shows a broader band (e.g., longer λ) enhancement. In the MLs, single QDs with featured exciton emissions are observed, whose time correlations prove single-photon emission with multi-photon probability g(2)(0)=0.02; some QDs show both biexciton XX and exciton X emissions and exhibit a perfect cascade feature. This work could pave a step towards a scalable array of QD single-photon sources and the application of QD photon-pair emission for entanglement experiments.

scholarly journals Неклассические источники света на основе селективно позиционированных микролинзовых структур и (111) In(Ga)As квантовых точек

2019 ◽  
Vol 53 (10) ◽  
pp. 1338
Author(s):  
И.А. Деребезов ◽  
В.А. Гайслер ◽  
А.В. Гайслер ◽  
Д.В. Дмитриев ◽  
А.И. Торопов ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Single Photon ◽  
Photon Emission ◽  
Bragg Reflector ◽  
Entangled Photons ◽  
Single Photon Emission ◽  
Distributed Bragg Reflector ◽  
Natural Width ◽  
Single Quantum Dot

Hybrid microcavity for single quantum dot based emitters has been developed and realized. The microcavity consists of semiconductor distributed Bragg reflector and microlens, which is selectively positioned over a single (111) In(Ga)As quantum dot. We have demonstrated pure single photon emission with g(2)(0) = 0.07. The fine structure of exciton states of (111) In(Ga)As quantum dots is studied. It is shown that the splitting of exciton states is comparable with the natural width of exciton lines, which is of great interest for the design of emitters of pairs of entangled photons on the basis of these quantum dots.

scholarly journals InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication Window

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 759
Author(s):  
Paweł Wyborski ◽  
Anna Musiał ◽  
Paweł Mrowiński ◽  
Paweł Podemski ◽  
Vasilij Baumann ◽  
...  
Keyword(s):  
Single Photon ◽  
Photon Emission ◽  
Bragg Reflector ◽  
Spectral Lines ◽  
Distributed Bragg Reflector ◽  
The Third ◽  
Photonic Structures ◽  
Single Photon Emitters ◽  
Quantum Dashes ◽  
Telecommunication Window

We investigated emission properties of photonic structures with InAs/InGaAlAs/InP quantum dashes grown by molecular beam epitaxy on a distributed Bragg reflector. In high-spatial-resolution photoluminescence experiment, well-resolved sharp spectral lines are observed and single-photon emission is detected in the third telecommunication window characterized by very low multiphoton events probabilities. The photoluminescence spectra measured on simple photonic structures in the form of cylindrical mesas reveal significant intensity enhancement by a factor of 4 when compared to a planar sample. These results are supported by simulations of the electromagnetic field distribution, which show emission extraction efficiencies even above 18% for optimized designs. When combined with relatively simple and undemanding fabrication approach, it makes this kind of structures competitive with the existing solutions in that spectral range and prospective in the context of efficient and practical single-photon sources for fiber-based quantum networks applications.

scholarly journals Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5221
Author(s):  
Piotr Andrzej Wroński ◽  
Paweł Wyborski ◽  
Anna Musiał ◽  
Paweł Podemski ◽  
Grzegorz Sęk ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Single Photon ◽  
Photon Emission ◽  
Bragg Reflector ◽  
Light Sources ◽  
Distributed Bragg Reflector ◽  
Time Resolved ◽  
Metamorphic Buffer ◽  
Silica Fibers ◽  
Emission Lifetime

We demonstrate single-photon emission with a low probability of multiphoton events of 5% in the C-band of telecommunication spectral range of standard silica fibers from molecular beam epitaxy grown (100)-GaAs-based structure with InAs quantum dots (QDs) on a metamorphic buffer layer. For this purpose, we propose and implement graded In content digitally alloyed InGaAs metamorphic buffer layer with maximal In content of 42% and GaAs/AlAs distributed Bragg reflector underneath to enhance the extraction efficiency of QD emission. The fundamental limit of the emission rate for the investigated structures is 0.5 GHz based on an emission lifetime of 1.95 ns determined from time-resolved photoluminescence. We prove the relevance of a proposed technology platform for the realization of non-classical light sources in the context of fiber-based quantum communication applications.

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