scholarly journals InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication Window

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 759
Author(s):  
Paweł Wyborski ◽  
Anna Musiał ◽  
Paweł Mrowiński ◽  
Paweł Podemski ◽  
Vasilij Baumann ◽  
...  

We investigated emission properties of photonic structures with InAs/InGaAlAs/InP quantum dashes grown by molecular beam epitaxy on a distributed Bragg reflector. In high-spatial-resolution photoluminescence experiment, well-resolved sharp spectral lines are observed and single-photon emission is detected in the third telecommunication window characterized by very low multiphoton events probabilities. The photoluminescence spectra measured on simple photonic structures in the form of cylindrical mesas reveal significant intensity enhancement by a factor of 4 when compared to a planar sample. These results are supported by simulations of the electromagnetic field distribution, which show emission extraction efficiencies even above 18% for optimized designs. When combined with relatively simple and undemanding fabrication approach, it makes this kind of structures competitive with the existing solutions in that spectral range and prospective in the context of efficient and practical single-photon sources for fiber-based quantum networks applications.

2017 ◽  
Vol 132 (2) ◽  
pp. 382-386 ◽  
Author(s):  
P. Mrowiński ◽  
Ł. Dusanowski ◽  
A. Somers ◽  
S. Höfling ◽  
J.P. Reithmaier ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5221
Author(s):  
Piotr Andrzej Wroński ◽  
Paweł Wyborski ◽  
Anna Musiał ◽  
Paweł Podemski ◽  
Grzegorz Sęk ◽  
...  

We demonstrate single-photon emission with a low probability of multiphoton events of 5% in the C-band of telecommunication spectral range of standard silica fibers from molecular beam epitaxy grown (100)-GaAs-based structure with InAs quantum dots (QDs) on a metamorphic buffer layer. For this purpose, we propose and implement graded In content digitally alloyed InGaAs metamorphic buffer layer with maximal In content of 42% and GaAs/AlAs distributed Bragg reflector underneath to enhance the extraction efficiency of QD emission. The fundamental limit of the emission rate for the investigated structures is 0.5 GHz based on an emission lifetime of 1.95 ns determined from time-resolved photoluminescence. We prove the relevance of a proposed technology platform for the realization of non-classical light sources in the context of fiber-based quantum communication applications.


Author(s):  
И.А. Деребезов ◽  
В.А. Гайслер ◽  
А.В. Гайслер ◽  
Д.В. Дмитриев ◽  
А.И. Торопов ◽  
...  

Hybrid microcavity for single quantum dot based emitters has been developed and realized. The microcavity consists of semiconductor distributed Bragg reflector and microlens, which is selectively positioned over a single (111) In(Ga)As quantum dot. We have demonstrated pure single photon emission with g(2)(0) = 0.07. The fine structure of exciton states of (111) In(Ga)As quantum dots is studied. It is shown that the splitting of exciton states is comparable with the natural width of exciton lines, which is of great interest for the design of emitters of pairs of entangled photons on the basis of these quantum dots.


Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1136
Author(s):  
Shulun Li ◽  
Xiangjun Shang ◽  
Yao Chen ◽  
Xiangbin Su ◽  
Huiming Hao ◽  
...  

Uniform arrays of three shapes (gauss, hat, and peak) of GaAs microlenses (MLs) by wet-etching are demonstrated, ∼200 nm spatial isolation of epitaxial single QDs embedded (λ: 890–990 nm) and broadband (Δλ∼80 nm) enhancement of their quantum light extraction are obtained, which is also suitable for telecom-band epitaxial QDs. Combined with the bottom distributed Bragg reflector, the hat-shaped ML forms a cavity and achieves the best enhancement: extraction efficiency of 26%, Purcell factor of 2 and single-photon count rate of 7×106 counts per second at the first lens; while the gauss-shaped ML shows a broader band (e.g., longer λ) enhancement. In the MLs, single QDs with featured exciton emissions are observed, whose time correlations prove single-photon emission with multi-photon probability g(2)(0)=0.02; some QDs show both biexciton XX and exciton X emissions and exhibit a perfect cascade feature. This work could pave a step towards a scalable array of QD single-photon sources and the application of QD photon-pair emission for entanglement experiments.


Nanophotonics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 3557-3565
Author(s):  
Guorui Zhang ◽  
Ying Gu ◽  
Qihuang Gong ◽  
Jianjun Chen

AbstractDue to small optical mode volumes and linear polarizations of surface-plasmon-polariton (SPP) resonant modes in metallic antennas, it is very difficult to obtain complex emission patterns and polarizations for single-photon emitters. Herein, nonresonant enhancement in a silver nanowire is used to both enhance emission rates and extract a z-oriented dipole, and then the symmetry of metallic nanostructures is proposed to tailor the patterns and polarizations of single-photon emission. The emission pattern of a quantum dot located close to a metallic nanostructure with a symmetric axis is split into multiple flaps. The number of splitting flaps is equal to the order of the symmetric axis. Moreover, the electric vectors of the emitted photons become centrally symmetric about the symmetric axis. The above phenomena are well explained by both a simulation and an image dipole model. The structural-symmetry-tailoring mechanism may open up a new avenue in the design of multifunctional and novel quantum-plasmonic devices.


2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Jose J. Fonseca ◽  
Andrew L. Yeats ◽  
Brandon Blue ◽  
Maxim K. Zalalutdinov ◽  
Todd Brintlinger ◽  
...  

AbstractHere we report how two-dimensional crystal (2DC) overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in a reverse epitaxial process where initially nanocrystalline Au films gain texture, crystallographically orient with the 2D crystal overlayer, and form an oriented porous metallic network (OPEN) structure in which the 2DC can suspend above or coat the inside of the metal pores. Both laser excitation and exciton recombination in the 2DC semiconductor launch propagating SPPs in the OPEN film. Energy in-/out- coupling occurs at metal pore sites, alleviating the need for dielectric spacers between the metal and 2DC layer. At low temperatures, single-photon emitters (SPEs) are present across an OPEN-WSe2 film, and we demonstrate remote SPP-mediated excitation of SPEs at a distance of 17 μm.


2018 ◽  
Vol 9 ◽  
pp. 1085-1094 ◽  
Author(s):  
Kelvin Chung ◽  
Yu H Leung ◽  
Chap H To ◽  
Aleksandra B Djurišić ◽  
Snjezana Tomljenovic-Hanic

Fluorescence properties of crystallographic point defects within different morphologies of titanium dioxide were investigated. For the first time, room-temperature single-photon emission in titanium dioxide optical defects was discovered in thin films and commercial nanoparticles. Three-level defects were identified because the g (2) correlation data featured prominent shoulders around the antibunching dip. Stable and blinking photodynamics were observed for the single-photon emitters. These results reveal a new room-temperature single-photon source within a wide bandgap semiconductor.


Nanoscale ◽  
2018 ◽  
Vol 10 (17) ◽  
pp. 7957-7965 ◽  
Author(s):  
Zai-Quan Xu ◽  
Christopher Elbadawi ◽  
Toan Trong Tran ◽  
Mehran Kianinia ◽  
Xiuling Li ◽  
...  

Ar plasma etching and annealing are highly robust in generating oxygen related single photon emitters in hBN.


2020 ◽  
Vol 10 ◽  
pp. 184798042094934
Author(s):  
Michele Re Fiorentin ◽  
Kiptiemoi Korir Kiprono ◽  
Francesca Risplendi

Single-photon emitters in hexagonal boron nitride have attracted great attention over the last few years due to their excellent optoelectronical properties. Despite the vast range of results reported in the literature, studies on substitutional impurities belonging to the 13th and 15th groups have not been reported yet. Here, through theoretical modeling, we provide direct evidence that hexagonal boron nitride can be opportunely modified by introducing impurity atoms such as aluminum or phosphorus that may work as color centers for single-photon emission. By means of density functional theory, we focus on determining the structural stability, induced strain, and charge states of such defects and discuss their electronic properties. Nitrogen substitutions with heteroatoms of group 15 are shown to provide attractive features (e.g. deep defect levels and localized defect states) for single-photon emission. These results may open up new possibilities for employing innovative quantum emitters based on hexagonal boron nitride for emerging applications in nanophotonics and nanoscale sensing devices.


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