scholarly journals Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 610 ◽  
Author(s):  
Yifei Huang ◽  
Ying Wang ◽  
Xiaofei Kuang ◽  
Wenju Wang ◽  
Jianxiang Tang ◽  
...  
Keyword(s):  
Electric Field ◽  
Numerical Simulations ◽  
Breakdown Voltage ◽  
Surface Charges ◽  
Field Plate ◽  
Edge Termination ◽  
Plate Technique

In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical simulations. Step-DZ-JTE greatly reduces the sensitivity of breakdown voltage (BV) and surface charges (SC). For a 30-μm thick epi-layer, the optimized Step-DZ-JTE shows 90% of the theoretical BV with a wide tolerance of 12.2 × 1012 cm−2 to the JTE dose and 85% of the theoretical BV with an improved tolerance of 3.7 × 1012 cm−2 to the positive SC are obtained. Furthermore, when combined with the field plate technique, the performance of the Step-DZ-JTE is further improved.

A Study of Oxide Etch Angle of Edge Termination Field Plate for Fabrication of SiC SBD

2017 ◽  
Vol 730 ◽  
pp. 102-105
Author(s):  
Ey Goo Kang
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Breakdown Voltage ◽  
Dielectric Breakdown ◽  
Power Semiconductor ◽  
Field Plate ◽  
Edge Termination ◽  
Power Semiconductor Devices ◽  
Silicon Materials ◽  
Generation Power

The silicon carbide (SiC) material is being spotlighted as a next-generation power semiconductor material due to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in the conventional power semiconductor devices. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. The experiment results indicated that oxide etch angle was 45° when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681V was obtained.

scholarly journals Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

Electronics ◽  
2019 ◽  
Vol 8 (4) ◽  
pp. 406 ◽  
Author(s):  
Biyan Liao ◽  
Quanbin Zhou ◽  
Jian Qin ◽  
Hong Wang
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Structural Parameters ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Insulator Layer ◽  
Field Plate ◽  
2D Simulation ◽  
Gan Hemts ◽  
Drain Field

A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of geometrical variables of FP and insulator layer on electric field distribution and VBD are investigated systematically. The FPs can modulate the potential lines and distribution of an electric field, and the insulator layer would influence the modulation effect of FPs. In addition, we designed a structure of HEMT which simultaneously contains gate FP, source FP and drain FP. It is found that the VBD of AlGaN/GaN HEMTs can be improved greatly with the corporation of gate FP, source FP and drain FP. We achieved the highest VBD in the HEMT contained with three FPs by optimizing the structural parameters including length of FPs, thickness of FPs, and insulator layer. For HEMT with three FPs, FP-S alleviates the concentration of the electric field more effectively. When the length of the source FP is 24 μm and the insulator thickness between the FP-S and the AlGaN surface is 1950 nm, corresponding to the average electric field of about 3 MV/cm at the channel, VBD reaches 2200 V. More importantly, the 2D simulation model is based on a real HMET device and will provide guidance for the design of a practical device.

4.5kV SiC JBS Diodes

2013 ◽  
Vol 347-350 ◽  
pp. 1506-1509 ◽  
Author(s):  
Yong Hong Tao ◽  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Yun Li
Keyword(s):  
Numerical Simulations ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Current Density ◽  
Doping Level ◽  
Doping Concentration ◽  
Device Structure ◽  
Reverse Voltage ◽  
Edge Termination ◽  
Drift Layer

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V.

Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode

2014 ◽  
Vol 778-780 ◽  
pp. 800-803 ◽  
Author(s):  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Rui Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Numerical Simulations ◽  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Level ◽  
Electrical Characteristics ◽  
Edge Termination ◽  
Fabrication And Characterization ◽  
Drift Layer

4H-SiC JBS diode with breakdown voltage higher than 4.5 kV, has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper we report the design, the fabrication, and the electrical characteristics of 4H-SiC JBS diode. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The epilayer properties of the N-type are 55 μm with a doping of 9×1014cm−3. The diodes were fabricated with a floating guard rings edge termination. The on-state voltage was 4V at JF=80 A/cm2

Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO2 and Sputter Deposited AlN Dielectric Stack

2008 ◽  
Vol 600-603 ◽  
pp. 987-990 ◽  
Author(s):  
A. Kumta ◽  
E. Rusli ◽  
J.H. Xia
Keyword(s):  
Dielectric Constant ◽  
Electric Field ◽  
Silicon Dioxide ◽  
Breakdown Voltage ◽  
Field Enhancement ◽  
Low Dielectric Constant ◽  
Field Plate ◽  
Low Dielectric ◽  
High K ◽  
Sputter Deposited

Silicon dioxide (SiO2), one of the commonly used dielectrics for field plate terminated 4H-SiC devices suffers from high electric field and premature breakdown due to its low dielectric constant (k). This problem can be addressed by using high-k dielectrics such as AlN that will reduce the field and improve the breakdown voltage (VB). Sputter deposited amorphous AlN films with a thickness (tAl) ranging from 0.05 μm to 1.3 μm have been deposited on 4H-SiC n-type samples with a 10 μm thick epilayer doped with nitrogen to a concentration of 1.7–3.5×1015/cm3 . The VB of the diodes was found to improve to as much as 1500 V at tAl = 0.8 μm, which is more than 2 times the VB of unterminated structures which have a premature breakdown between 600-700 V due to field enhancement at the diode periphery.

The Effect of Oxide Fixed Charge on the Breakdown Characteristics of SiC Lateral Super Junction Devices

2011 ◽  
Vol 121-126 ◽  
pp. 1585-1589 ◽  
Author(s):  
Hu Jun Jia ◽  
Guo Dan Zhou ◽  
Yin Tang Yang ◽  
Bao Xing Duan
Keyword(s):  
Electric Field ◽  
Oxide Layer ◽  
Breakdown Voltage ◽  
Charge Compensation ◽  
Fixed Charge ◽  
Negative Effects ◽  
Field Plate ◽  
Negative Effect ◽  
Simulation Results ◽  
A Charge

In this paper, the positive and negative effects of oxide fixed charge on the breakdown characteristic of lateral SiC super junction devices are studied. Simulation results show that in the super junction devices with oxide layer, the negative (or positive) fixed charge on the SiO2/SiC interface act as a like p-pillar (or n-pillar) and enhance the depletion of n-pillar (or p-pillar), which result in a charge compensation and improvement of the breakdown characteristics of the devices. At the same time, a phenomenon of electric field crowding can be caused by the fixed charge and result in a decreasing of the breakdown voltage, this negative effect can be suppressed sufficiently by a field plate.

Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications

2014 ◽  
Vol 778-780 ◽  
pp. 795-799 ◽  
Author(s):  
Holger Bartolf ◽  
Vinoth Kumar Sundaramoorthy ◽  
Andrei Mihaila ◽  
Maxime Berthou ◽  
Philippe Godignon ◽  
...  
Keyword(s):  
Electric Field ◽  
Numerical Simulations ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
High Electric Field ◽  
Avalanche Breakdown ◽  
Edge Termination ◽  
Static Performance ◽  
Interfacial Charge

The static performance of different active and termination area designs for SiC-based Schottky diodes, suitable for 3.3kV applications, were investigated by means of extensive numerical simulations. We found quantitatively that the high electric field of SiC close to avalanche-breakdown is shielded most effectively from the Schottky interface by a trench-based design. Moreover, we conclude that the edge termination design with junction termination extension and four implantedp+guard rings is most robust against oxide interfacial charge.

scholarly journals Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1318
Author(s):  
Xiaoyu Xia ◽  
Zhiyou Guo ◽  
Huiqing Sun
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Charge Balance ◽  
Field Plate ◽  
New Type ◽  
Drain Field ◽  
Output Characteristics ◽  
Silvaco Atlas

In this article, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. By studying a new charge balance method provided by HEMTs and micro-FPs, the physical mechanism of FP adjusting the HEMT potential distribution and channel electric field distribution is analyzed. The new FP structure consists of a drain field plate (D-FP), a source field plate (S-FP) and several micro-gate field plates (G-FP) to improve the output characteristics of HEMTs. By adjusting the distribution of potential and channel electric field, a wider and more uniform channel electric field can be obtained, and the breakdown voltage can be increased to 1278 V. Although the on-resistance of the HEMT is slightly increased to 5.24 Ωmm, it is still lower than other reference values. These results may open up a new and effective method for manufacturing high-power devices for power electronics applications.

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