scholarly journals Editorial for Special Issue on Flexible Electronics: Fabrication and Ubiquitous Integration

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 605 ◽  
Author(s):  
Ramses Martinez
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Special Issue

Based on the premise “anything thin is flexible”, the field of flexible electronics has been fueled from the ever-evolving advances in thin-film materials and devices. [...]

scholarly journals Call for papers on special issue “Thin-film materials, devices and carrier dynamics for flexible electronics”

2020 ◽  
Vol 2 (2) ◽  
pp. 062-062
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Transient Absorption ◽  
Rapid Development ◽  
Material Design ◽  
Carrier Dynamics ◽  
Advanced Materials ◽  
Structure Property ◽  
Special Issue ◽  
Time Resolved

Flexible electronics have attracted great attention due to their salient features and significant roles in the fields of energy, information, sensing, displays, smart skins, wearable systems, biomedical diagnostics, and artificial intelligence, etc. The past years have witnessed the rapid development of advanced materials and devices for flexible electronics. This special issue aims to collect high quality articles focused on thin-film materials, devices and carrier dynamics in flexible electronics and optoelectronics. It is desirable to search a variety of functional films including metallic, organic, inorganic, hybrid and composite materials for developing different types of flexible transistors, sensors, actuators, photodetectors, photovoltaic devices, light-emitting devices and beyond. It may contain, but not limited to material design, thin-film processing, structure regulation, property optimization, structure-property relationship, device engineering, and potential applications. Meanwhile, fundamental investigations on surface and interface characteristics, energy level alignments, charge and energy transfer processes, device operation mechanisms, and carrier dynamics related with advanced techniques such as ultrafast transient absorption and time-resolved (TR) spectroscopy, are welcome for understanding the thin-film materials and flexible devices. I kindly invite you to submit a manuscript(s) for this Special Issue. Full papers, communications, and reviews are all welcome.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

A Sustainable Approach to Flexible Electronics with Zinc-Tin Oxide Thin-Film Transistors

2018 ◽  
Vol 4 (7) ◽  
pp. 1800032 ◽  
Author(s):  
Cristina Fernandes ◽  
Ana Santa ◽  
Ângelo Santos ◽  
Pydi Bahubalindruni ◽  
Jonas Deuermeier ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide
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