scholarly journals Flexible Electronics: Mechanical Strain-Tunable Microwave Magnetism in Flexible CuFe2 O4 Epitaxial Thin Film for Wearable Sensors (Adv. Funct. Mater. 10/2018)

2018 ◽  
Vol 28 (10) ◽  
pp. 1870063
Author(s):  
Wenlong Liu ◽  
Ming Liu ◽  
Rong Ma ◽  
Ruyi Zhang ◽  
Wenqing Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Wearable Sensors ◽  
Mechanical Strain ◽  
Epitaxial Thin Film ◽  
Tunable Microwave

Mechanical Strain-Tunable Microwave Magnetism in Flexible CuFe2O4Epitaxial Thin Film for Wearable Sensors

2018 ◽  
Vol 28 (10) ◽  
pp. 1705928 ◽  
Author(s):  
Wenlong Liu ◽  
Ming Liu ◽  
Rong Ma ◽  
Ruyi Zhang ◽  
Wenqing Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Wearable Sensors ◽  
Mechanical Strain ◽  
Tunable Microwave

Enhanced dielectric properties of SrTiO3 epitaxial thin film for tunable microwave devices

2002 ◽  
Vol 80 (1) ◽  
pp. 109-111 ◽  
Author(s):  
K. Bouzehouane ◽  
P. Woodall ◽  
B. Marcilhac ◽  
A. N. Khodan ◽  
D. Crété ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Microwave Devices ◽  
Epitaxial Thin Film ◽  
Tunable Microwave

Epitaxial Thin-Film Spinel Oxides as Oxygen Reduction Electrocatalysts in Alkaline Media

2021 ◽  
Author(s):  
Yao Yang ◽  
Rui Zeng ◽  
Hanjong Paik ◽  
Ding-Yuan Kuo ◽  
Darrell G. Schlom ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Reduction ◽  
Alkaline Media ◽  
Epitaxial Thin Film ◽  
Spinel Oxides

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Effects of Bi:V ratio and oxygen pressure on BiVO4(010) epitaxial thin film preparation

2021 ◽  
pp. 413174
Author(s):  
Yuxin Shi ◽  
Pengwei Zhai ◽  
Lixiang Meng ◽  
Zongyin Huang ◽  
Guoqiang Li
Keyword(s):  
Thin Film ◽  
Oxygen Pressure ◽  
Epitaxial Thin Film ◽  
Thin Film Preparation ◽  
Film Preparation

scholarly journals Epitaxial thin-film Pd1-xFex alloy: a tunable ferromagnet for superconducting spintronics

2020 ◽  
Author(s):  
Alireza Esmaeili ◽  
Igor V. Yanilkin ◽  
Amir I. Gumarov ◽  
Iskander R. Vakhitov ◽  
Bulat F. Gabbasov ◽  
...  
Keyword(s):  
Thin Film ◽  
Epitaxial Thin Film
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