scholarly journals Fabrication and Characterization of PZT Fibered-Epitaxial Thin Film on Si for Piezoelectric Micromachined Ultrasound Transducer

Micromachines ◽  
2018 ◽  
Vol 9 (9) ◽  
pp. 455 ◽  
Author(s):  
Pham Ngoc Thao ◽  
Shinya Yoshida ◽  
Shuji Tanaka
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Signal To Noise Ratio ◽  
Lead Zirconate ◽  
Ultrasound Transducer ◽  
High Signal ◽  
Epitaxial Thin Film ◽  
Epitaxial Relationship ◽  
Polycrystalline Thin Films

This paper presents a fibered-epitaxial lead zirconate titanate (PZT) thin film with intermediate features between the monocrystalline and polycrystalline thin films for piezoelectric micromachined ultrasound transducer (pMUT). The grain boundaries confirmed by scanning electron microscopy, but it still maintained the in-plane epitaxial relationship found by X-ray diffraction analyses. The dielectric constant (εr33 = 500) was relatively high compared to those of the monocrystalline thin films, but was lower than those of conventional polycrystalline thin films near the morphotropic phase boundary composition. The fundamental characterizations were evaluated through the operation tests of the prototyped pMUT with the fibered-epitaxial thin film. As a result, its piezoelectric coefficient without poling treatment was estimated to be e31,f = −10–−11 C/m2, and thus reasonably high compared to polycrystalline thin films. An appropriate poling treatment increased e31,f and decreased εr33. In addition, this unique film was demonstrated to be mechanically tougher than the monocrystalline thin film. It has the potential ability to become a well-balanced piezoelectric film with both high signal-to-noise ratio and mechanical toughness for pMUT.

Effect of La Dopant on Electrical Properties of Pb(Zr,Ti)O3 Thin Film Capacitors

1999 ◽  
Vol 596 ◽  
Author(s):  
Chang Jung Kim ◽  
Ilsub Chung
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Random Access ◽  
Lead Zirconate ◽  
Second Phase ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Thin Film Capacitors

AbstractLanthanum doped lead zirconate titanate (PZT) thin films have been prepared on Pt/IrO2/Ir/SiO2/Si substrates to improve the ferroelectric and retention properties. The microstructure and electrical properties of the PZT capacitors were evaluated as a function of La content. The crystalline orientation was appreciably influenced by the addition of La in PZT thin films. The microstructures of films containing 0 and 0.5 mol% La were single phase perovskite, but for La = 1 mol%, a second phase was detected by SEM observation. The 0.5 mol% La doped PZT thin film capacitor showed the best ferroelectric and retention properties for ferroelectric random access memory compared to non-doped PZT.

Improving PZT Thin Film Texture Through Pt Metallization and Seed Layers

2011 ◽  
Vol 1299 ◽  
Author(s):  
L.M. Sanchez ◽  
D.M. Potrepka ◽  
G.R. Fox ◽  
I. Takeuchi ◽  
R.G. Polcawich
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Seed Layer ◽  
Film Growth ◽  
Past Research ◽  
Lead Zirconate ◽  
Research Activities ◽  
Pzt Thin Film ◽  
Seed Layers

ABSTRACTLeveraging past research activities in orientation control of lead zirconate titanate (PZT) thin films [1,2], this work attempts to optimize those research results using the fabrication equipment at the U.S. Army Research Laboratory so as to achieve a high degree of {001}- texture and improved piezoelectric properties. Initial experiments examined the influence of Ti/Pt and TiO2/Pt thins films used as the base-electrode for chemical solution deposition PZT thin film growth. In all cases, the starting silicon substrates used a 500 nm thermally grown silicon dioxide. The Pt films were sputter deposited onto highly textured titanium dioxide films grown by a thermal oxidation process of a sputtered Ti film [3]. The second objective targeted was to achieve highly {001}-textured PZT using a seed layer of PbTiO3 (PT). A comparative study was performed between Ti/Pt and TiO2/Pt bottom electrodes. The results indicate that the use of a highly oriented TiO2 led to highly {111}-textured Pt, which in turn improved both the PT and PZT orientations. Both PZT (52/48) and (45/55) thin films with and without PT seed layers were deposited and examined via x-ray diffraction methods (XRD) as a function of annealing temperature. As expected, the PT seed layer provides significant improvement in the PZT {001}-texture while suppressing the {111}-texture of the PZT. Improvements in the Lotgering factor (f) were observed upon comparison of the original Ti/Pt/PZT process (f=0.66) with samples using the PT seed layer as a template, Ti/Pt/PT/PZT (f=0.87), and with films deposited onto the improved Pt electrodes, TiO2/Pt/PT/PZT (f=0.96).

Oxygen transport during annealing of Pb(Zr,Ti)O3 thin films in O2 gas and its effect on their conductivity

2001 ◽  
Vol 16 (10) ◽  
pp. 3005-3008 ◽  
Author(s):  
F. Ayguavives ◽  
B. Agius ◽  
B. EaKim ◽  
I. Vickridge
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Low Leakage ◽  
Pzt Film ◽  
Low Leakage Current ◽  
Pzt Thin Film ◽  
Current Densities

Lead zirconate titanate (PZT) thin films were deposited in a reactive argon/oxygen gas mixture by radio-frequency-magnetron sputtering. The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using oxygen 18 as a tracer, to study the oxygen diffusion in the thin films. Electrical properties and crystallization were optimized with a 90-nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550 °C) show very low leakage current densities (J = 2 × 10−8 A/cm2 at 1 V). In this article we show that a strong correlation exists between the oxygen composition in the PZT film and the leakage current density.

Synthesis and Properties of Lead Zirconate Titanate Thin Films Via Metalorganic Chemical Vapor Deposition

2002 ◽  
Vol 17 (6) ◽  
pp. 1536-1542 ◽  
Author(s):  
Chih-Yi Pan ◽  
Yin-Lang Chen ◽  
Dah-Shyang Tsai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Temperature Dependence ◽  
Lead Zirconate Titanate ◽  
Surface Reaction ◽  
Lead Zirconate ◽  
Strong Temperature Dependence ◽  
Phase Reaction ◽  
Zirconate Titanate

Ferroelectric PZT thin films were deposited on Pt and SrRuO3 substrates in a cold-wall reactor, using the Pb(C2H5)4/Zr(OBu)4/Ti(OPri)4/O2 reaction system. In comparison with Pt substrate, the growth rate of lead zirconate titanate (PZT) thin film was higher on SrRuO3. Lead content of the thin film deposited on either substrate at low temperatures (723–863 K) was much more temperature dependent than the other two metal contents. The strong temperature dependence originated from the high activation energy in the initial decomposition of Pb(C2H5)4 vapor, which was 54 kcal/mol. The surface reaction constant of lead precursor had much lower temperature dependence. The activation energy of surface reaction for PbO, estimated from deposition in a mini-chamber, was 6 kcal/mol on Pt and 9 kcal/mol on the SrRuO3 substrate. Therefore, the incorporation path of component oxide PbO, whose apparent activation energy was 31 kcal/mol on Pt and 29 kcal/mol on SrRuO3, essentially involved considerable gas-phase reaction. The PZT (50/50) thin film on SrRuO3 bottom electrode possessed a lower coercive field and a smaller remnant polarization than that on Pt. The PZT capacitor on SrRuO3 was also less vulnerable to polarization fatigue.

Preparation of Lead Zirconate Titanate Thin Film Using Magnetron Sputtering

2012 ◽  
Vol 538-541 ◽  
pp. 162-165
Author(s):  
Li Yang Yu ◽  
Yang Wang ◽  
Guo Hua Yao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Lead Zirconate Titanate ◽  
Energy Dispersive Spectrometer ◽  
Lead Zirconate ◽  
Gas Content ◽  
Crystalline Quality ◽  
Oxide Content ◽  
Zirconate Titanate

PZT(lead zirconate titanate) piezoelectric thin films were deposited on the glass substrates by RF (radio frequency) magnetron sputtering reaction method. The XRD(X-ray diffraction) analysis is used to characterize the structure of thin film, the pattern of EDS(energy dispersive spectrometer) shows the composition of thin film, and SEM(Scanning Electron Microscopy) is used to study the morphologies of thin films. The influence of different sputter gas content on the crystalline quality and the surface morphology are also investigated. The results demonstrate that volatile of lead oxide is closed to the ratio with the oxide content. The roughness of the thin film is influenced by the crystalline quality.

scholarly journals Feasibility Study of Steel Bar Corrosion Monitoring Using a Piezoceramic Transducer Enabled Time Reversal Method

2018 ◽  
Vol 8 (11) ◽  
pp. 2304 ◽  
Author(s):  
Linsheng Huo ◽  
Chuanbo Li ◽  
Tianyong Jiang ◽  
Hong-Nan Li
Keyword(s):  
Lead Zirconate Titanate ◽  
Time Reversal ◽  
Signal To Noise Ratio ◽  
Lead Zirconate ◽  
Stress Waves ◽  
Stress Wave Propagation ◽  
High Signal ◽  
Corrosion Monitoring ◽  
Steel Bar ◽  
Steel Bars

Steel bars, which are commonly used as reinforcements in concrete structures, are slender rods and are good conduits for stress wave propagation. In this paper, a lead zirconate titanate (PZT)-based steel bar corrosion monitoring approach was proposed. Two PZT transducers are surface-bonded on the two ends of a steel rod, respectively. One works as actuator to generate stress waves, and the other functions as a sensor to detect the propagated stress waves. Time reverse technology was applied in this research to monitor the corrosion of the steel bars with a high signal to noise ratio (SNR). Accelerated corrosion experiments of steel bars were conducted. The anti-corrosion performance of the protected piezoceramic transducers was tested first, and then they were used to monitor the corrosion of the steel bar using the time reversal method. The degree of corrosion in the steel bar was determined by the ratio of mass loss during the experiment. The experimental results show that the peak values of the signal that were obtained by time reversal operation are linearly related to the degree of corrosion of the steel bar, which demonstrates the feasibility of the proposed approach for monitoring the corrosion of steel bars using the time reversal method enabled by piezoceramic transducers.

Measurements of Piezoelectric Coefficient d33 of Lead Zirconate Titanate Thin Films Using a Mini Force Hammer

2013 ◽  
Vol 135 (1) ◽  
Author(s):  
Qing Guo ◽  
G. Z. Cao ◽  
I. Y. Shen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Lead Zirconate ◽  
New Method ◽  
Impulsive Force ◽  
Pzt Thin Films ◽  
Zirconate Titanate ◽  
Pzt Thin Film

Lead zirconate titanate (PbZrxTi1-xO3, or PZT) is a piezoelectric material widely used as sensors and actuators. For microactuators, PZT often appears in the form of thin films to maintain proper aspect ratios. One major challenge encountered is accurate measurement of piezoelectric coefficients of PZT thin films. In this paper, we present a simple, low-cost, and effective method to measure piezoelectric coefficient d33 of PZT thin films through use of basic principles in mechanics of vibration. A small impact hammer with a tiny tip acts perpendicularly to the PZT thin-film surface to generate an impulsive force. In the meantime, a load cell at the hammer tip measures the impulsive force and a charge amplifier measures the responding charge of the PZT thin film. Then the piezoelectric coefficient d33 is obtained from the measured force and charge based on piezoelectricity and a finite element modeling. We also conduct a thorough parametric study to understand the sensitivity of this method on various parameters, such as substrate material, boundary conditions, specimen size, specimen thickness, thickness ratio, and PZT thin-film material. Two rounds of experiments are conducted to demonstrate the feasibility and accuracy of this new method. The first experiment is to measure d33 of a PZT disk resonator whose d33 is known. Experimental results show that d33 measured via this method is as accurate as that from the manufacturer's specifications within its tolerance. The second experiment is to measure d33 of PZT thin films deposited on silicon substrates. With the measured d33, we predict the displacement of PZT thin-film membrane microactuators. In the meantime, the actuator displacement is measured via a laser Doppler vibrometer. The predicted and measured displacements agree very well validating the accuracy of this new method.

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

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