scholarly journals Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 445
Author(s):  
Kalparupa Mukherjee ◽  
Carlo De Santi ◽  
Matteo Buffolo ◽  
Matteo Borga ◽  
Shuzhen You ◽  
...  
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Temperature Dependent ◽  
Trade Off ◽  
The Road ◽  
Current Voltage ◽  
Gan On Si ◽  
The Impact ◽  
Tcad Simulations

This work investigates p+n−n GaN-on-Si vertical structures, through dedicated measurements and TCAD simulations, with the ultimate goal of identifying possible strategies for leakage and breakdown optimization. First, the dominant leakage processes were identified through temperature-dependent current–voltage characterization. Second, the breakdown voltage of the diodes was modelled through TCAD simulations based on the incomplete ionization of Mg in the p+ GaN layer. Finally, the developed simulation model was utilized to estimate the impact of varying the p-doping concentration on the design of breakdown voltage; while high p-doped structures are limited by the critical electric field at the interface, low p-doping designs need to contend with possible depletion of the entire p-GaN region and the consequent punch-through. A trade-off on the value of p-doping therefore exists to optimize the breakdown.

The Impact of Schottky Barrier Tunneling on SiC-JBS Performance

2009 ◽  
Vol 615-617 ◽  
pp. 667-670 ◽  
Author(s):  
Gary M. Dolny ◽  
Richard L. Woodin ◽  
T. Witt ◽  
J. Shovlin
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Voltage Drop ◽  
Forward Voltage ◽  
Trade Off ◽  
Practical Applications ◽  
Forward Voltage Drop ◽  
Surface Electric Field ◽  
The Impact ◽  
Barrier Tunneling

The impact of barrier tunneling on SiC-JBS performance is studied both experimentally and theoretically. We show that although the pinch-off effects associated with the JBS structure can significantly suppress the surface electric field, barrier tunneling still dominates the reverse behavior. Barrier tunneling determines the apparent breakdown voltage, as well as the apparent breakdown voltage vs. forward voltage drop trade-off of the JBS diode in practical applications.

Temperature Dependent Current-Voltage Characteristics in Thin SiO2 Films

1989 ◽  
Vol 159 ◽  
Author(s):  
Jin Zhao ◽  
N. M. Ravindra
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Temperature Dependent ◽  
Sio2 Films ◽  
Breakdown Electric Field ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Nordheim Tunneling

ABSTRACTAn analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics, of very thin films of SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed.

Modeling of a Breakdown Voltage in GaN Rectifiers and SiC Rectifiers

2001 ◽  
Vol 680 ◽  
Author(s):  
You-Sang Lee ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Impact Ionization ◽  
Accurate Approximation ◽  
Ionization Coefficient ◽  
Zinc Blende ◽  
The Impact

ABSTRACTThe breakdown voltage of wurtzite and zinc-blende GaN rectifiers as function of a doping concentration and the width of epitaxial layer were successfully modeled in the reach-through case. The breakdown voltage was derived by the impact ionization integral employing the effective impact ionization coefficient and an accurate approximation. Our model shows that the breakdown voltage of wurtzite GaN rectifier was larger than those of zinc-blende GaN rectifier and SiC rectifiers including 4H-SiC and 6H-SiC in the condition that both the thickness and doping concentration of epitaxial layer are identical.

The Closed-Form Solutions For The Breakdown Voltages Of 6H-SiC Reachthrough Diodes

1998 ◽  
Vol 512 ◽  
Author(s):  
You-Sang Lee ◽  
D.-S. Byeon ◽  
Y.-I. Choi ◽  
I.-Y. Park ◽  
Min-Koo Han
Keyword(s):  
Closed Form ◽  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Impact Ionization ◽  
Analytic Solutions ◽  
Ionization Coefficient ◽  
Closed Form Solutions ◽  
The Impact ◽  
Effective Ionization

ABSTRACTThe closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD, reachthrough diode, having the structure of p+-n-n+, are successfully derived by solving the impact ionization integral using effective ionization coefficient in the reachthrough condition. In the region of the lowly doped epitaxial layer, the breakdown voltages of 6H-SiC RTD nearly constant with the increased doping concentration. Also the breakdown voltages of 6H-SiC RTD decrease, in the region of the highly doped epitaxial layer, which coincides with Baliga'seq. [1].

scholarly journals Analytical Breakdown Voltage Model for Partial SOI-LDMOS Transistor with Buried Oxide Step Structure

2021 ◽  
Author(s):  
Jagamohan Sahoo ◽  
Rajat Mahapatra
Keyword(s):  
Electric Field ◽  
Analytical Model ◽  
Breakdown Voltage ◽  
Point Of View ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Design Parameters ◽  
Drift Region ◽  
Two Dimensional ◽  
The Impact

Abstract We have developed a simple physics-based two-dimensional analytical Off-state breakdown voltage model of a PBOSS Silicon-On-Insulator Lateral Diffused Metal Oxide Semiconductor (SOI-LDMOS) transistor. The analytical model includes the expressions of surface potential and electric field distributions in the drift region by solving the 2D Poisson’s equation. The electric field at the Si-SiO2 surface is modified by creating additional electric field peaks due to the presence of the PBOSS structure. The uniformly distributed electric field results in improving the breakdown voltage. Further, the breakdown voltage is analytically obtained via critical electric field concept to quantify the breakdown characteristic. The model exploits the impact of the critical device design parameters such as thickness and length of the PBOSS structure, doping, and thickness of the drift region on the surface electric field and the breakdown voltage. The proposed model is verified by the results obtained from ATLAS two dimensional simulations. The analytical model is of the high potential from a physical and mathematical point of view to design high voltage SOI-LDMOS transistors for power switching applications.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

scholarly journals Study and Optimization of a 600V Pseudo-Vertical GaN-on-Silicon Rectifier by Finite Element Simulations

2016 ◽  
Vol 858 ◽  
pp. 1190-1193
Author(s):  
Amira Souguir-Aouani ◽  
Nicolas Thierry-Jebali ◽  
Dominique Tournier ◽  
Arnaud Yvon ◽  
Emmanuel Collard ◽  
...  
Keyword(s):  
Finite Element ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Impact Analysis ◽  
Finite Element Simulations ◽  
Geometrical Parameters ◽  
Guard Ring ◽  
Good Efficiency ◽  
Schottky Rectifier ◽  
The Impact

This work presents the impact analysis of physical and geometrical parameters on the on-resistance and the breakdown voltage in order to optimize a 600 V pseudo-vertical GaN/Si Schottky rectifier. The results by finite element simulations indicate that the most influent parameter on the resistance is the thickness of the n+ layer. Regarding reverse specifications, simulations show that a good efficiency of the “Mesa + Guard Ring” is achieved for a guard ring doping concentration higher than Na=5×1017 cm-3.

scholarly journals Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4740
Author(s):  
Kalparupa Mukherjee ◽  
Carlo De Santi ◽  
Matteo Borga ◽  
Shuzhen You ◽  
Karen Geens ◽  
...  
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Degradation Process ◽  
Gate Insulator ◽  
Reliability Characteristics ◽  
Vehicle Structure ◽  
Gan On Si ◽  
Module Development ◽  
Bilayer Dielectric ◽  
Good Agreement

We propose to use a bilayer insulator (2.5 nm Al2O3 + 35 nm SiO2) as an alternative to a conventional uni-layer Al2O3 (35 nm), for improving the performance and the reliability of GaN-on-Si semi vertical trench MOSFETs. This analysis has been performed on a test vehicle structure for module development, which has a limited OFF-state performance. We demonstrate that devices with the bilayer dielectric present superior reliability characteristics than those with the uni-layer, including: (i) gate leakage two-orders of magnitude lower; (ii) 11 V higher off-state drain breakdown voltage; and (iii) 18 V higher gate-source breakdown voltage. From Weibull slope extractions, the uni-layer shows an extrinsic failure, while the bilayer presents a wear-out mechanism. Extended reliability tests investigate the degradation process, and hot-spots are identified through electroluminescence microscopy. TCAD simulations, in good agreement with measurements, reflect electric field distribution near breakdown for gate and drain stresses, demonstrating a higher electric field during positive gate stress. Furthermore, DC capability of the bilayer and unilayer insulators are found to be comparable for same bias points. Finally, comparison of trapping processes through double pulsed and Vth transient methods confirms that the Vth shifts are similar, despite the additional interface present in the bilayer devices.

Investigation of the Robust Edge Termination Applied to 6.5kV SiC MOSFET

2018 ◽  
Vol 924 ◽  
pp. 778-781
Author(s):  
Kohei Ebihara ◽  
Koutarou Kawahara ◽  
Shiro Hino ◽  
Koji Sadamatsu ◽  
Akemi Nagae ◽  
...  
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Reverse Bias ◽  
Light Emission ◽  
Avalanche Breakdown ◽  
Power Devices ◽  
Trade Off ◽  
Edge Termination ◽  
High Breakdown Voltage

High breakdown voltage and smaller size of edge termination are required in SiC power devices. We simulated reverse bias characteristics of a variety of edge terminations targeting 6.5 kV MOSFET and the FLR showed the best trade-off between the size and the implanted Al dose. Fabricated pn diode TEGs with a FLR demonstrated over 6.5 kV breakdown voltage. We observed the avalanche breakdown visually by light emission and it corresponded to the simulated electric field. These indicate that we can fabricate the desirable FLR for 6.5 kV MOSFET.

ANALISIS PENGARUH PEMBANGUNAN JALAN LAYANG JANTI TERHADAP PERKEMBANGAN TATA RUANG KAWASAN JANTI STUDI KASUS : KAWASAN JANTI, DESA CATURTUNGGAL, KABUPATEN SLEMAN, D. I. YOGYAKARTA

2017 ◽  
Vol 11 (3) ◽  
pp. 255
Author(s):  
Jeky El Boru
Keyword(s):  
Road Network ◽  
Open Space ◽  
Qualitative Description ◽  
Analysis Method ◽  
Open Spaces ◽  
The Road ◽  
Before And After ◽  
Linkage Method ◽  
The Impact ◽  
Parking Place

Abstract: This research aims to analyze the impact of Janti Flyover Construction toward the growth of layout at Janti Urban Area, including structured space, open space, and linkage. Method used for data collecting are observation, air photograph monitoring, and interview, whereas the analysis method is qualitative description, which is the superimposed method of two layers, that are the layout condition before and after flyover construction. The result shows that the impact of Janti Flyover construction can be seen on building mass (solid), the increasing number of open spaces, including the road network, parking place, and park, whereas the relation between spaces, visually and structurally, can be seen on the growth of buildings which have new shapes and styles, therefore the performance of the overall building does not have a proportional shape. Considering Janti Street at the collective relation, its role is getting stronger as the main frame road network.Keywords: Flyover construction, layout changing, Janti AreaAbstrak: Penelitian ini bertujuan untuk menganalisis pengaruh pembangunan Jalan Layang Janti terhadap perkembangan tata ruang Kawasan Janti, meliputi ruang terbangun, ruang terbuka, serta hubungan antar ruang (“linkage”). Metode pengumpulan data dilakukan melalui observasi, pengamatan foto udara, dan wawancara; sedangkan metode analisis melalui deskripsi secara kualitatif yang berupa “superimposed method” dari dua lapisan kondisi lahan, yakni kondisi tata ruang sebelum dan sesudah pembangunan jalan layang. Hasil penelitian menunjukkan bahwa pengaruh pembangunan Jalan Layang Janti terdapat pada massa bangunan (“solid”), pertambahan ruang terbuka yang berupa jaringan jalan, parkir, dan taman; sedangkan pada hubungan antar ruang ̶ secara visual dan struktural ̶ yakni tumbuhnya bangunan dengan bentuk dan gaya baru, sehingga bentuk tampilan bangunan secara keseluruhan tidak proporsional. Pada hubungan kolektif, Jalan Janti semakin kuat perannya sebagai kerangka utama jaringan jalan.Kata kunci : Pembangunan jalan layang, tata ruang, Kawasan Janti

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