Modeling of a Breakdown Voltage in GaN Rectifiers and SiC Rectifiers

2001 ◽  
Vol 680 ◽  
Author(s):  
You-Sang Lee ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Impact Ionization ◽  
Accurate Approximation ◽  
Ionization Coefficient ◽  
Zinc Blende ◽  
The Impact

ABSTRACTThe breakdown voltage of wurtzite and zinc-blende GaN rectifiers as function of a doping concentration and the width of epitaxial layer were successfully modeled in the reach-through case. The breakdown voltage was derived by the impact ionization integral employing the effective impact ionization coefficient and an accurate approximation. Our model shows that the breakdown voltage of wurtzite GaN rectifier was larger than those of zinc-blende GaN rectifier and SiC rectifiers including 4H-SiC and 6H-SiC in the condition that both the thickness and doping concentration of epitaxial layer are identical.

The Closed-Form Solutions For The Breakdown Voltages Of 6H-SiC Reachthrough Diodes

1998 ◽  
Vol 512 ◽  
Author(s):  
You-Sang Lee ◽  
D.-S. Byeon ◽  
Y.-I. Choi ◽  
I.-Y. Park ◽  
Min-Koo Han
Keyword(s):  
Closed Form ◽  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Impact Ionization ◽  
Analytic Solutions ◽  
Ionization Coefficient ◽  
Closed Form Solutions ◽  
The Impact ◽  
Effective Ionization

ABSTRACTThe closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD, reachthrough diode, having the structure of p+-n-n+, are successfully derived by solving the impact ionization integral using effective ionization coefficient in the reachthrough condition. In the region of the lowly doped epitaxial layer, the breakdown voltages of 6H-SiC RTD nearly constant with the increased doping concentration. Also the breakdown voltages of 6H-SiC RTD decrease, in the region of the highly doped epitaxial layer, which coincides with Baliga'seq. [1].

Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination

2014 ◽  
Vol 778-780 ◽  
pp. 915-918 ◽  
Author(s):  
Keiji Wada ◽  
Kosuke Uchida ◽  
Ren Kimura ◽  
Mitsuhiko Sakai ◽  
Satoshi Hatsukawa ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Concentration ◽  
Doping Control ◽  
Parallel Plane ◽  
Drain Voltage ◽  
Edge Termination ◽  
Switching Characteristics

Blocking characteristics of 2.2 kV and 3.3 kV -class 4H-SiC MOSFETs with various doping conditions for the edge termination region have been investigated. By optimizing the implanted dose into the edge termination structure consisting of junction termination extension (JTE) and field limiting ring (FLR), a breakdown voltage of 3,850 V for 3.3 kV -class MOSFET has been attained. This result corresponds to about 95% of the approximate parallel-plane breakdown voltage estimated from the doping concentration and the thickness of the epitaxial layer. Implanted doping for the JFET region is effective in reducing JFET resistance, resulting in the specific on-resistance of 14.2 mΩcm2 for 3.3 kV SiC MOSFETs. Switching characteristics at the high drain voltage of 2.0 kV are also discussed.

Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

2015 ◽  
Vol 821-823 ◽  
pp. 575-578 ◽  
Author(s):  
Takahiro Makino ◽  
Manato Deki ◽  
Shinobu Onoda ◽  
Norihiro Hoshino ◽  
Hidekazu Tsuchida ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Impact Ionization ◽  
Heavy Ion ◽  
Charge Collection ◽  
Static Electric Field ◽  
The Impact ◽  
Lower Electric Field

The charge induced in SiC-SBDs with different epi-layer thicknesses by ion incidence was measured to understand the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. SiC SBD of which epitaxial-layer thicknesses is close to ion range show larger anomalous charge collection than SBD with thicker epi-layer although the former one has lower electric field than the later one. The gains of collected charge from the SBDs suggest that the impact ionization under 0.16 - 0.18 MV/cm of the static electric field in depletion layer is not dominant mechanisms for the anomalous charge collection. It is suggested that the epitaxial-layer thickness and ion-induced transient high electric field are key to understand the anomalous charge collection mechanisms in SBDs.

Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

2016 ◽  
Vol 858 ◽  
pp. 753-756
Author(s):  
Takahiro Makino ◽  
Shinobu Onoda ◽  
Norihiro Hoshino ◽  
Hidekazu Tsuchida ◽  
Takeshi Ohshima
Keyword(s):  
Schottky Barrier ◽  
Epitaxial Layer ◽  
Impact Ionization ◽  
Ion Irradiation ◽  
Single Species ◽  
Heavy Ion ◽  
Charge Collection ◽  
Lead Ion ◽  
Induced Charge ◽  
The Impact

The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended on the thickness of epitaxial-layer in the SBDs. The simulation result suggests that the impact ionization is one of the key effects to lead ion induced charge enhancement.

scholarly journals New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1497
Author(s):  
Mohamed Fauzi Packeer Mohamed ◽  
Mohamad Faiz Mohamed Omar ◽  
Muhammad Firdaus Akbar Jalaludin Khan ◽  
Nor Azlin Ghazali ◽  
Mohd Hendra Hairi ◽  
...  
Keyword(s):  
Band Gap ◽  
Breakdown Voltage ◽  
Impact Ionization ◽  
High Mobility ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Gate Length ◽  
High Electron ◽  
Gate Leakage ◽  
The Impact

Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-frequency devices, which operate at room temperature. The major drawbacks of conventional pHEMT devices are the very low breakdown voltage (<2 V) and the very high gate leakage current (∼1 mA/mm), which degrade device and performance especially in monolithic microwave integrated circuits low-noise amplifiers (MMIC LNAs). These drawbacks are caused by the impact ionization in the low band gap, i.e., the InxGa(1−x)As (x = 0.53 or 0.7) channel material plus the contribution of other parts of the epitaxial structure. The capability to achieve higher frequency operation is also hindered in conventional InGaAs/InAlAs/InP pHEMTs, due to the standard 1 μm flat gate length technology used. A key challenge in solving these issues is the optimization of the InGaAs/InAlAs epilayer structure through band gap engineering. A related challenge is the fabrication of submicron gate length devices using I-line optical lithography, which is more cost-effective, compared to the use of e-Beam lithography. The main goal for this research involves a radical departure from the conventional InGaAs/InAlAs/InP pHEMT structures by designing new and advanced epilayer structures, which significantly improves the performance of conventional low-noise pHEMT devices and at the same time preserves the radio frequency (RF) characteristics. The optimization of the submicron T-gate length process is performed by introducing a new technique to further scale down the bottom gate opening. The outstanding achievements of the new design approach are 90% less gate current leakage and 70% improvement in breakdown voltage, compared with the conventional design. Furthermore, the submicron T-gate length process also shows an increase of about 58% and 33% in fT and fmax, respectively, compared to the conventional 1 μm gate length process. Consequently, the remarkable performance of this new design structure, together with a submicron gate length facilitatesthe implementation of excellent low-noise applications.

Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing

2006 ◽  
Vol 527-529 ◽  
pp. 1367-1370
Author(s):  
Lin Zhu ◽  
Peter A. Losee ◽  
T. Paul Chow ◽  
Kenneth A. Jones ◽  
Charles Scozzie ◽  
...  
Keyword(s):  
High Temperature ◽  
Breakdown Voltage ◽  
Room Temperature ◽  
Impact Ionization ◽  
Surface Damage ◽  
Ionization Rate ◽  
Ionization Coefficient ◽  
Temperature Activation ◽  
Impact Ionization Rate ◽  
Drift Layer

4H-SiC PiN rectifiers with implanted anode and single-zone JTE were fabricated using AlN capped anneal. The surface damage during the high temperature activation anneal is significantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at 100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage at room temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achieve near ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted and compared with previously reported results.

Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN

2003 ◽  
Vol 94 (1) ◽  
pp. 423-430 ◽  
Author(s):  
Louis Tirino ◽  
Michael Weber ◽  
Kevin F. Brennan ◽  
Enrico Bellotti ◽  
Michele Goano
Keyword(s):  
Temperature Dependence ◽  
Impact Ionization ◽  
Zinc Blende ◽  
Ionization Coefficients ◽  
The Impact

The Temperature Dependent Breakdown Voltage For 4H- and 6H-SiC Diodes

2000 ◽  
Vol 622 ◽  
Author(s):  
Y. S. Lee ◽  
M. K. Han ◽  
Y. I. Choi
Keyword(s):  
High Temperature ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Ionization Coefficient ◽  
Temperature Dependent ◽  
Increasing Temperature ◽  
Temperature Applications

ABSTRACTThe breakdown voltages of 6H- and 4H-SiC rectifiers as function of temperature were modeled analytically in both non-reachthrough diode and reachthrough diode. The breakdown voltage was derived by the ionization integral employing accurate hole impact ionization coefficient. The breakdown voltage of SiC rectifiers was increased with increasing temperature and the positive temperature coefficient of breakdown voltage indicates that SiC rectifiers are suitable for high temperature applications. The breakdown voltages of both 6H- and 4H-SiC diodes were increased by M(T)-1/4 in NRDs and M(T)-1/8 in RDs.

scholarly journals Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 445
Author(s):  
Kalparupa Mukherjee ◽  
Carlo De Santi ◽  
Matteo Buffolo ◽  
Matteo Borga ◽  
Shuzhen You ◽  
...  
Keyword(s):  
Electric Field ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Temperature Dependent ◽  
Trade Off ◽  
The Road ◽  
Current Voltage ◽  
Gan On Si ◽  
The Impact ◽  
Tcad Simulations

This work investigates p+n−n GaN-on-Si vertical structures, through dedicated measurements and TCAD simulations, with the ultimate goal of identifying possible strategies for leakage and breakdown optimization. First, the dominant leakage processes were identified through temperature-dependent current–voltage characterization. Second, the breakdown voltage of the diodes was modelled through TCAD simulations based on the incomplete ionization of Mg in the p+ GaN layer. Finally, the developed simulation model was utilized to estimate the impact of varying the p-doping concentration on the design of breakdown voltage; while high p-doped structures are limited by the critical electric field at the interface, low p-doping designs need to contend with possible depletion of the entire p-GaN region and the consequent punch-through. A trade-off on the value of p-doping therefore exists to optimize the breakdown.

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